IP Library › Granted Patent US 12,601,045
Granted Patent B2
US 12,601,045 · App. 18/280,517 · Granted Apr 14, 2026

Manufacturing equipment for light-emitting device

Inventors: Shunpei Yamazaki (Setagaya, JP); Ryota Hodo (Atsugi, JP); Yasuhiro Jinbo (Isehara, JP); Kenichi Okazaki (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
C23C14/568H10K59/1201H10K71/10H10K71/231H10K71/40
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Quick Facts
Patent No.
US 12,601,045
App. No.
18/280,517
Granted
Apr 14, 2026
Kind
B2
Abstract

Manufacturing equipment in which processes from processing to sealing of an organic compound film can be successively performed is provided. A patterning process of a light-emitting device and a sealing process that is performed to prevent the surface and side surface of an organic layer from being exposed to the air can be performed successively, whereby a minute light-emitting device with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can be incorporated in in-line manufacturing equipment where apparatuses are arranged in the order of processes for a light-emitting device, resulting in high throughput manufacturing.

Claims (62)

1 . Manufacturing equipment for a light-emitting device, comprising:

a load chamber;

a first etching apparatus;

a plasma treatment apparatus;

a standby chamber;

a deposition apparatus;

a second etching apparatus;

an unload chamber;

a transfer chamber; and

a carrying device,

wherein the carrying device is provided in the transfer chamber,

wherein the load chamber, the first etching apparatus, the plasma treatment apparatus, the standby chamber, the deposition apparatus, the second etching apparatus, and the unload chamber are each connected to the transfer chamber through a gate valve,

wherein the carrying device is configured to transfer an object to be processed from one of the load chamber, the first etching apparatus, the plasma treatment apparatus, the standby chamber, the deposition apparatus, the second etching apparatus, and the unload chamber to another one of the load chamber, the first etching apparatus, the plasma treatment apparatus, the standby chamber, the deposition apparatus, the second etching apparatus, and the unload chamber,

wherein the object to be processed comprising an organic compound film over a substrate, a first inorganic film over the organic compound film, and a resist mask over the first inorganic film is carried into the load chamber,

wherein the object to be processed is carried to the first etching apparatus, the plasma treatment apparatus, the standby chamber, the deposition apparatus, and the second etching apparatus in this order, and

wherein the organic compound film is processed into an island-shaped organic compound layer, a protective layer is formed on a side surface of the island-shaped organic compound layer, and the object to be processed is carried out to the unload chamber.

2 . The manufacturing equipment for a light-emitting device according to claim 1 ,

wherein the first etching apparatus is a dry etching apparatus in which the first inorganic film is formed to have an island shape using the resist mask as a mask and the organic compound film is processed into the island-shaped organic compound layer using the island-shaped first inorganic film as a mask.

3 . The manufacturing equipment for a light-emitting device according to claim 2 ,

wherein the first etching apparatus is configured to perform ashing to remove the resist mask.

4 . The manufacturing equipment for a light-emitting device, according to claim 1 ,

wherein in the plasma treatment apparatus, a side surface of the island-shaped organic compound layer is irradiated with plasma generated from an inert gas to perform cleaning on the side surface of the island-shaped organic compound layer.

5 . The manufacturing equipment for a light-emitting device according to claim 1 ,

wherein the standby chamber is configured to store a plurality of the objects to be processed.

6 . The manufacturing equipment for a light-emitting device according to claim 1 ,

wherein the deposition apparatus is an ALD apparatus in which a second inorganic film covering the first inorganic film and the island-shaped organic compound layer is deposited.

7 . The manufacturing equipment for a light-emitting device according to claim 6 ,

wherein the deposition apparatus is of a batch processing type.

8 . The manufacturing equipment for a light-emitting device according to claim 6 ,

wherein the second etching apparatus is a dry etching apparatus in which the protective layer is formed on the side surface of the island-shaped organic compound layer by performing anisotropic etching on the second inorganic film.

9 . Manufacturing equipment for a light-emitting device,

wherein the manufacturing equipment for a light-emitting device according to claim 1 is a third cluster,

wherein a plurality of apparatuses in which a photolithography process with the resist mask is performed is a second cluster, and

wherein a plurality of apparatuses in which a deposition process of the organic compound film and the first inorganic film is performed is a first cluster.

10 . The manufacturing equipment for a light-emitting device according to claim 9 ,

wherein the first cluster, the second cluster, and the third cluster are connected in sequence.

11 . The manufacturing equipment for a light-emitting device according to claim 9 ,

wherein the object to be processed stored in a container having an inert gas atmosphere is transferred between the first cluster and the second cluster and between the second cluster and the third cluster.

12 . The manufacturing equipment for a light-emitting device according to claim 9 ,

wherein three combinations of the first cluster, the second cluster, and the third cluster are included.

13 . The manufacturing equipment for a light-emitting device according to claim 9 ,

wherein the first cluster comprises a surface treatment apparatus, and

wherein the surface treatment apparatus uses plasma generated from a halogen-containing gas.

14 . The manufacturing equipment for a light-emitting device according to claim 9 ,

wherein the first cluster comprises one or more deposition apparatuses selected from an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.

15 . The manufacturing equipment for a light-emitting device according to claim 9 ,

wherein the second cluster comprises an application apparatus, a light exposure apparatus, a development apparatus, and a baking apparatus.

16 . Manufacturing equipment for a light-emitting device, comprising:

a load chamber;

a first etching apparatus;

a plasma treatment apparatus;

a standby chamber;

a deposition apparatus;

a second etching apparatus;

an unload chamber;

a transfer chamber; and

a carrying device,

wherein the carrying device is provided in the transfer chamber,

wherein the carrying device is configured to transfer an object to be processed between the load chamber, the first etching apparatus, the plasma treatment apparatus, the standby chamber, the deposition apparatus, the second etching apparatus, and the unload chamber,

wherein the object to be processed is carried into the load chamber,

wherein the object to be processed is carried to the first etching apparatus, the plasma treatment apparatus, the standby chamber, the deposition apparatus, and the second etching apparatus in this order, and

wherein the object to be processed is carried out to the unload chamber.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 6, 2023
From: YAMAZAKI, SHUNPEI; HODO, RYOTA; JINBO, YASUHIRO; OKAZAKI, KENICHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 064814/0417 →
Priority Claims (3)
JP 2021-051710 · Mar 25, 2021 · national
JP 2021-065856 · Apr 8, 2021 · national
JP 2022-001992 · Jan 10, 2022 · national
Continuity (1)
Related Publication 20240155870A1 · May 9, 2024
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