IP Library Granted Patent US 12,489,402
Granted Patent B2
US 12,489,402 · App. 18/296,033 · Granted Dec 2, 2025

Voltage ripple reduction in a power management circuit

Inventors: Nadim Khlat (Cugnaux, FR); Michael R. Kay (Summerfield, NC)
Assignee: Qorvo US, Inc.
H03F1/0233H03F3/21H03F2200/105H03F2200/451
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Quick Facts
Patent No.
US 12,489,402
App. No.
18/296,033
Granted
Dec 2, 2025
Kind
B2
Abstract

Voltage ripple reduction in a power management circuit is disclosed. The power management circuit includes a power amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage and an envelope tracking integrated circuit (ETIC) configured to provide the modulated voltage to the power amplifier circuit via a conductive path. Notably, an output impedance presenting at an input of the power amplifier circuit can interact with a modulated load current in the power amplifier circuit to create a voltage ripple in the modulated voltage to potentially cause an undesirable error in the RF signal. In this regard, a notch circuit is provided, preferably in the ETIC, to reduce the voltage ripple within a modulation bandwidth of the RF signal. As a result, it is possible to minimize the undesirable error, such as root-mean-square (RMS) error vector magnitude (EVM), within the modulation bandwidth of the RF signal.

Claims (51)

1 . A power management circuit comprising:

a power amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage received at a power amplifier input, wherein the modulated voltage received at the power amplifier input comprises a voltage ripple caused by an output impedance presenting at the power amplifier input and a load current induced by the modulated voltage; and

an envelope tracking integrated circuit (ETIC) coupled to the power amplifier input via a conductive path and comprising:

a voltage modulation circuit configured to generate the modulated voltage at a voltage output based on a modulated target voltage; and

a notch circuit coupled to the power amplifier input via a notch path and configured to resonate at a notch frequency within a modulation bandwidth of the RF signal to reduce the voltage ripple to thereby achieve a defined performance threshold.

2 . The power management circuit of claim 1 , wherein the ETIC further comprises a control circuit configured to determine the notch frequency and cause the notch circuit to resonate at the notch frequency.

3 . The power management circuit of claim 2 , wherein the control circuit is further configured to determine the notch frequency based on a target modulation of the load current within the modulation bandwidth of the RF signal to thereby minimize a root-mean-square (RMS) error vector magnitude (EVM) at the target modulation.

4 . The power management circuit of claim 2 , wherein the control circuit is further configured to determine the notch frequency based on a target modulation of the load current within the modulation bandwidth of the RF signal to thereby minimize a peak error vector magnitude (EVM) at the target modulation.

5 . The power management circuit of claim 2 , wherein the control circuit is further configured to determine the notch frequency to factor in a notch inductance associated with the notch path.

6 . The power management circuit of claim 2 , wherein the notch circuit comprises:

a notch capacitor coupled to the power amplifier input;

a notch inductor comprising a plurality of tap points each corresponding to a respective one of a plurality of notch inductances; and

a plurality of notch switches each coupled between a respective one of the plurality of tap points and a ground.

7 . The power management circuit of claim 6 , wherein the control circuit is further configured to close a selected one of the plurality of notch switches to thereby cause the notch circuit to resonate at the determined notch frequency.

8 . The power management circuit of claim 1 , wherein the voltage modulation circuit is coupled to the power amplifier input via a feedback path and further configured to:

receive power amplifier voltage feedback indicating the voltage ripple in the modulated voltage received at the power amplifier input; and

modify the modulated voltage based on the power amplifier voltage feedback to cause a reduction in the output impedance to thereby reduce the voltage ripple in the modulated voltage received at the power amplifier input.

9 . The power management circuit of claim 8 , wherein the voltage modulation circuit comprises:

a voltage amplifier configured to generate an initial modulated voltage at a voltage amplifier output based on the modulated target voltage and a supply voltage; and

an offset capacitor coupled between the voltage amplifier output and the voltage output and configured to raise the initial modulated voltage by an offset voltage to thereby generate the modulated voltage at the voltage output.

10 . The power management circuit of claim 9 , wherein the voltage amplifier is further configured to:

receive the power amplifier voltage feedback indicating the voltage ripple at the power amplifier input; and

modify the initial modulated voltage based on the indicated voltage ripple to thereby reduce the voltage ripple in the modulated voltage.

