Reactive cleaning of substrate support

1. A method of cleaning a substrate support, the method comprising:

introducing a cleaning gas consisting essentially of oxygen into a processing chamber containing the substrate support;

applying a radio frequency (RF) power to a remote plasma source including a remote plasma source volume where a plasma is struck and that is in fluid communication with the processing chamber to establish a reactive etching plasma that generates free radicals of the cleaning gas in the processing chamber;

reacting carbon-containing deposits on the substrate support with free radicals of the cleaning gas to form a gaseous by-products phase; and

evacuating the gaseous by-products phase from the processing chamber.

2. The method of claim 1 , wherein the introducing of the cleaning gas comprises directing the cleaning gas through the remote plasma source.

3. The method of claim 1 , wherein the introducing of the cleaning gas comprises directing the cleaning gas directly into the processing chamber.

4. The method of claim 1 , wherein operating the remote plasma source comprises setting a bias power in a range of greater than or equal to 10 W to less than or equal to 250 W; setting a reflective power of less than 50% of the bias power; and setting a pressure in a range of 5 mTorr to less than or equal to 2 Torr.

5. The method of claim 1 , wherein the processing chamber is under a vacuum pressure.

6. The method of claim 4 , wherein the substrate support comprises a Johnsen-Rahbek-type bipolar electrostatic chuck.

7. The method of claim 1 , wherein the substrate support comprises a Johnsen-Rahbek-type bipolar electrostatic chuck and at least one electrode.

8. The method of claim 1 , further comprising setting a temperature of the substrate support in a range of greater than or equal to 100° C. to less than or equal to 600° C.

9. The method of claim 1 , further comprising monitoring measurements of a leakage current of the substrate support.

10. The method of claim 9 , wherein a duration of operating the remote plasma source is based on the measurements of the leakage current.

11. The method of claim 1 , further comprising striking the reactive etching plasma in the remote plasma source volume and not striking a plasma in the processing chamber.

12. A method of cleaning a substrate support, the method comprising:

setting a temperature of a bipolar electrostatic chuck of the substrate support in a range of greater than or equal to 100° C. to less than or equal to 600° C.;

introducing a cleaning gas consisting essentially of oxygen into a processing chamber containing the substrate support, the processing chamber being under vacuum pressure;

applying a radio frequency (RF) power to a remote plasma source having a remote plasma source volume where a plasma is struck and that is in fluid communication with the processing chamber to establish a reactive etching plasma that generates free radicals of the cleaning gas in the processing chamber;

reacting carbon-containing deposits on the bipolar electrostatic chuck of the substrate support with the free radicals of the cleaning gas to form a gaseous by-products phase; and

evacuating the gaseous by-products phase from the processing chamber.

13. The method of claim 12 , wherein operating the remote plasma source comprises: setting a bias power in a range of greater than or equal to 10 W to less than or equal to 250 W; setting a reflective power of less than 50% of the bias power; and setting a pressure in a range of 5 mTorr to less than or equal to 2 Torr.

14. The method of claim 13 , further comprising monitoring measurements of a leakage current of the bipolar electrostatic chuck.

15. The method of claim 13 , further comprising striking the reactive etching plasma in the remote plasma source volume and not generating a plasma in the processing chamber.

16. A non-transitory computer readable medium, including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:

setting a remote plasma source a bias power in a range of greater than or equal to 10 W to less than or equal to 250 W; a reflective power of less than 50% of the bias power; and a pressure in a range of less than or equal to 5 mTorr to less than or equal to 2 Torr;

setting a temperature of a bipolar electrostatic chuck in a range of greater than or equal to 100° C. to less than or equal to 600° C.;

introducing a cleaning gas consisting essentially of oxygen into the processing chamber;

applying a radio frequency (RF) power to the remote plasma source having a remote plasma source volume that is in fluid communication with the processing chamber to strike a plasma in the remote plasma source volume and to establish a reactive etching plasma that generates free radicals of the cleaning gas in the processing chamber; and

evacuating a gaseous by-products phase resulting from reacting carbon-containing deposits on the substrate support with the free radicals of the cleaning gas from the processing chamber.

17. The non-transitory computer readable medium of claim 16 , comprising the operation of setting a pressure of the processing chamber to a vacuum pressure.

18. The non-transitory computer readable medium of claim 16 , wherein the processing chamber performs an operation comprising monitoring measurements of a leakage current of the bipolar electrostatic chuck.

19. The non-transitory computer readable medium of claim 16 , wherein a duration of operating the remote plasma source is based on measurements of the leakage current of the electrostatic chuck.

20. The non-transitory computer readable medium of claim 16 , wherein the substrate support comprises a Johnsen-Rahbek-type bipolar electrostatic chuck.