Power Semiconductor Device Having Improved Transient Handling Without Field Insulating Layer
Power semiconductor devices are provided. In one example, a power semiconductor device includes a semiconductor structure. The power semiconductor device further includes a polysilicon gate layer on the semiconductor structure in an inactive region of the semiconductor device. The power semiconductor device further includes a gate insulating pattern between the polysilicon gate layer and the semiconductor structure, the gate insulating pattern having a thickness such that a distance between the semiconductor in the inactive region and the polysilicon gate layer through the gate insulating pattern is less than about 100 nm. The power semiconductor device further includes a shunt contact structure on semiconductor structure in the inactive region. A gate insulating electric field across the gate insulating pattern associated with a displacement current is less than about 8 MV/cm.
1 . A power semiconductor device, comprising:
a semiconductor structure;
a polysilicon gate layer on the semiconductor structure in an inactive region of the semiconductor device;
a gate insulating pattern between the polysilicon gate layer and the semiconductor structure, the gate insulating pattern having a thickness such that a distance between the semiconductor in the inactive region and the polysilicon gate layer through the gate insulating pattern is less than about 100 nm;
a shunt contact structure on semiconductor structure in the inactive region, the shunt contact structure providing a path for a displacement current from a drain contact to a source contact through the semiconductor structure in the inactive region; and
wherein a gate insulating electric field across the gate insulating pattern associated with the displacement current is less than about 8 MV/cm.
2 . The power semiconductor device of claim 1 , wherein there is no field insulating layer having a thickness of greater than about 100 nm between the polysilicon gate layer and the semiconductor structure in the inactive region of the semiconductor structure.
3 . The power semiconductor device of claim 1 , wherein the polysilicon gate layer is located in a region proximate the shunt contact structure such that the gate insulating electric field resulting from the displacement current is less than about 8 MV/cm.
4 . The power semiconductor device of claim 1 , further comprising a gate pad coupled to the polysilicon gate layer with at least one gate via, wherein the polysilicon gate layer has an area that is less than about 25% of an area of the gate pad.
5 . The power semiconductor device of claim 4 , wherein the power semiconductor device comprises a plurality of gate vias and a plurality of shunt contact structures, wherein the plurality of gate vias and the plurality of shunt contact structures are interdigitated.
6 . The power semiconductor device of claim 1 , further comprising an inter metal dielectric (IMD) layer between at least a portion of the gate pad and the semiconductor structure in the inactive region.
7 . The power semiconductor device of claim 6 , wherein the IMD layer directly contacts at least a portion of the gate pad and at least a portion of the semiconductor structure in the inactive region.
8 . The power semiconductor device of claim 1 , wherein a thickness of the gate insulating pattern between the polysilicon gate layer and the semiconductor structure in the inactive region is substantially the same as a thickness of a gate insulating pattern in an active region of the semiconductor device between a gate finger and the semiconductor structure.
9 . The power semiconductor device of claim 1 , wherein the device comprises a silicide in the inactive region contacting the gate insulating pattern.
10 . The power semiconductor device of claim 1 , further comprising a source bus coupled to the polysilicon gate layer, the gate insulating pattern comprising one or more holes, each hole comprising providing a conductive path for displacement current to the source bus through the polysilicon gate layer in the inactive region.
11 . The power semiconductor device of claim 1 , wherein the power semiconductor device comprises a multilayer gate pad metal structure on the polysilicon gate layer, the multilayer gate pad metal structure comprising:
a first gate metal layer coupled to the polysilicon gate layer;
a second gate metal layer at least partially overlapping the first gate metal layer;
an insulating layer between the first gate metal layer and the second gate metal layer; and
wherein an area of the polysilicon gate layer is less than an area of the second gate metal layer.
12 . The power semiconductor device of claim 1 , wherein a distance between the semiconductor structure in the inactive region and the polysilicon gate layer through the gate insulating pattern is less than about 50 nm.
13 . The power semiconductor device of claim 1 , wherein the semiconductor structure is a wide bandgap semiconductor structure.
14 . The power semiconductor device of claim 13 , wherein the wide bandgap semiconductor structure comprises silicon carbide.
15 . The power semiconductor device of claim 1 , wherein the power semiconductor device is a MOSFET.
16 . A power semiconductor device, comprising:
a semiconductor structure;
a polysilicon gate layer on the semiconductor structure in an inactive region of the power semiconductor device;
a gate pad coupled to the polysilicon gate layer;
an inter metal dielectric (IMD) layer between at least a portion of a gate pad and the semiconductor structure in the inactive region; and
wherein the IMD layer directly contacts at least a portion of the gate pad and at least a portion of the semiconductor structure in the inactive region.
17 . The power semiconductor device of claim 16 , further comprising a gate insulating pattern in the inactive region between the polysilicon gate layer and the semiconductor structure.
18 . The power semiconductor device of claim 17 , wherein a thickness of the gate insulating pattern between the polysilicon gate layer and the semiconductor structure in the inactive region is substantially the same as a thickness of a gate insulating pattern in an active region of the semiconductor device between a gate finger and the semiconductor structure.
19 . The power semiconductor device of claim 16 , wherein there is no field insulating layer having a thickness of greater than about 100 nm between the polysilicon gate layer and the semiconductor structure in the inactive region of the semiconductor structure.
20 .- 58 . (canceled)
59 . A power semiconductor device, comprising:
a semiconductor structure;
a polysilicon gate layer;
a gate insulating pattern between the polysilicon gate layer and the semiconductor structure;
a shunt contact structure, the shunt contact structure providing a path for a displacement current from a drain contact to a source contact; and
wherein there is no field insulating layer having a thickness of greater than 100 nm between the polysilicon gate layer and the semiconductor structure.
60 .- 64 . (canceled)