Barrier layer for contact structures of semiconductor devices
The present disclosure describes a semiconductor device with a diffusion barrier layer on source/drain (S/D) contact structures and a method of fabricating the semiconductor device. The method of fabricating the semiconductor device includes forming a S/D region on a fin structure, forming a S/D contact structure including a metal on the S/D region, forming a barrier layer including silicon and the metal on the S/D contact structure, and forming a via contact structure on the barrier layer. The barrier layer blocks a diffusion of the metal in the S/D contact structure to the via contact structure.
1 . A method, comprising:
forming a source/drain (S/D) region on a fin structure;
forming, on the S/D region, a S/D contact structure comprising a first metal and a glue layer;
forming, on the S/D contact structure, a barrier layer that comprises silicon and the first metal, wherein the barrier layer is in physical contact with a sidewall surface of the glue layer; and
forming, on the barrier layer, a via contact structure comprising a second metal different from the first metal, wherein the barrier layer blocks a diffusion of the first metal in the S/D contact structure to the via contact structure.
2 . The method of claim 1 , wherein the forming the barrier layer comprises:
implanting a top portion of the S/D contact structure with silicon; and
annealing the S/D contact structure to form the barrier layer.
3 . The method of claim 1 , wherein the forming the barrier layer comprises:
treating the S/D contact structure with a silicon-containing gas; and
annealing the treated S/D contact structure to form the barrier layer.
4 . The method of claim 1 , wherein the forming the barrier layer comprises:
depositing a semiconductor layer comprising silicon on the S/D contact structure;
depositing an additional glue layer on the semiconductor layer;
depositing a cap layer on the additional glue layer; and
annealing the semiconductor layer and the S/D contact structure to form the barrier layer.
5 . The method of claim 4 , further comprising diffusing a dopant in the semiconductor layer into the barrier layer.
6 . The method of claim 4 , further comprising removing the cap layer, the additional glue layer, and the semiconductor layer.
7 . The method of claim 1 , wherein the forming the via contact structure comprises:
etching a portion of the barrier layer to form a concave top surface of the barrier layer; and
forming the via contact structure on the concave top surface.
8 . The method of claim 7 , wherein the forming the via contact structure further comprises:
implanting the concave top surface of the barrier layer with silicon; and
annealing the barrier layer implanted with silicon.
9 . The method of claim 1 , wherein the forming the via contact structure comprises:
depositing an etch stop layer on the barrier layer;
depositing an interlayer dielectric (ILD) layer on the etch stop layer;
etching the ILD layer and the etch stop layer over the barrier layer to form a first opening;
etching a portion of the barrier layer to form a second opening having a concave top surface, wherein the second opening is connected to the first opening and has a diameter greater than the first opening; and
forming the via contact structure in the first and second openings.
10 . The method of claim 1 , wherein the forming the via contact structure comprises:
depositing an etch stop layer on the barrier layer;
depositing an interlayer dielectric (ILD) layer on the etch stop layer;
etching the ILD layer and the etch stop layer over the barrier layer to form an opening; and
forming the via contact structure in the opening.
11 . A semiconductor device, comprising:
a source/drain (S/D) region on a fin structure;
a S/D contact structure on the S/D region, wherein the S/D contact structure comprises a metal and a glue layer;
a barrier layer on the S/D contact structure and in physical contact with a sidewall surface of the glue layer, wherein the barrier layer comprises silicon and the metal; and
a via contact structure on the barrier layer, wherein the barrier layer blocks a diffusion of the metal in the S/D contact structure to the via contact structure.
12 . The semiconductor device of claim 11 , wherein the barrier layer comprises a dopant.
13 . The semiconductor device of claim 11 , wherein the via contact structure comprises a first portion in the barrier layer and a second portion above the barrier layer, and wherein a diameter of the first portion is greater than that of the second portion.
14 . The semiconductor device of claim 11 , wherein the via contact structure comprises an additional metal different from the metal in the S/D contact structure.
15 . The semiconductor device of claim 11 , wherein the barrier layer comprises cobalt monosilicide and cobalt disilicide, and wherein a concentration of the cobalt monosilicide is greater than that of the cobalt disilicide.
16 . A semiconductor device, comprising:
a source/drain (S/D) region on a fin structure;
a S/D contact structure on the S/D region, wherein the S/D contact structure comprises a metal and a glue layer;
a barrier layer on the S/D contact structure and comprising silicon and the metal, wherein top surfaces of the glue layer and the barrier layer are coplanar;
a dielectric layer on the top surfaces of the glue layer and barrier layer; and
a via contact structure extending through the dielectric layer and in contact with the barrier layer, wherein the barrier layer blocks a diffusion of the metal in the S/D contact structure to the via contact structure.
17 . The semiconductor device of claim 16 , wherein the barrier layer comprises a dopant.
18 . The semiconductor device of claim 16 , wherein the via contact structure comprises a first portion in the barrier layer and a second portion in the dielectric layer, and wherein a diameter of the first portion is greater than that of the second portion.
19 . The semiconductor device of claim 16 , wherein the via contact structure comprises an additional metal different from the metal in the S/D contact structure.
20 . The semiconductor device of claim 16 , wherein the barrier layer comprises cobalt monosilicide and cobalt disilicide, and wherein a concentration of the cobalt monosilicide is greater than that of the cobalt disilicide.