IP Library › Granted Patent US 12,696,626
Granted Patent B2
US 12,696,626 · App. 18/264,476 · Granted Jul 28, 2026

Display device

Inventors: Rai Sato (Tochigi, JP); Masahiro Katayama (Tochigi, JP); Naoto Goto (Tochigi, JP); Yasutaka Nakazawa (Tochigi, JP); Kenichi Okazaki (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K59/122H10K59/1201H10K59/35H10K71/233
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,696,626
App. No.
18/264,476
Filed
Aug 7, 2023
Granted
Jul 28, 2026
Kind
B2
Art Unit
2875
USPC
313/500
Abstract

A display device with high resolution is provided. A display device with a high aperture ratio is provided. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode. The first insulating layer covers end portions of the first pixel electrode and the second pixel electrode. The second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers an end portion of the first insulating layer. The first EL layer is provided over the first pixel electrode and the second EL layer is provided over the second pixel electrode. An end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer. The common electrode includes a portion overlapping with the first EL layer and a portion overlapping with the second EL layer. The first insulating layer includes an organic resin, and the second insulating layer includes an inorganic insulating material.

Claims (55)

1 . A display device comprising:

a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode,

wherein the first pixel electrode and the second pixel electrode are provided side by side,

wherein the first insulating layer covers an end portion of the first pixel electrode and an end portion of the second pixel electrode,

wherein part of an end portion of the first insulating layer overlaps with a top surface of the first pixel electrode and another part of the end portion of the first insulating layer overlaps with a top surface of the second pixel electrode,

wherein the second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers the end portion of the first insulating layer,

wherein part of an end portion of the second insulating layer overlaps with the top surface of the first pixel electrode and another part of the end portion of the second insulating layer overlaps with the top surface of the second pixel electrode,

wherein the first EL layer is provided over the first pixel electrode,

wherein the second EL layer is provided over the second pixel electrode,

wherein an end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer,

wherein the common electrode comprises a portion overlapping with the first EL layer and a portion overlapping with the second EL layer,

wherein the first insulating layer comprises an organic resin,

wherein the second insulating layer comprises an inorganic insulating material,

wherein the second insulating layer comprises a first insulating film and a second insulating film over the first insulating film, and

wherein a first angle formed by a side surface and a bottom surface of the first insulating film is different from a second angle formed by a side surface and a bottom surface of the second insulating film.

2 . The display device according to claim 1 ,

wherein the first insulating layer comprises a curved surface between a top surface and the end portion, and

wherein the second insulating layer comprises a portion in which an angle formed by a side surface and a bottom surface is greater than or equal to 20° and less than 90°.

3 . The display device according to claim 1 ,

wherein the first insulating layer comprises an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide-amide resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, or a precursor of these resins.

4 . The display device according to claim 1 ,

wherein the second insulating layer comprises a depressed portion in a region overlapping with neither the first EL layer nor the second EL layer.

5 . The display device according to claim 1 ,

wherein the second insulating layer is separated into a first region and a second region,

wherein the first region overlaps with the first EL layer and does not overlap with the second EL layer, and

wherein the second region does not overlap with the first EL layer and overlaps with the second EL layer.

6 . The display device according to claim 1 ,

wherein the first insulating film is thinner than the second insulating film, and

wherein the first angle is greater than the second angle.

7 . The display device according to claim 1 ,

wherein the second insulating film is thinner than the first insulating film, and

wherein the second angle is greater than the first angle.

8 . The display device according to claim 1 ,

wherein the first insulating film comprises a silicon nitride film, and

wherein the second insulating film comprises a silicon oxynitride film.

9 . A fabrication method of a display device, comprising:

forming a first pixel electrode and a second pixel electrode;

forming a photosensitive resin film to cover the first pixel electrode and the second pixel electrode;

forming a first insulating layer to cover an end portion of the first pixel electrode and an end portion of the second pixel electrode performing light exposure by using a first photomask and development on the resin film;

forming an inorganic insulating film to cover the first pixel electrode, the second pixel electrode, and the first insulating layer;

forming a resist film over the inorganic insulating film;

forming a resist mask by performing light exposure by using the first photomask and development on the resist film; and

forming a second insulating layer to cover a top surface of the first pixel electrode, a top surface of the second pixel electrode, and a top surface of the first insulating layer by etching the inorganic insulating film that is not covered by the resist mask,

wherein the second insulating layer comprises a first insulating film and a second insulating film over the first insulating film, and

wherein a first angle formed by a side surface and a bottom surface of the first insulating film is different from a second angle formed by a side surface and a bottom surface of the second insulating film.

