Enhanced-shaped extension region(s) for gate-all-around (GAA) field effect transistor (FET) device, and related fabrication methods
Enhanced-shaped extension region for gate-all-around (GAA) field-effect transistor (FET) devices and related fabrication methods are disclosed. The GAA FET device includes an extension region of semiconductor material coupled from the respective channel to the source/drain region to facilitate forming a conductive channel between the source and the drain regions when the GAA FET device is activated. The area of the extension region between the source/drain regions and the channel forms a series resistance between source/drain regions and the channel. To reduce channel parasitic resistance, the extension region of the GAA FET device has an enhanced extension portion that has an extended height orthogonal to the channel direction. The extension region with its enhanced extension portion has reduced resistance as compared to an extension region not containing the enhanced extension portion, thus reducing channel parasitic resistance of the GAA FET device for improved performance.
1 . A gate-all-around (GAA) field effect transistor (FET) device, comprising:
a first electrode on a substrate;
a second electrode on the substrate;
a channel extending in a first direction between the first electrode and the second electrode, the channel having a first width in the first direction, the channel comprising:
one or more channel structures each having a first height in a second direction orthogonal to the first direction;
a gate surrounding the channel;
one or more first extension regions each extending from a channel structure of the one or more channel structures to the first electrode; and
the one or more first extension regions each comprising:
one or more first enhanced extension portions each having a second height in the second direction greater than the first height;
wherein:
the gate comprises one or more gate structures each having a third height in the second direction and each disposed adjacent to at least one channel structure of the one or more channel structures in the second direction; and
the gate further comprises:
one or more inner spacers each adjacent to a gate structure of the one or more gate structures and each having a fourth height directly adjacent to the gate structure that is less than the third height.
2 . The GAA FET device of claim 1 , further comprising:
one or more second extension regions each extending from a channel structure of the one or more channel structures to the second electrode; and
the one or more second extension regions each having the first height.
3 . The GAA FET device of claim 1 , further comprising:
one or more second extension regions each extending from a channel structure of the one or more channel structures to the second electrode; and
the one or more second extension regions each comprising:
one or more second enhanced extension portions each having the second height in the second direction greater than the first height.
4 . The GAA FET device of claim 3 , wherein each channel structure of the one or more channel structures, a first extension region of the one or more first extension regions between the channel structure and the first electrode, and a second extension region of the one or more second extension regions between the channel structure and the second electrode are a dumbbell-shaped structure.
5 . The GAA FET device of claim 1 , wherein the fourth height of an inner spacer of the one or more inner spacers tapers as the inner spacer extends away from its adjacent gate structure of the one or more gate structures.
6 . The GAA FET device of claim 1 , wherein the one or more channel structures each comprise a nanowire.
7 . The GAA FET device of claim 1 , wherein the one or more channel structures each comprise a nanoslab.
8 . The GAA FET device of claim 1 , wherein the channel comprises a plurality of channel structures stacked within the first width.
9 . The GAA FET device of claim 1 , wherein the first electrode comprises a source region and the second electrode comprises a drain region.
10 . The GAA FET device of claim 1 , wherein the first electrode comprises a drain region and the second electrode comprises a source region.
11 . The GAA FET device of claim 1 , wherein the channel comprises an N-type semiconductor material (N-type) channel.
12 . The GAA FET device of claim 11 , wherein the channel structure is under a tensile strain.
13 . The GAA FET device of claim 1 , wherein the channel comprises a P-type semiconductor material (P-type) channel.
14 . The GAA FET device of claim 13 , wherein the channel structure is under a compressive strain.
15 . The GAA FET device of claim 1 integrated into a device selected from the group consisting of: a set top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smart phone; a session initiation protocol (SIP) phone; a tablet; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; avionics systems; a drone; and a multicopter.
16 . A method of fabricating a gate-all-around (GAA) field effect transistor (FET) device, comprising:
forming a first electrode on a substrate;
forming a second electrode on the substrate;
forming a channel extending in a first direction between the first electrode and the second electrode, the channel having a first width in the first direction, the channel comprising one or more channel structures each having a first height in a second direction orthogonal to the first direction;
forming a gate surrounding the channel, wherein the gate comprises one or more gate structures each having a third height in the second direction and each disposed adjacent to at least one channel structure of the one or more channel structures in the second direction;
forming one or more inner spacers each adjacent to a gate structure of the one or more gate structures and each having a fourth height directly adjacent to the gate structure that is less than the third height; and
forming one or more first extension regions each extending from a channel structure of the one or more channel structures to the first electrode; and
the one or more first extension regions each comprising one or more first enhanced extension portions each having a second height in the second direction greater than the first height.
17 . The method of claim 16 , wherein:
forming the channel comprises:
forming one or more semiconductor material layers each having the second height in the second direction;
etching at least a portion of the one or more semiconductor material layers to the first height to form the one or more channel structures each having the first height; and
wherein the one or more extension regions comprise end portions of the one or more semiconductor layers having the second height in the second direction.
18 . The method of claim 17 , wherein a ratio of the second height to the first height is greater than 1.4.
19 . The method of claim 17 , wherein the first height is five (5) nanometers (nm) and the second height is eight (8) nm.
20 . The method of claim 16 , wherein forming the channel comprises:
forming a plurality of semiconductor material layers each of the first height in the second direction; and
forming a plurality of sacrificial layers interleaved with the plurality of semiconductor material layers each of a third height less than the first height in the second direction.
21 . The method of claim 20 , further comprising:
removing the plurality of sacrificial layers; and
forming a gate structure of one or more gate structures of the gate between each channel structure of the one or more channel structures in the second direction.
22 . The method of claim 16 , further comprising:
doping first portions of the first electrode to form the one or more first extension regions.
23 . The method of claim 16 , further comprising:
forming one or more second extension regions each extending from a channel structure of the one or more channel structures to the second electrode; and
the one or more second extension regions each having the first height.
24 . The method of claim 16 , further comprising:
forming one or more second extension regions each extending from a channel structure of the one or more channel structures to the second electrode; and
the one or more second extension regions each comprising:
one or more second enhanced extension portions each having the second height in the second direction greater than the first height.
25 . The method of claim 23 , wherein each channel structure of the one or more channel structures, a first extension region of the one or more first extension regions between the channel structure and the first electrode, and a second extension region of the one or more second extension regions between the channel structure and the second electrode are a dumbbell-shaped structure.
26 . A method of fabricating a gate-all-around (GAA) field effect transistor (FET) device, comprising:
forming a first electrode on a substrate;
forming a second electrode on the substrate;
forming a channel extending in a first direction between the first electrode and the second electrode, the channel having a first width in the first direction, the channel comprising one or more channel structures each having a first height in a second direction orthogonal to the first direction;
wherein forming the channel comprises:
forming a plurality of semiconductor material layers each of the first height in the second direction; and
forming a plurality of sacrificial layers interleaved with the plurality of semiconductor material layers each of a third height less than the first height in the second direction;
removing the plurality of sacrificial layers;
forming a gate surrounding the channel, wherein forming the gate comprises forming a gate structure of one or more gate structures of the gate between each channel structure of the one or more channel structures in the second direction; and
forming one or more first extension regions each extending from a channel structure of the one or more channel structures to the first electrode; and
the one or more first extension regions each comprising one or more first enhanced extension portions each having a second height in the second direction greater than the first height.