IP Library Granted Patent US 12,588,358
Granted Patent B2
US 12,588,358 · App. 18/270,751 · Granted Mar 24, 2026

Display device and method for manufacturing display device

Inventors: Shunpei Yamazaki (Setagaya, JP); Kenichi Okazaki (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K59/1201H10K59/353H10K59/873
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Quick Facts
Patent No.
US 12,588,358
App. No.
18/270,751
Granted
Mar 24, 2026
Kind
B2
Abstract

A method for manufacturing a display device that can easily achieve higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is deposited over a first pixel electrode, a first sacrificial film is formed to cover the first EL film and a first electrode, and the first sacrificial film and the first EL film are etched, so that a first EL layer is formed over the first pixel electrode. Then, the first sacrificial film is removed to expose the first electrode. Furthermore, a common electrode is formed over the first EL layer and the first electrode. The first EL film is etched by dry etching, and the first sacrificial film is removed by wet etching.

Claims (46)

1 . A method for manufacturing a display device, comprising:

a first step of forming a first pixel electrode, a second pixel electrode, and a first electrode;

a second step of depositing a first EL film over the first pixel electrode and the second pixel electrode;

a third step of forming a first sacrificial film covering the first EL film and the first electrode;

a fourth step of exposing the second pixel electrode by etching the first sacrificial film and the first EL film and forming a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer and the first electrode;

a fifth step of depositing a second EL film over the first pixel electrode and the second pixel electrode;

a sixth step of forming a second sacrificial film covering the second EL film and the first electrode;

a seventh step of forming a second EL layer over the second pixel electrode and a second sacrificial layer over the second EL layer by etching the second sacrificial film and the second EL film;

an eighth step of exposing the first EL layer, the second EL layer, and the first electrode by removing the first sacrificial layer and the second sacrificial layer;

a ninth step of forming a common layer over the first EL layer and the second EL layer; and

a tenth step of forming a common electrode over and in contact with the common layer and the first electrode.

2 . The method for manufacturing a display device, according to claim 1 ,

wherein the first EL film, the second EL film, and the common layer are formed by an evaporation method using a shielding mask.

3 . The method for manufacturing a display device, according to claim 1 ,

wherein the first pixel electrode and the second pixel electrode are arranged in a first direction,

wherein the first pixel electrode and a third pixel electrode are arranged in a second direction intersecting the first direction, and

wherein the method further comprises an eleventh step of removing portions of the common electrode, the common layer, and the first EL layer between the first pixel electrode and the third pixel electrode by etching after the tenth step.

4 . The method for manufacturing a display device, according to claim 3 , further comprising:

a twelfth step of forming an insulating layer between the first pixel electrode and the third pixel electrode between the first step and the second step,

wherein in the eleventh step, the common electrode, the common layer, and the first EL layer positioned over the insulating layer are etched and a portion of the insulating layer is etched to form a recessed portion in the insulating layer.

5 . The method for manufacturing a display device, according to claim 1 ,

wherein the first sacrificial film and the second sacrificial film contain the same metal film, alloy film, metal oxide film, semiconductor film, or inorganic insulating film,

wherein in the fourth step, the first EL film is etched by dry etching using an etching gas not containing oxygen as its main component, and

wherein in the eighth step, the first sacrificial layer and the second sacrificial layer are removed by wet etching using a tetramethyl ammonium hydroxide aqueous solution, diluted hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed solution thereof.

6 . The method for manufacturing a display device, according to claim 5 ,

wherein the first sacrificial film and the second sacrificial film contain aluminum oxide.

7 . The method for manufacturing a display device, according to claim 1 , further comprising:

a thirteenth step of forming a hard mask between the third step and the fourth step,

wherein in the fourth step, after the first sacrificial film is etched using the hard mask, the hard mask and the first EL film are etched by the same treatment.

8 . The method for manufacturing a display device, according to claim 1 ,

wherein each of the first EL layer and the second EL layer is processed into a band-shaped top surface shape.

9 . The method for manufacturing a display device, according to claim 1 , further comprising:

a fourteenth step of forming a protective layer over the common electrode after the tenth step.