10 . The fabrication method of a display device according to claim 9 ,

wherein a first EL layer is formed over the first pixel electrode after the formation of the second insulating layer,

wherein a second EL layer is formed over the second pixel electrode,

wherein a common electrode is formed over the first EL layer and the second EL layer, and

wherein the first EL layer and the second EL layer are processed into an island shape or a band-like shape by a photolithography method.

11 . The fabrication method of a display device according to claim 9 ,

wherein the first insulating layer comprises an acrylic resin, a polyimide resin, an epoxy resin, a polyamide resin, a polyimide-amide resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, or a precursor of these resins.

12 . The fabrication method of a display device according to claim 9 ,

wherein the first insulating film is a silicon nitride film, and

wherein the second insulating film is a silicon oxynitride film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 7, 2023
From: SATO, RAI; KATAYAMA, MASAHIRO; GOTO, NAOTO; NAKAZAWA, YASUTAKA; OKAZAKI, KENICHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 064509/0159 →
Priority Claims (1)
JP 2021-020656 · Feb 12, 2021 · national
Continuity (1)
Related Publication 20240040846A1 · Feb 1, 2024
References Cited (85)
US 5953985A · Kobayashi · 1999 [cited by applicant]
US 6120338A · Hirano et al. · 2000 [cited by applicant]
US 7291970B2 · Kuwabara · 2007 [cited by applicant]
US 7294856B2 · Ito et al. · 2007 [cited by applicant]
US 7795809B2 · Ito et al. · 2010 [cited by applicant]
US 7863814B2 · Mitsuya et al. · 2011 [cited by applicant]
US 8358057B2 · Oota · 2013 [cited by applicant]
US 9035330B2 · Kang et al. · 2015 [cited by applicant]
US 10374018B2 · Aoyama et al. · 2019 [cited by applicant]
US 11659758B2 · Kamada et al. · 2023 [cited by applicant]
US 20020072139A1 · Kashiwabara · 2002 [cited by applicant]
US 20050057151A1 · Kuwabara · 2005 [cited by applicant]
US 20050112341A1 · Ito et al. · 2005 [cited by applicant]
US 20080303424A1 · Mitsuya et al. · 2008 [cited by applicant]
US 20110148290A1 · Oota · 2011 [cited by applicant]
US 20110272715A1 · Kang · 2011 [cited by examiner]
US 20120256204A1 · Yoshizumi et al. · 2012 [cited by applicant]
US 20120273804A1 · Hatano · 2012 [cited by applicant]
US 20120276484A1 · Izumi et al. · 2012 [cited by applicant]
US 20130084531A1 · Hamaguchi et al. · 2013 [cited by applicant]
US 20130084664A1 · Yoshitoku et al. · 2013 [cited by applicant]
US 20130084666A1 · Oshige · 2013 [cited by applicant]
US 20130280839A1 · Sonoda et al. · 2013 [cited by applicant]
US 20130295705A1 · Sonoda et al. · 2013 [cited by applicant]
US 20140004640A1 · Hamaguchi et al. · 2014 [cited by applicant]
US 20140004642A1 · Otsuka et al. · 2014 [cited by applicant]
US 20140197394A1 · Otsuka et al. · 2014 [cited by applicant]
US 20150060826A1 · Matsumoto et al. · 2015 [cited by applicant]
US 20150069360A1 · Sato · 2015 [cited by applicant]
US 20150076476A1 · Odaka et al. · 2015 [cited by applicant]
US 20160172595A1 · Malinowski et al. · 2016 [cited by applicant]
US 20160315133A1 · Sato · 2016 [cited by applicant]
US 20170141167A1 · Naganuma · 2017 [cited by applicant]
US 20170256754A1 · Defranco et al. · 2017 [cited by applicant]
US 20180190908A1 · Ke et al. · 2018 [cited by applicant]
US 20200203662A1 · Mollard et al. · 2020 [cited by applicant]
US 20210005669A1 · Kamada et al. · 2021 [cited by applicant]
US 20230255094A1 · Kamada et al. · 2023 [cited by applicant]
CN 001617639A · 2005 [cited by applicant]
CN 001692679A · 2005 [cited by applicant]
CN 101296539A · 2008 [cited by applicant]
CN 112186111A · 2021 [cited by applicant]
JP 2000036385A · 2000 [cited by applicant]
JP 2003059663A · 2003 [cited by applicant]
JP 2004319119A · 2004 [cited by applicant]
JP 2005174906A · 2005 [cited by applicant]