11 . The power management circuit of claim 10 , wherein the voltage amplifier comprises:

an input/bias stage configured to generate a pair of bias signals based on the modulated target voltage and feedback of the modulated voltage; and

an output stage configured to generate the initial modulated voltage based on a selected one of the pair of bias signals.

12 . The power management circuit of claim 11 , wherein the output stage is further configured to:

receive the power amplifier voltage feedback indicating the voltage ripple at the power amplifier input; and

modify the initial modulated voltage based on the indicated voltage ripple to thereby reduce the voltage ripple in the modulated voltage.

13 . The power management circuit of claim 12 , wherein the output stage comprises:

a first transistor having a first drain electrode configured to receive the supply voltage, a first source electrode coupled to the voltage amplifier output, and a first gate electrode configured to receive a positive one of the pair of bias signals; and

a second transistor having a second drain electrode coupled to a ground, a second source electrode coupled to the voltage amplifier output, and a second gate electrode configured to receive a negative one of the pair of bias signals.

14 . The power management circuit of claim 13 , wherein the first transistor is a p-type field-effect transistor (pFET) and the second transistor is an n-type field-effect transistor (nFET).

15 . The power management circuit of claim 13 , wherein:

the first transistor is further configured to source a high-frequency current from the supply voltage in response to receiving the positive one of the pair of bias signals; and

the second transistor is further configured to sink the high-frequency current from the voltage output to the ground in response to receiving the negative one of the pair of bias signals.

16 . The power management circuit of claim 13 , wherein the output stage further comprises:

a first Miller capacitor coupled between the voltage amplifier output and the first gate electrode; and

a second Miller capacitor coupled between the voltage output and the second gate electrode.

17 . The power management circuit of claim 16 , wherein the first Miller capacitor and the second Miller capacitor are configured to reduce the output impedance presenting at the power amplifier input.

18 . The power management circuit of claim 13 , wherein the output stage further comprises:

a first resistor-capacitor circuit coupled between the power amplifier input and the first gate electrode of the first transistor; and

a second resistor-capacitor circuit coupled between the power amplifier input and the second gate electrode of the second transistor.

19 . The power management circuit of claim 18 , wherein:

the first resistor-capacitor circuit is configured to:

receive the power amplifier voltage feedback via the feedback path; and

modify the positive one of the pair of bias signals based on the voltage ripple indicated in the power amplifier voltage feedback; and

the second resistor-capacitor circuit is configured to:

receive the power amplifier voltage feedback via the feedback path; and

modify the negative one of the pair of bias signals based on the voltage ripple indicated in the power amplifier voltage feedback.

