Semiconductor device, electronic device, and method for manufacturing semiconductor device

1 . A semiconductor device, comprising:

a first substrate that includes:

silicon;

a semiconductor substrate that includes a hole-shaped portion; and

a multilayer wiring layer connected to the semiconductor substrate, wherein

the hole-shaped portion is a through hole that penetrates the multilayer wiring layer from a surface of the semiconductor substrate, and

the multilayer wiring layer includes a logic circuit;

a first film on at least one surface of the hole-shaped portion;

a photosensitive second film that covers at least a part of a side surface of the hole-shaped portion, wherein

the at least one surface of the hole-shaped portion includes the side surface of the hole-shaped portion, and

the first film is between the side surface of the hole-shaped portion and the photosensitive second film; and

a second substrate includes a pixel region, wherein

the pixel region includes pixel units, and

the second substrate is different from the first substrate.

2 . The semiconductor device according to claim 1 , wherein the first film absorbs light having a wavelength sensitive to the photosensitive second film.

3 . The semiconductor device according to claim 2 , wherein the first film has a different thickness depending on a position where the first film is formed.

4 . The semiconductor device according to claim 3 , wherein the first film has different absorption characteristics or reflection characteristics of the light depending on the thickness.

5 . The semiconductor device according to claim 1 , wherein the first film has an adsorption force of one of specific value or more than the specific value with respect to the first substrate and the photosensitive second film.

6 . The semiconductor device according to claim 1 , wherein the first film is a substance that includes at least one of silicon nitride (SiN), silicon oxynitride (SiOxNy), or titanium nitride (TiN).

7 . The semiconductor device according to claim 1 , wherein the photosensitive second film is an insulating film.

8 . The semiconductor device according to claim 7 , wherein the photosensitive second film is a substance that includes at least one of polyimide, silicone, acryl, epoxy, or spin-on carbon (SOC).

9 . The semiconductor device according to claim 1 , further comprising:

a first connection conductor that covers the multilayer wiring layer;

an electrode on a side of the surface of the semiconductor substrate, wherein the electrode is electrically connected to an external substrate; and

a second connection conductor that connects the first connection conductor and the electrode.

10 . The semiconductor device according to claim 9 , wherein the first film is on at least a part of the surface of the semiconductor substrate, a side wall surface of the through hole, or a surface of the multilayer wiring layer on a side of the semiconductor substrate.

11 . The semiconductor device according to claim 9 , wherein the first film is formed only on a side wall surface of the through hole.

12 . The semiconductor device according to claim 9 , wherein the first film is formed only on a bottom portion of the through hole.

13 . The semiconductor device according to claim 9 , wherein the photosensitive second film is formed on a surface of the first substrate and a side wall surface of the through hole.

14 . The semiconductor device according to claim 1 , wherein the multilayer wiring layer further includes at least one of a memory circuit, a control circuit, or an interposer.

15 . The semiconductor device according to claim 14 , wherein

the pixel units are configured to:

execute photoelectric conversion; and

output a pixel signal based on the photoelectric conversion,

the pixel units are two-dimensionally arranged, and

the logic circuit is configured to process the pixel signal.