JP 2008098106A · 2008 [cited by applicant]
JP 2008147072A · 2008 [cited by applicant]
JP 2008251270A · 2008 [cited by applicant]
JP 2008270118A · 2008 [cited by applicant]
JP 2011238597A · 2011 [cited by applicant]
JP 2012015129A · 2012 [cited by applicant]
JP 2012160473A · 2012 [cited by applicant]
JP 2014120218A · 2014 [cited by applicant]
JP 2014135251A · 2014 [cited by applicant]
JP 2014150057A · 2014 [cited by applicant]
JP 2014232568A · 2014 [cited by applicant]
JP 2015115178A · 2015 [cited by applicant]
JP 2016197494A · 2016 [cited by applicant]
JP 2019179696A · 2019 [cited by applicant]
JP 2020160305A · 2020 [cited by applicant]
JP 2021012366A · 2021 [cited by applicant]
KR 20050045824A · 2005 [cited by applicant]
KR 20050053640A · 2005 [cited by applicant]
KR 20080095765A · 2008 [cited by applicant]
KR 20110123528A · 2011 [cited by applicant]
KR 20210004867A · 2021 [cited by applicant]
TW 200517008 · 2005 [cited by applicant]
TW 202104541 · 2021 [cited by applicant]
WO WO2004026002 · 2004 [cited by applicant]
WO WO2018087625 · 2018 [cited by applicant]
Lamprecht.B et al., “Organic optoelectronic device fabrication using standard UV photolithography”, Phys. Stat. Sol. (RRL) (Physica Status Solidi. Rapid Research Letters.), Oct. 30, 2007, vol. 2, No. 1, pp. 16-18. [cited by applicant]
Zakhidov.A et al., “Orthogonal processing: A new strategy for organic electronics”, Chem. Sci. (Chemical Science), Apr. 7, 2011, vol. 2, No. 6, pp. 1178-1182. [cited by applicant]
Malinowski.P et al., “High resolution photolithography for direct view active matrix organic light-emitting diode augmented reality displays”, J. Soc. Inf. Display (Journal of the Society for Information Display), Apr. … [cited by applicant]
Malinowski.P et al., “Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system”, Organic Electronics, Jul. 12, 2014, vol. 15, No. 10, pp. 2355-2359. [cited by applicant]
Malinowski.P et al., “Multicolor 1250 ppi OLED Arrays Patterened by Photolithography”, SID Digest '16 : SID International Symposium Digest of Technical Papers, May 22, 2016, vol. 47, No. 1, pp. 1009-1012. [cited by applicant]
Papadopoulos.N et al., “AMOLED Displays with In-Pixel Photodetector”, Liquid Crystals and Display Technology, Jul. 9, 2020, pp. 1-19. [cited by applicant]
Ke.T et al., “Technology Developments in High-Resolution FMM-free OLED and BEOL IGZO TFTs for Power-Efficient Microdisplays”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 1, 2021, vol. 52… [cited by applicant]
Malinowski.P et al., “Integration of additional functionalities into the frontplane of AMOLED displays”, SID Digest '20 : SID International Symposium Digest of Technical Papers, Aug. 1, 2020, vol. 51, No. 1, pp. 646-649. [cited by applicant]
Malinowski.P et al., “Organic photolithography for displays with integrated fingerprint scanner”, SID Digest '19 : SID International Symposium Digest of Technical Papers, May 29, 2019, vol. 50, No. 1, pp. 1007-1010. [cited by applicant]
Ke.T et al., “Island and Hole Fabrication on OLED Stack for High-Resolution Sensor in Display Application”, IDW '20 : Proceedings of the 27th International Display Workshops, Dec. 9, 2020, vol. 27, pp. 902-905. [cited by applicant]
Gather.M et al., “Solution-Processed Full-Color Polymer-OLED Displays Fabricated by Direct Photolithography”, SID Digest '06 : SID International Symposium Digest of Technical Papers, Jun. 1, 2006, vol. 37, No. 1, pp. 90… [cited by applicant]
Malinowski.P et al., “Photolithography as Enabler of AMOLED Displays Beyond 1000 ppi”, SID Digest '17 : SID International Symposium Digest of Technical Papers, May 1, 2017, vol. 48, No. 1, pp. 623-626. [cited by applicant]
International Search Report (Application No. PCT/IB2022/050739) Dated Apr. 19, 2022. [cited by applicant]
Written Opinion (Application No. PCT/IB2022/050739) Dated Apr. 19, 2022. [cited by applicant]