20 . The power management circuit of claim 19 , wherein each of the first resistor-capacitor circuit and the second resistor-capacitor circuit comprises a respective adjustable capacitor and a respective adjustable resistor that can be adjusted to reduce the output impedance presenting at the power amplifier input.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2023
From: KHLAT, NADIM; KAY, MICHAEL R.
To: QORVO US, INC.
Reel/Frame 063230/0851 →
Continuity (2)
Provisional Application 63347065 · May 31, 2022
Related Publication 20230387860A1 · Nov 30, 2023
References Cited (279)
US 4797898A · Martinez · 1989 [cited by applicant]
US 5793821A · Norrell et al. · 1998 [cited by applicant]
US 6166601A · Shalom et al. · 2000 [cited by applicant]
US 6275685B1 · Wessel et al. · 2001 [cited by applicant]
US 6630862B1 · Perthold et al. · 2003 [cited by applicant]
US 6760451B1 · Craven et al. · 2004 [cited by applicant]
US 6806767B2 · Dow · 2004 [cited by applicant]
US 6947711B1 · Leyonhjelm · 2005 [cited by applicant]
US 7076225B2 · Li et al. · 2006 [cited by applicant]
US 7170342B2 · Suzuki et al. · 2007 [cited by applicant]
US 7430248B2 · McCallister · 2008 [cited by applicant]
US 7522658B2 · Jensen · 2009 [cited by applicant]
US 7583754B2 · Liu · 2009 [cited by applicant]
US 7663436B2 · Takano et al. · 2010 [cited by applicant]
US 7683713B2 · Hongo · 2010 [cited by applicant]
US 7738593B2 · Howard · 2010 [cited by applicant]
US 7755429B2 · Nguyen et al. · 2010 [cited by applicant]
US 7831221B2 · Leffel et al. · 2010 [cited by applicant]
US 7859338B2 · Bajdechi et al. · 2010 [cited by applicant]
US 7889820B2 · Murthy et al. · 2011 [cited by applicant]
US 7978009B2 · Mu · 2011 [cited by applicant]
US 8493141B2 · Khlat et al. · 2013 [cited by applicant]
US 8605819B2 · Lozhkin · 2013 [cited by applicant]
US 8649745B2 · Bai et al. · 2014 [cited by applicant]
US 8749309B2 · Ho et al. · 2014 [cited by applicant]
US 8831544B2 · Walker et al. · 2014 [cited by applicant]
US 8884692B2 · Lee · 2014 [cited by applicant]
US 9001947B2 · Wyville · 2015 [cited by applicant]
US 9036734B1 · Mauer et al. · 2015 [cited by applicant]
US 9065504B2 · Kwon et al. · 2015 [cited by applicant]
US 9112413B2 · Barth et al. · 2015 [cited by applicant]
US 9356760B2 · Larsson et al. · 2016 [cited by applicant]
US 9438196B2 · Smith et al. · 2016 [cited by applicant]
US 9461596B1 · Ozard · 2016 [cited by applicant]
US 9560595B2 · Dakshinamurthy et al. · 2017 [cited by applicant]
US 9692366B2 · Pilgram · 2017 [cited by applicant]
US 9705477B2 · Velazquez · 2017 [cited by applicant]
US 9973370B1 · Langer et al. · 2018 [cited by applicant]
US 10177719B2 · Gazneli et al. · 2019 [cited by applicant]
US 10181478B2 · Scott et al. · 2019 [cited by applicant]
US 10305435B1 · Murugesu et al. · 2019 [cited by applicant]
US 10326408B2 · Khlat et al. · 2019 [cited by applicant]
US 10361744B1 · Khlat · 2019 [cited by applicant]
US 10432145B2 · Khlat · 2019 [cited by applicant]
US 10476437B2 · Nag et al. · 2019 [cited by applicant]
US 10778345B2 · El-Hassan et al. · 2020 [cited by applicant]
US 11005368B2 · Bansal et al. · 2021 [cited by applicant]
US 11088660B2 · Lin et al. · 2021 [cited by applicant]
US 11387789B2 · Khlat et al. · 2022 [cited by applicant]
US 11424719B2 · Khlat · 2022 [cited by applicant]
US 11483186B2 · Casper et al. · 2022 [cited by applicant]
US 11569783B2 · Nomiyama et al. · 2023 [cited by applicant]
US 11637531B1 · Perreault et al. · 2023 [cited by applicant]
US 20010022532A1 · Dolman · 2001 [cited by applicant]
US 20010054974A1 · Wright · 2001 [cited by applicant]
US 20020190811A1 · Sperber · 2002 [cited by applicant]
US 20030042979A1 · Gurvich et al. · 2003 [cited by applicant]
US 20040239446A1 · Gurvich et al. · 2004 [cited by applicant]
US 20040259509A1 · Duello et al. · 2004 [cited by applicant]
US 20050100105A1 · Jensen · 2005 [cited by applicant]
US 20050254659A1 · Heinsen · 2005 [cited by applicant]
US 20060068710A1 · Jensen · 2006 [cited by applicant]