10 . A display device comprising:

a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element,

wherein the first light-emitting element comprises a first pixel electrode, a first EL layer, a common layer, and a common electrode,

wherein the second light-emitting element comprises a second pixel electrode, a second EL layer, the common layer, and the common electrode,

wherein the third light-emitting element comprises a third pixel electrode, the first EL layer, the common layer, and the common electrode,

wherein the fourth light-emitting element comprises a fourth pixel electrode, the second EL layer, the common layer, and the common electrode,

wherein an insulating layer is between the first pixel electrode and the third pixel electrode, between the second pixel electrode and the fourth pixel electrode, and between the first pixel electrode and the second pixel electrode,

wherein the first light-emitting element and the second light-emitting element are arranged in a first direction,

wherein the first light-emitting element and the third light-emitting element are arranged in a second direction intersecting the first direction,

wherein the second light-emitting element and the fourth light-emitting element are arranged in the second direction intersecting the first direction, and

wherein the common layer and the common electrode have a band shape extending in the first direction.

11 . The display device according to claim 10 , wherein the first EL layer, the common layer, and the common electrode comprise an end portion overlapping with the insulating layer between the first pixel electrode and the third pixel electrode.

12 . The display device according to claim 10 , wherein the second light-emitting element emits light of different color from the first light-emitting element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 3, 2023
From: YAMAZAKI, SHUNPEI; OKAZAKI, KENICHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 064138/0594 →
Priority Claims (1)
JP 2021-004540 · Jan 14, 2021 · national
Continuity (1)
Related Publication 20240065026A1 · Feb 22, 2024
References Cited (75)
US 5953985A · Kobayashi · 1999 [cited by applicant]
US 6120338A · Hirano et al. · 2000 [cited by applicant]
US 7399991B2 · Seo et al. · 2008 [cited by applicant]
US 7663149B2 · Seo et al. · 2010 [cited by applicant]
US 7742023B2 · Matsumoto · 2010 [cited by applicant]
US 10505141B2 · Du · 2019 [cited by examiner]
US 10727287B2 · Takagi · 2020 [cited by applicant]
US 10862036B2 · Ke et al. · 2020 [cited by applicant]
US 11532680B2 · Takagi · 2022 [cited by applicant]
US 20020072139A1 · Kashiwabara · 2002 [cited by applicant]
US 20070013629A1 · Matsumoto · 2007 [cited by applicant]
US 20110148290A1 · Oota · 2011 [cited by applicant]
US 20120256204A1 · Yoshizumi et al. · 2012 [cited by applicant]
US 20120273804A1 · Hatano · 2012 [cited by applicant]
US 20120276484A1 · Izumi et al. · 2012 [cited by applicant]
US 20130084531A1 · Hamaguchi et al. · 2013 [cited by applicant]
US 20130084664A1 · Yoshitoku et al. · 2013 [cited by applicant]
US 20130084666A1 · Oshige · 2013 [cited by applicant]
US 20130210176A1 · Fushimi · 2013 [cited by examiner]
US 20130280839A1 · Sonoda et al. · 2013 [cited by applicant]
US 20130295705A1 · Sonoda et al. · 2013 [cited by applicant]
US 20140004640A1 · Hamaguchi et al. · 2014 [cited by applicant]
US 20140004642A1 · Otsuka et al. · 2014 [cited by applicant]
US 20150060826A1 · Matsumoto. et al. · 2015 [cited by applicant]
US 20150069360A1 · Sato · 2015 [cited by applicant]
US 20150076476A1 · Odaka et al. · 2015 [cited by applicant]
US 20160172595A1 · Malinowski et al. · 2016 [cited by applicant]
US 20160315133A1 · Sato · 2016 [cited by applicant]
US 20170141167A1 · Naganuma · 2017 [cited by applicant]
US 20170256754A1 · Defranco et al. · 2017 [cited by applicant]
US 20180190908A1 · Ke et al. · 2018 [cited by applicant]
US 20200203662A1 · Mollard et al. · 2020 [cited by applicant]
