IP Library › Granted Patent US 12,613,382
Granted Patent B2
US 12,613,382 · App. 18/358,790 · Granted Apr 28, 2026

Method of making semiconductor device including optical through via and method of using

Inventors: Yu-Hao Chen (Hsinchu, TW); Chung-Ming Weng (Hsinchu, TW); Tsung-Yuan Yu (Hsinchu, TW); Hui Yu Lee (Hsinchu, TW); Hung-Yi Kuo (Hsinchu, TW); Jui-Feng Kuan (Hsinchu, TW); Chien-Te Wu (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
G02B6/4206G02B6/12002G02B6/122G02B6/136G02B6/4214G02B6/43
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Quick Facts
Patent No.
US 12,613,382
App. No.
18/358,790
Granted
Apr 28, 2026
Kind
B2
Abstract

A method of making a semiconductor device includes defining an opening extending from a first side of a substrate to a second side of the substrate, wherein the first side of the substrate is opposite the second side of the substrate. The method further includes depositing a dielectric material into the opening, wherein the dielectric material has a first refractive index. The method further includes etching the dielectric material to define a core opening extending from the first side of the substrate to the second side of the substrate. The method further includes depositing a core material into the core opening, wherein the core material has a second refractive index different from the first refractive index, and the core material is optically transparent. The method further includes removing excess core material from a surface of the substrate.

Claims (35)

1 . A method of using a semiconductor device comprising:

receiving an optical signal in a waveguide on a first side of a substrate, wherein the substrate comprises a semiconductor material;

deflecting the optical signal into an optical through via (OTV) using a first beam deflector on the first side of the substrate, wherein the OTV extends through the substrate from the first side of the substrate to a second side of the substrate;

deflecting the optical signal on the second side of the substrate using a second beam deflector, wherein deflecting the optical signal into the OTV comprises controlling a deflection angle of the first beam deflector; and

detecting the optical signal using a photodetector (PD) on the second side of the substrate.

2 . The method of claim 1 , wherein the waveguide comprises:

a core configured to permit the optical signal to propagate; and

a cladding surrounding the core, wherein the cladding on the first side of the substrate is continuous through the OTV.

3 . The method of claim 1 , wherein controlling the deflection angle of the first beam deflector comprises applying a voltage to a control element attached to the first beam deflector.

4 . The method of claim 1 , wherein controlling the deflection angle of the first beam deflector comprises applying a voltage to a plurality of control elements attached to the first beam deflector.

5 . The method of claim 1 , wherein deflecting the optical signal into the OTV comprises using a curved surface of the first beam deflector.

6 . The method of claim 1 , wherein deflecting the optical signal on the second side of the substrate comprises controlling a deflection angle of the second beam deflector.

7 . The method of claim 6 , wherein controlling the deflection angle of the second beam deflector comprises applying a voltage to a control element attached to the second beam deflector.

8 . The method of claim 6 , wherein controlling the deflection angle of the second beam deflector comprises applying a voltage to a plurality of control elements attached to the second beam deflector.

9 . The method of claim 6 , wherein controlling the deflection angle of the second beam deflector comprises deflecting the optical signal along one of a plurality of waveguides.

10 . A method of using a semiconductor device comprising:

receiving an optical signal in a waveguide on a first side of a substrate, wherein the substrate comprises a semiconductor material;

propagating the optical signal through the substrate using an optical through via (OTV) extending through the substrate;

deflecting the optical signal using a beam deflector toward a photonic element on a second side of the substrate, wherein deflecting the optical signal comprises:

receiving at least one voltage signal; and

adjusting a deflection angle of the beam deflector in response to the at least one voltage signal having a first voltage.

11 . The method of claim 10 , wherein adjusting the deflection angle comprises adjusting a temperature of a portion of a surface of the beam deflector.

12 . The method of claim 10 , wherein adjusting the deflection angle comprises adjusting a temperature of an entire surface of the beam deflector.

13 . The method of claim 10 , wherein adjusting the deflection angle comprises receiving a plurality of voltage signals, the plurality of voltage signals includes the at least one voltage signal, each voltage signal is received at a corresponding control element of a plurality of control elements, and each of the plurality of control elements is attached to the beam deflector.

14 . The method of claim 10 , wherein adjusting the deflection angle comprises deflecting the optical signal along one of a plurality of waveguides.

15 . The method of claim 10 , wherein propagating the optical signal through the OTV comprises deflecting the optical signal into the OTV using a first side beam deflector.

16 . The method of claim 10 , wherein deflecting the optical signal comprises deflecting the optical signal using a convex surface of the beam deflector.

17 . The method of claim 10 , wherein deflecting the optical signal comprises deflecting the optical signal using a concave surface of the beam deflector.

18 . The method of claim 10 , further comprising detecting the optical signal using a photodetector (PD) on the second side of the substrate.

19 . A method of using a semiconductor device comprising:

receiving an optical signal in a waveguide on a first side of a substrate, wherein the substrate comprises a semiconductor material;

deflecting the optical signal into an optical through via (OTV) using a first beam deflector on the first side of the substrate, wherein the OTV extends through the substrate from the first side of the substrate to a second side of the substrate, wherein deflecting the optical signal into the OTV comprises:

controlling a first angle of deflection of the first beam deflector using a first control element; and

deflecting the optical signal on the second side of the substrate using a second beam deflector.

20 . The method of claim 19 , wherein deflecting the optical signal on the second side comprises controlling a second angle of deflection of the second beam deflector using a second control element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 10, 2023
From: CHEN, YU-HAO; WENG, CHUNG-MING; YU, TSUNG-YUAN; LEE, HUI YU; KUO, HUNG-YI; KUAN, JUI-FENG; WU, CHIEN-TE
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 064550/0211 →
Continuity (3)
Division 17377576 · Jul 16, 2021
Provisional Application 63192701 · May 25, 2021
Related Publication 20230384537A1 · Nov 30, 2023
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