US 20060209981A1 · Kluesing et al. · 2006 [cited by applicant]
US 20060217083A1 · Braithwaite · 2006 [cited by applicant]
US 20070032208A1 · Choi et al. · 2007 [cited by applicant]
US 20080009258A1 · Safarian et al. · 2008 [cited by applicant]
US 20080074209A1 · Ceylan et al. · 2008 [cited by applicant]
US 20080161073A1 · Park et al. · 2008 [cited by applicant]
US 20080246550A1 · Biedka et al. · 2008 [cited by applicant]
US 20090004981A1 · Eliezer et al. · 2009 [cited by applicant]
US 20090061787A1 · Koller et al. · 2009 [cited by applicant]
US 20090074106A1 · See et al. · 2009 [cited by applicant]
US 20090125264A1 · Betts et al. · 2009 [cited by applicant]
US 20090141828A1 · Huang et al. · 2009 [cited by applicant]
US 20090141830A1 · Ye · 2009 [cited by applicant]
US 20090232260A1 · Hayashi et al. · 2009 [cited by applicant]
US 20090302945A1 · Catoiu et al. · 2009 [cited by applicant]
US 20100135439A1 · Lackey · 2010 [cited by applicant]
US 20100298030A1 · Howard · 2010 [cited by applicant]
US 20110095826A1 · Hadjichristos et al. · 2011 [cited by applicant]
US 20110182347A1 · Cheung · 2011 [cited by applicant]
US 20110227767A1 · O'Brien · 2011 [cited by applicant]
US 20120068748A1 · Stojanovic et al. · 2012 [cited by applicant]
US 20120139635A1 · Ho et al. · 2012 [cited by applicant]
US 20120189081A1 · Omoto et al. · 2012 [cited by applicant]
US 20120244824A1 · Entezari et al. · 2012 [cited by applicant]
US 20120256688A1 · Onishi · 2012 [cited by applicant]
US 20130141062A1 · Khlat · 2013 [cited by applicant]
US 20130214858A1 · Tournatory et al. · 2013 [cited by applicant]
US 20130222057A1 · Henshaw · 2013 [cited by applicant]
US 20130243129A1 · Okuni et al. · 2013 [cited by applicant]
US 20140028368A1 · Khlat · 2014 [cited by applicant]
US 20140029683A1 · Morris et al. · 2014 [cited by applicant]
US 20140055199A1 · Takano et al. · 2014 [cited by applicant]
US 20140062590A1 · Khlat et al. · 2014 [cited by applicant]
US 20140062599A1 · Xu et al. · 2014 [cited by applicant]
US 20140065989A1 · McLaurin · 2014 [cited by applicant]
US 20140072307A1 · Zamani et al. · 2014 [cited by applicant]
US 20140084996A1 · Schwent et al. · 2014 [cited by applicant]
US 20140105264A1 · McLaurin et al. · 2014 [cited by applicant]
US 20140184337A1 · Nobbe et al. · 2014 [cited by applicant]
US 20140213196A1 · Langer et al. · 2014 [cited by applicant]
US 20140232470A1 · Wilson · 2014 [cited by applicant]
US 20140266432A1 · Scott et al. · 2014 [cited by applicant]
US 20140315504A1 · Sakai et al. · 2014 [cited by applicant]
US 20140361837A1 · Strange et al. · 2014 [cited by applicant]
US 20150028946A1 · Al-Qaq et al. · 2015 [cited by applicant]
US 20150126142A1 · Meredith · 2015 [cited by applicant]
US 20150333781A1 · Alon et al. · 2015 [cited by applicant]
US 20160173030A1 · Langer et al. · 2016 [cited by applicant]
US 20160174293A1 · Mow et al. · 2016 [cited by applicant]
US 20160182099A1 · Boddupally et al. · 2016 [cited by applicant]
US 20160182100A1 · Menkhoff et al. · 2016 [cited by applicant]
US 20160269210A1 · Kim et al. · 2016 [cited by applicant]
US 20160301432A1 · Shizawa et al. · 2016 [cited by applicant]
US 20160322992A1 · Okawa et al. · 2016 [cited by applicant]
US 20170005676A1 · Yan et al. · 2017 [cited by applicant]
US 20170104502A1 · Pratt · 2017 [cited by applicant]
US 20170149457A1 · Mayer et al. · 2017 [cited by applicant]
US 20170170838A1 · Pagnanelli · 2017 [cited by applicant]
US 20170230924A1 · Wolberg et al. · 2017 [cited by applicant]
US 20170338842A1 · Pratt · 2017 [cited by applicant]
US 20170353197A1 · Ruffieux et al. · 2017 [cited by applicant]
US 20180034418A1 · Blednov · 2018 [cited by applicant]
US 20180175813A1 · Scott et al. · 2018 [cited by applicant]
US 20180226923A1 · Nagamori · 2018 [cited by applicant]
US 20180248570A1 · Camuffo · 2018 [cited by applicant]
US 20190041890A1 · Chen et al. · 2019 [cited by applicant]
US 20190058530A1 · Rainish et al. · 2019 [cited by applicant]
US 20190068234A1 · Khlat et al. · 2019 [cited by applicant]