US 20210143330A1 · Takata · 2021 [cited by examiner]
US 20210273030A1 · Zhao · 2021 [cited by examiner]
US 20220320191A1 · Yoshikawa · 2022 [cited by examiner]
US 20240040846A1 · Sato · 2024 [cited by examiner]
CN 108292714A · 2018 [cited by applicant]
JP 2000036385A · 2000 [cited by applicant]
JP 2002324673A · 2002 [cited by applicant]
JP 2003059663A · 2003 [cited by applicant]
JP 2007026704A · 2007 [cited by applicant]
JP 2008098106A · 2008 [cited by applicant]
JP 2008147072A · 2008 [cited by applicant]
JP 2008251270A · 2008 [cited by applicant]
JP 2010275598A · 2010 [cited by applicant]
JP 2012160473A · 2012 [cited by applicant]
JP 2014120218A · 2014 [cited by applicant]
JP 2014135251A · 2014 [cited by applicant]
JP 2014232568A · 2014 [cited by applicant]
JP 2015115178A · 2015 [cited by applicant]
JP 2016197494A · 2016 [cited by applicant]
JP 2018063910A · 2018 [cited by applicant]
JP 2018521459 · 2018 [cited by applicant]
JP 2019179696A · 2019 [cited by applicant]
JP 2020035713A · 2020 [cited by applicant]
JP 2020160305A · 2020 [cited by applicant]
KR 20070008423A · 2007 [cited by applicant]
KR 20180021002A · 2018 [cited by applicant]
TW 200703216 · 2007 [cited by applicant]
TW 201705585 · 2017 [cited by applicant]
WO WO2017001353 · 2017 [cited by applicant]
WO WO2017212797 · 2017 [cited by applicant]
International Search Report (Application No. PCT/IB2022/050074) Dated May 17, 2022. [cited by applicant]
Written Opinion (Application No. PCT/IB2022/050074) Dated May 17, 2022. [cited by applicant]
Zakhidov.A et al., “Orthogonal processing: A new strategy for organic electronics”, Chem. Sci. (Chemical Science), Apr. 7, 2011, vol. 2, No. 6, pp. 1178-1182. [cited by applicant]
Malinowski.P et al., “High resolution photolithography for direct view active matrix organic light-emitting diode augmented reality displays”, J. Soc. Inf. Display (Journal of the Society for Information Display), Apr. … [cited by applicant]
Malinowski.P et al., “Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system”, Organic Electronics, Jul. 12, 2014, vol. 15, No. 10, pp. 2355-2359. [cited by applicant]
Malinowski.P et al., “Multicolor 1250 ppi OLED Arrays Patterened by Photolithography”, SID Digest '16 : SID International Symposium Digest of Technical Papers, May 22, 2016, vol. 47, No. 1, pp. 1009-1012. [cited by applicant]
Papadopoulos.N et al., “AMOLED Displays with In-Pixel Photodetector”, Liquid Crystals and Display Technology, Jul. 9, 2020, pp. 1-19. [cited by applicant]
Ke.T et al., “Technology Developments in High-Resolution FMM-free OLED and BEOL IGZO TFTs for Power-Efficient Microdisplays”, SID Digest '21 : SID International Symposium Digest of Technical Papers, May 1, 2021, vol. 52… [cited by applicant]
Malinowski.P et al., “Integration of additional functionalities into the frontplane of AMOLED displays”, SID Digest '20 : SID International Symposium Digest of Technical Papers, Aug. 1, 2020, vol. 51, No. 1, pp. 646-649. [cited by applicant]
Malinowski.P et al., “Organic photolithography for displays with integrated fingerprint scanner”, SID Digest '19 : SID International Symposium Digest of Technical Papers, May 29, 2019, vol. 50, No. 1, pp. 1007-1010. [cited by applicant]
Ke.T et al., “Island and Hole Fabrication on OLED Stack for High-Resolution Sensor in Display Application”, IDW '20 : Proceedings of the 27th International Display Workshops, Dec. 9, 2020, vol. 27, pp. 902-905. [cited by applicant]
Gather.M et al., “Solution-Processed Full-Color Polymer-OLED Displays Fabricated by Direct Photolithography”, SID Digest '06 : SID International Symposium Digest of Technical Papers, Jun. 1, 2006, vol. 37, No. 1, pp. 90… [cited by applicant]
Malinowski.P et al., “Photolithography as Enabler of AMOLED Displays Beyond 1000 ppi”, SID Digest '17 : SID International Symposium Digest of Technical Papers, May 1, 2017, vol. 48, No. 1, pp. 623-626. [cited by applicant]