Method of manufacturing semiconductor devices and semiconductor devices
A semiconductor device includes a gate structure disposed over a channel region, and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function adjustment layer, over the gate dielectric layer, a first shield layer over the first work function adjustment layer, a first barrier layer, and a metal gate electrode layer. The first work function adjustment layer is made up of n-type work function adjustment layer and includes aluminum. The first shield layer is made of at least one selected from the group consisting of metal, metal nitride, metal carbide, silicide, a layer containing one or more of F, Ga, In, Zr, Mn and Sn, and an aluminum containing layer having a lower aluminum concentration than the first work function adjustment layer.
1 . A method of manufacturing a semiconductor device, comprising:
forming a gate dielectric layer over a channel region made of a semiconductor material;
forming a first shield layer over the gate dielectric layer;
forming a first work function adjustment layer over the first shield layer;
forming a second shield layer over the first work function adjustment layer;
forming a metal gate electrode layer over the first shield layer, wherein:
the second shield layer is a surface region of the first work function adjustment layer,
the first work function adjustment layer includes aluminum, and
at least one of the first shield layer or the second shield layer includes one selected from the group consisting of a metal layer, a metal nitride layer comprising TaTiN, WN, WCN or MoN, a metal carbide layer, a silicide layer, and a layer containing Al and one or more of F, N, Ga, In, Zr, Mn and Sn.
2 . The method of claim 1 , wherein the second shield layer contains Al and F.
3 . The method of claim 2 , wherein the second shield layer is formed by treating a surface of the first work function adjustment layer with fluorine containing material.
4 . The method of claim 3 , wherein the fluorine containing material includes HF.
5 . The method of claim 1 , wherein the second shield layer contains Al and N.
6 . The method of claim 5 , wherein the second shield layer is formed by treating a surface of the first work function adjustment layer with a NH 3 gas.
7 . The method of claim 1 , wherein the second shield layer contains one or more of Ga, In, Zr, Mn and Sn.
8 . The method of claim 1 , wherein the second shield layer is formed by implanting ions of one or more of Ga, In, Zr, Mn and Sn to the surface region of the first work function adjustment layer.
9 . A method of manufacturing a semiconductor device, comprising:
forming a gate dielectric layer over a channel region made of a semiconductor material;
forming a first shield layer over the gate dielectric layer;
forming a first work function adjustment layer over the first shield layer;
forming a second shield layer by introducing one or more elements into a surface region of the first work function adjustment layer;
forming a metal gate electrode layer over the first shield layer.
10 . The method of claim 9 , wherein the first work function adjustment layer includes aluminum.
11 . The method of claim 10 , wherein the first shield layer includes a metal layer.
12 . The method of claim 10 , wherein the first shield layer includes a metal nitride layer comprising TaTiN, WN, WCN or MoN.
13 . The method of claim 10 , wherein the first shield layer includes a metal carbide layer.
14 . The method of claim 10 , wherein the first shield layer includes a silicide layer.
15 . The method of claim 10 , wherein the second shield layer includes a layer containing Al and F.
16 . The method of claim 10 , wherein the second shield layer includes a layer containing Al and N.
17 . The method of claim 10 , wherein the second shield layer includes a layer containing Al and one or more of Ga, In, Zr, Mn or Sn.
18 . A method of manufacturing a semiconductor device, comprising:
forming a gate dielectric layer over a channel region made of a semiconductor material;
forming a first shield layer over the gate dielectric layer;
forming a first work function adjustment layer over the first shield layer;
forming a second shield layer by introducing one or more elements into a surface region of the first work function adjustment layer;
forming a metal gate electrode layer over the first shield layer,
wherein the second shield layer includes a layer containing Al and one or more of F, N, Ga, In, Zr, Mn and Sn.
19 . The method of claim 18 , wherein the first shield layer includes one selected from the group consisting of a metal layer, a metal nitride layer comprising TaTiN, WN, WCN or MoN, a metal carbide layer, and a silicide layer.
20 . The method of claim 18 , wherein the one or more elements are introduced by ion implantation.