US 20190097671A1 · Dimpflmaier et al. · 2019 [cited by applicant]
US 20190238152A1 · Pagnanelli · 2019 [cited by applicant]
US 20190245496A1 · Khlat et al. · 2019 [cited by applicant]
US 20190296929A1 · Milicevic et al. · 2019 [cited by applicant]
US 20190319583A1 · El-Hassan et al. · 2019 [cited by applicant]
US 20190356285A1 · Khlat et al. · 2019 [cited by applicant]
US 20200106392A1 · Khlat et al. · 2020 [cited by applicant]
US 20200119699A1 · Nishihara et al. · 2020 [cited by applicant]
US 20200136561A1 · Khlat et al. · 2020 [cited by applicant]
US 20200136563A1 · Khlat · 2020 [cited by applicant]
US 20200136568A1 · Hosoda et al. · 2020 [cited by applicant]
US 20200162030A1 · Drogi et al. · 2020 [cited by applicant]
US 20200204422A1 · Khlat · 2020 [cited by applicant]
US 20200259685A1 · Khlat · 2020 [cited by applicant]
US 20200295713A1 · Khlat · 2020 [cited by applicant]
US 20200336111A1 · Khlat · 2020 [cited by applicant]
US 20210058970A1 · Kwak et al. · 2021 [cited by applicant]
US 20210067097A1 · Wang et al. · 2021 [cited by applicant]
US 20210099136A1 · Drogi et al. · 2021 [cited by applicant]
US 20210143859A1 · Hageraats et al. · 2021 [cited by applicant]
US 20210194517A1 · Mirea et al. · 2021 [cited by applicant]
US 20210194740A1 · Aldana et al. · 2021 [cited by applicant]
US 20210281228A1 · Khlat · 2021 [cited by applicant]
US 20210399690A1 · Panseri et al. · 2021 [cited by applicant]
US 20220021348A1 · Philpott et al. · 2022 [cited by applicant]
US 20220216834A1 · Myoung et al. · 2022 [cited by applicant]
US 20220360229A1 · Khlat · 2022 [cited by applicant]
US 20220407462A1 · Khlat · 2022 [cited by applicant]
US 20220407463A1 · Khlat et al. · 2022 [cited by applicant]
US 20220407464A1 · Khlat et al. · 2022 [cited by applicant]
US 20220407465A1 · Khlat · 2022 [cited by applicant]
US 20220407478A1 · Khlat et al. · 2022 [cited by applicant]
US 20220416730A1 · Su et al. · 2022 [cited by applicant]
US 20230065760A1 · Hellberg · 2023 [cited by applicant]
US 20230079153A1 · Khlat · 2023 [cited by applicant]
US 20230080621A1 · Khlat · 2023 [cited by applicant]
US 20230080652A1 · Khlat et al. · 2023 [cited by applicant]
US 20230081095A1 · Khlat · 2023 [cited by applicant]
US 20230082145A1 · Lin et al. · 2023 [cited by applicant]
US 20230140184A1 · Zhu et al. · 2023 [cited by applicant]
US 20230155614A1 · Jelonnek et al. · 2023 [cited by applicant]
US 20230238927A1 · Kay et al. · 2023 [cited by applicant]
US 20230318537A1 · Scott et al. · 2023 [cited by applicant]
US 20230387859A1 · Drogi et al. · 2023 [cited by applicant]
US 20230387861A1 · Maxim et al. · 2023 [cited by applicant]
US 20230421111A1 · Khlat et al. · 2023 [cited by applicant]
US 20240372665A1 · Khoryaev et al. · 2024 [cited by applicant]
US 20240426954A1 · Guan et al. · 2024 [cited by applicant]
BR 112015001348A2 · 2017 [cited by applicant]
CN 1151229A · 1997 [cited by applicant]
CN 1326321C · 2001 [cited by applicant]
CN 1550064A · 2004 [cited by applicant]
CN 1706096A · 2005 [cited by applicant]
CN 101036289A · 2007 [cited by applicant]
CN 101651459A · 2010 [cited by applicant]
CN 105812073A · 2016 [cited by applicant]
CN 107483021A · 2017 [cited by applicant]
CN 110798155A · 2020 [cited by applicant]
CN 110855251A · 2020 [cited by applicant]
CN 111064438A · 2020 [cited by applicant]
CN 210693998U · 2020 [cited by applicant]
CN 112995079A · 2021 [cited by applicant]
CN 113055324A · 2021 [cited by applicant]
CN 113659938A · 2021 [cited by applicant]
CN 113055324B · 2021 [cited by applicant]
CN 116015223A · 2023 [cited by applicant]
CN 113659938B · 2023 [cited by applicant]
CN 116794580A · 2023 [cited by applicant]
CN 117134711A · 2023 [cited by applicant]
CN 118117977A · 2024 [cited by applicant]
CN 118648236A · 2024 [cited by applicant]
CN 118872201A · 2024 [cited by applicant]
CN 118117977B · 2024 [cited by applicant]
CN 119072847A · 2024 [cited by applicant]
CN 119096468A · 2024 [cited by applicant]
EP 2705604A2 · 2014 [cited by applicant]
EP 2582041B1 · 2018 [cited by applicant]
EP 2232713B1 · 2018 [cited by applicant]
