Gate line driving circuit with top gate and bottom gate
A circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor has a first end and a second end. The second transistor has a first end and a second end, wherein the first end of the second transistor is coupled to the first end of the first transistor. The third transistor has a first end and a second end, wherein the second end of the third transistor is coupled to the second end of the second transistor. The fourth transistor has a first end coupled to the second end of the first transistor. The fourth transistor has a bottom gate and an oxide semiconductor layer, and the second transistor has a top gate and a silicon semiconductor layer.
1. A circuit, comprising:
a first transistor having a first end and a second end, wherein the second end of the first transistor is a gate;
a second transistor having a first end and a second end, wherein the first end of the second transistor is connected to the first end of the first transistor, and the second end of the second transistor is a gate;
a third transistor having a first end and a second end, wherein the second end of the third transistor is connected to the second end of the second transistor, and the second end of the third transistor is a gate; and
a fourth transistor having a first end connected to the second end of the first transistor;
wherein the fourth transistor has a bottom gate and an oxide semiconductor layer, and the second transistor has a top gate and a silicon semiconductor layer.
2. The circuit as claimed in claim 1 , further comprising a capacitor coupled to the second end of the first transistor.
3. The circuit as claimed in claim 1 , further comprising a fifth transistor having a first end coupled to the first end of the third transistor.
4. The circuit as claimed in claim 3 , wherein the fifth transistor has a silicon semiconductor layer.
5. The circuit as claimed in claim 1 , wherein the first transistor has a silicon semiconductor layer.
6. The circuit as claimed in claim 1 , wherein the third transistor has a silicon semiconductor layer.
7. The circuit as claimed in claim 1 , wherein the second transistor has a third end coupled to a first voltage source.
8. The circuit as claimed in claim 7 , wherein the first voltage source provides a low voltage value.
9. The circuit as claimed in claim 1 , wherein the first end of the third transistor is coupled to a second voltage source.
10. The circuit as claimed in claim 9 , wherein the second transistor has a third end coupled to a first voltage source, and the first voltage source is less than the second voltage source in voltage value.