Interconnection structure and method of fabricating the same
An interconnection structure includes a first dielectric layer, a second dielectric layer, first wiring patterns, and a first conductive pattern. The first wiring patterns respectively include a first penetration part that extends into a surface of the first dielectric layer, a first intervention part on the first penetration part and in the second dielectric layer, and a first connection part on the first intervention part and in the second dielectric layer. A top surface of the first intervention part is at a same level as a top surface of the first conductive pattern relative to the surface of the first dielectric layer. An angle between a sidewall of the first connection part and the top surface of the first intervention part is greater than that between a sidewall of the first penetration part and a bottom surface of the first dielectric layer.
1 . An interconnection structure, comprising:
a first dielectric layer;
a second dielectric layer on a surface of the first dielectric layer;
a plurality of first wiring patterns; and
a first conductive pattern between the first wiring patterns,
wherein the first wiring patterns respectively comprise:
a first penetration part that extends into the surface of the first dielectric layer;
a first intervention part on the first penetration part and in the second dielectric layer; and
a first connection part on the first intervention part and in the second dielectric layer,
wherein a top surface of the first intervention part is at a same level as a top surface of the first conductive pattern relative to the surface of the first dielectric layer, and
wherein an angle between a sidewall of the first connection part and the top surface of the first intervention part is greater than an angle between a sidewall of the first penetration part and a bottom surface of the first dielectric layer.
2 . The interconnection structure of claim 1 , wherein a width of the first connection part is greater than a width at a top surface of the first penetration part.
3 . The interconnection structure of claim 2 , wherein the angle between the sidewall of the first connection part and the top surface of the first intervention part is about 90 degrees.
4 . The interconnection structure of claim 1 , wherein
a width of the first penetration part increases in a direction from a bottom surface of the first penetration part toward a top surface of the first penetration part, and
a width of the first connection part is substantially uniform from a top surface of the first connection part to a bottom surface of the first connection part.
5 . The interconnection structure of claim 1 , further comprising:
a third dielectric layer on a surface of the second dielectric layer;
a fourth dielectric layer on the third dielectric layer;
a plurality of second wiring patterns on the first wiring patterns; and
a third wiring pattern on the second wiring pattern,
wherein the second wiring patterns respectively comprise:
a second penetration part that extends into the surface of the second dielectric layer;
a second intervention part on the second penetration part and in the third dielectric layer; and
a second connection part on the second intervention part and in the third dielectric layer.
6 . The interconnection structure of claim 5 , further comprising a plurality of second conductive patterns, wherein:
the second conductive patterns are between the second wiring patterns;
top surfaces of the second conductive patterns are at a same level as a top surface of the second intervention part; and
the second conductive patterns do not overlap the first wiring patterns and/or the second wiring patterns.
7 . The interconnection structure of claim 1 , wherein the first dielectric layer and the second dielectric layer comprise a photo-imageable dielectric layer.
8 . The interconnection structure of claim 1 , wherein a distance between the top surface of the first conductive pattern and a top surface of the second dielectric layer is about 3 μm or less.
9 . The interconnection structure of claim 1 , wherein a distance between the top surface of the first conductive pattern and a top surface of the second dielectric layer is greater than a height of the first conductive pattern.
10 . An interconnection structure, comprising:
a first dielectric layer;
a second dielectric layer on a surface of the first dielectric layer;
a plurality of first wiring patterns; and
a plurality of first conductive patterns between the first wiring patterns,
wherein the first wiring patterns respectively comprise:
a first penetration part that extends into the surface of the first dielectric layer;
a first intervention part on the first penetration part and in the second dielectric layer; and
a first connection part on the first intervention part and in the second dielectric layer,
wherein a width at a top surface of the first penetration part is different from a width at a bottom surface of the first penetration part, and
wherein a width at a top surface of the first connection part is the same as a width at a bottom surface of the first connection part.
11 . The interconnection structure of claim 10 , wherein a top surface of the first intervention part is at a same level as top surfaces of the first conductive patterns relative to the surface of the first dielectric layer.
12 . The interconnection structure of claim 10 , wherein the first conductive patterns comprise copper.
13 . The interconnection structure of claim 10 , wherein an angle between a sidewall of the first connection part and a top surface of the first intervention part is greater than an angle between a sidewall of the first penetration part and a bottom surface of the first dielectric layer.
14 . The interconnection structure of claim 10 , further comprising:
a third dielectric layer on a surface of the second dielectric layer;
a plurality of second wiring patterns on the first wiring patterns; and
a second conductive pattern between the second wiring patterns,
wherein the second wiring patterns respectively comprise:
a second penetration part that extends int the surface of the second dielectric layer;
a second intervention part on the second penetration part and in the third dielectric layer; and
a second connection part on the second intervention part and in the third dielectric layer,
wherein a top surface of the second conductive pattern is at a same level as a top surface of the second intervention part, and
wherein a width of the second connection part is less than a width of the second intervention part and greater than a width at a top surface of the second penetration part.
15 . The interconnection structure of claim 14 , wherein an angle between a sidewall of the first intervention part and a bottom surface of the second dielectric layer is the same as an angle between a sidewall of the first connection part and the top surface of the first intervention part.
16 . The interconnection structure of claim 10 , wherein the first dielectric layer comprises a photo-imageable dielectric layer.
17 . The interconnection structure of claim 10 , wherein a distance between top surfaces of the first conductive patterns and a top surface of the second dielectric layer is about 3 μm or less.
18 . The interconnection structure of claim 10 , wherein:
the plurality of first conductive patterns are spaced apart and electrically isolated from the first wiring patterns, and
the first penetration part, the first intervention part, and the first connection part comprise a unitary structure free of boundaries therebetween.
19 . An interconnection structure, comprising:
a first dielectric layer;
a second dielectric layer on a surface of the first dielectric layer;
a third dielectric layer on the second dielectric layer;
a plurality of first wiring patterns;
a plurality of second wiring patterns on the first wiring patterns;
a plurality of first conductive patterns between the first wiring patterns; and
a plurality of second conductive patterns between the second wiring patterns,
wherein the first wiring patterns respectively comprise:
a first penetration part that extends into the surface of the first dielectric layer;
a first intervention part on the first penetration part and in the second dielectric layer; and
a first connection part on the first intervention part in the second dielectric layer,
wherein a top surface of the first intervention part is at a same level as top surfaces of the first conductive patterns relative to the surface of the first dielectric layer, and
wherein the first intervention part and the first connection part define a stepwise shape in which a sidewall of the first connection part extends from the top surface of the first intervention part to a top surface of the first connection part and in which a sidewall of the first intervention part is offset in a horizontal direction from the sidewall of the first connection part.
20 . The interconnection structure of claim 19 , wherein an angle between the sidewall of the first intervention part and a bottom surface of the second dielectric layer is the same as an angle between the sidewall of the first connection part and the top surface of the first intervention part.