EP 3416340A1 · 2018 [cited by applicant]
JP 2011211533A · 2011 [cited by applicant]
JP 2015099972A · 2015 [cited by applicant]
KR 20110105319A · 2011 [cited by applicant]
WO 2007092794A2 · 2007 [cited by applicant]
WO 2010011551A2 · 2010 [cited by applicant]
WO 2010135711A1 · 2010 [cited by applicant]
WO 2012151594A2 · 2012 [cited by applicant]
WO 2014026178A1 · 2014 [cited by applicant]
WO 2021042088A2 · 2021 [cited by applicant]
WO 2023147211A1 · 2023 [cited by applicant]
WO 2023150539A1 · 2023 [cited by applicant]
WO 2023150545A1 · 2023 [cited by applicant]
WO 2023150587A1 · 2023 [cited by applicant]
Advisory Action for U.S. Appl. No. 17/942,472, mailed Sep. 15, 2023, 3 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/942,472, mailed Oct. 18, 2023, 10 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/019267, mailed Aug. 3, 2023, 14 pages. [cited by applicant]
Williams, P., “Crossover Filter Shape Comparisons,” White Paper, Linea Research, Jul. 2013, 13 pages. [cited by applicant]
Corrected Notice of Allowability for U.S. Appl. No. 17/942,472, mailed Nov. 17, 2023, 6 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/939,350, mailed Jan. 17, 2024, 11 pages. [cited by applicant]
Hammi et al., “Temperature Compensated Digital Predistorter for 3G Power Amplifiers,” Electronics, Circuit and Systems, 2005, Dec. 11, 2005, pp. 1-4. [cited by applicant]
Hao et al., “Hybrid Analog/Digital Linearization Based on Dual-Domain Decomposition of Nonlinearity,” 2019 IEEE Asia-Pacific Microwave Conference, Dec. 10, 2019, pp. 156-158. [cited by applicant]
Lee et al., “Fully Automated Adaptive Analog Predistortion Power Amplifier in WCDMA Applications,” 2005 European Microwave Conference CNIT La Defense, Paris, France, vol. 2, Oct. 4, 2005, pp. 967-970. [cited by applicant]
Li et al., “Analog Predistorter Averaged Digital Predistortion for Power Amplifiers in Hybrid Beam-Forming Multi-Input Multi-Output Transmitter,” IEEE Access, vol. 8, Aug. 1, 2020, p. 146145-146153. [cited by applicant]
Tome et al., “Hybrid Analog/Digital Linearizatio nof GaN HEMT-Based Power Amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 67, No. 1, Jan. 1, 2019, pp. 288-294. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/689,232, mailed Oct. 21, 2024, 10 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/714,244, mailed Sep. 16, 2024, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/939,350, mailed Sep. 6, 2024, 8 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/890,538, mailed Oct. 21, 2024, 13 pages. [cited by applicant]
Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 17/700,826, mailed Sep. 11, 2024, 10 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/060803, mailed May 19, 2023, 13 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/060804, mailed May 4, 2023, 19 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/025512, mailed Sep. 28, 2023, 13 pages. [cited by applicant]
Paek, J.-S. et al., “Design of Boosted Supply Modulator With Reverse Current Protection for Wide Battery Range in Envelope Tracking Operation,” IEEE Transactions on Microwave Theory and Techniques, vol. 67, No. 1, Jan. … [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/700,685, mailed Dec. 22, 2023, 24 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/689,232, mailed Dec. 11, 2023, 27 pages. [cited by applicant]
Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 17/737,300, mailed Dec. 19, 2023, 12 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/700,700, mailed Oct. 23, 2023, 9 pages. [cited by applicant]
Supplemental Notice of Allowability for U.S. Appl. No. 17/700,700, mailed Nov. 8, 2023, 5 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 23174010.1, mailed Oct. 10, 2023, 10 pages. [cited by applicant]
Corrected Notice of Allowability for U.S. Appl. No. 17/737,300, mailed Dec. 27, 2023, 8 pages. [cited by applicant]
