Resistivity-controlled dielectric materials for substrate supports with improved high temperature chucking
Substrate support assembly and methods of making such substrate support assemblies are provided. Substrate support assemblies include an electrostatic chuck body defining a substrate support surface, a support stem coupled with the electrostatic chuck body, and an electrode embedded within the electrostatic chuck body. Substrate support surfaces exhibit a resistivity of 1×10 8 Ω-cm to 1×10 11 Ω-cm at a temperature of greater than 650° C. Substrate support surfaces can include a composite ceramic material having a base dielectric material and a second dielectric material having an electrical resistivity at least about two times higher than an electrical resistivity of the base dielectric material at a temperature of greater than 650° C.
1 . A substrate support assembly comprising:
an electrostatic chuck body defining a substrate support surface;
a support stem coupled with the electrostatic chuck body; and
an electrode embedded within the electrostatic chuck body, wherein the substrate support surface comprises a composite ceramic material, the composite ceramic material comprising a second dielectric material dispersed in a base dielectric material, and the substrate support surface comprises a resistivity of 1×10 8 Ω-cm to 1×10 11 Ω-cm at a temperature of greater than 600° C.
2 . The substrate support assembly of claim 1 , wherein the substrate support surface comprises a resistivity of 1×10 8 Ω-cm to 1×10 11 Ω-cm at a temperature of greater than 650° C.
3 . The substrate support assembly of claim 1 , further comprising a heater embedded in the chuck body.
4 . A substrate support assembly comprising:
an electrostatic chuck body defining a substrate support surface;
a support stem coupled with the electrostatic chuck body; and
an electrode embedded within the electrostatic chuck body;
wherein the substrate support surface comprises a composite ceramic material, the composite ceramic material comprising a base dielectric material dispersed in a second dielectric material, wherein the second dielectric material comprises an electrical resistivity at least about two times higher than an electrical resistivity of the base dielectric material at a temperature of greater than 600° C.
5 . The substrate support assembly of claim 4 , wherein the composite ceramic material has a second dielectric material concentration at any given point along the substrate support or portion thereof that is greater than or about 50% of an average second dielectric material concentration.
6 . The substrate support assembly of claim 4 , wherein the base dielectric material comprises aluminum nitride and/or the second dielectric material comprises boron nitride.
7 . The substrate support assembly of claim 6 , wherein the boron nitride is polycrystalline boron nitride, pyrolytic boron nitride, amorphous boron nitride, stack of multiple sheets of boron nitride, or a combination thereof.
8 . The substrate support assembly of claim 4 , wherein the second dielectric material is present in the composite ceramic material in an amount of about 0.1 wt. % to about 30 wt. %, based upon the weight of the base dielectric material and the second dielectric material.