Advisory Action U.S. Appl. No. 17/689,232, mailed May 23, 2024, 3 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/689,232, mailed Jul. 17, 2024, 22 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 17/939,350, mailed May 21, 2024, 11 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/700,826, mailed May 15, 2024, 28 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/061734, mailed May 30, 2023, 15 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/061741, mailed Jun. 1, 2023, 14 pages. [cited by applicant]
Invitation to Pay Additional Fees and Partial International Search for International Patent Application No. PCT/US2023/061804, mailed May 26, 2023, 10 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/061804, mailed Jul. 17, 2023, 20 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 17/942,472, mailed Jul. 19, 2023, 16 pages. [cited by applicant]
Fu, J.-S. et al., “Improving Power Amplifier Efficiency and Linearity Using a Dynamically Controlled Tunable Matching Network,” IEEE Transactions on Microwave Theory and Techniques, vol. 56, No. 12, Dec. 2008, pp. 3239-… [cited by applicant]
Kim, S. et al., “A Tunable Power Amplifier Employing Digitally Controlled Accumulation-mode Varactor Array for 2.4-GHz Short-range Wireless Communication,” 2016 IEEE Asia Pacific Conference on Circuits and Systems (APCC… [cited by applicant]
Wang, T.-P., “A Fully Integrated W-Band Push-Push CMOS VCO With Low Phase Noise and Wide Tuning Range,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 58, No. 7, Jul. 2011, IEEE, pp. 1307-… [cited by applicant]
Wanner, R et al., “Monolithically Integrated SiGe Push-Push Oscillators in the Frequency Range 50-190 GHz,” 2006 IEEE Ninth International Symposium on Spread Spectrum Techniques and Applications, Aug. 28-31, 2006, Manau… [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2022/043600, mailed Jan. 11, 2023, 15 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/942,472, mailed Feb. 16, 2023, 13 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 22195382.1, mailed Feb. 1, 2023, 26 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 22195683.2, mailed Feb. 10, 2023, 12 pages. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/700,700, mailed Apr. 13, 2023, 11 pages. [cited by applicant]
Bai, W.-D. et al., “Principle of Vector Synthesis Predistortion Linearizers Controlling AM/AM and AM/PM Independently,” 2016 IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB), Oct. 16-19, 2016, Nanj… [cited by applicant]
Extended European Search Report for European Patent Application No. 22195695.6, mailed Feb. 14, 2023, 12 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 22196188.1, mailed Feb. 2, 2023, 25 pages. [cited by applicant]
International Search Report and Written Opinion for International Patent Application No. PCT/US2023/060303, mailed Apr. 11, 2023, 12 pages. [cited by applicant]
Cho, M., “Analog Predistortion for Improvement of RF Power Amplifier Efficiency and Linearity,” A Dissertation presented to the Academic Faculty in partial fulfillment of the requirements for the degree Doctor of Philos… [cited by applicant]
Kwak, T.-W. et al., “A 2W CMOS Hybrid Switching Amplitude Modulator for EDGE Polar Transmitters,” IEEE Journal of Solid-State Circuits, vol. 42, No. 12, Dec. 2007, IEEE, pp. 2666-2676. [cited by applicant]
Paek, J.-S. et al., “A -137 dBm/Hz Noise, 82% Efficiency AC-Coupled Hybrid Supply Modulator With Integrated Buck-Boost Converter,” IEEE Journal of Solid-State Circuits, vol. 51, No. 11, Nov. 2016, IEEE pp. 2757-2768. [cited by applicant]
Non-Final Office Action for U.S. Appl. No. 17/737,300, mailed Aug. 28, 2023, 14 pages. [cited by applicant]
Extended European Search Report for European Patent Application No. 23153108.8, mailed Jun. 20, 2023, 18 pages. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 17/700,685, mailed Apr. 5, 2024, 7 pages. [cited by applicant]
Final Office Action for U.S. Appl. No. 17/689,232, mailed Mar. 26, 2024, 28 pages. [cited by applicant]
Supplemental Notice of Allowability for U.S. Appl. No. 17/700,700, mailed Feb. 28, 2024, 5 pages. [cited by applicant]