Patent Assignment
Reel/Frame 072989/0088
Release of Security Interest in Intellectual Property Collateral at Reel/Frame No. 69180/0437
Recorded: 2025-09-30
Pages: 18
Assignor
U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Executed: 2025-09-29
Assignee
WOLFSPEED, INC.
4600 SILICON DRIVE, DURHAM, NORTH CAROLINA, 27703
Covered Properties
(165)
Silicon Carbide Device with Single Metallization Process for Ohmic and Schottky Contacts
Application:
18/211,429 →
Publication:
US 2024/0421192
Silicon Carbide Semiconductor Devices with Superjunctions
Application:
18/213,500 →
Publication:
US 2024/0429272
Electronic Device Packages with Internal Moisture Barriers
Field Peak Reduction in Semiconductor Devices with Metal Corner Rounding
Application:
18/330,013 →
Publication:
US 2024/0413218
Improved Thermal and Electrical Conductivity Between Metal Contacts Utilizing Spring Pin Connectors
Low Contact Resistance in Semiconductor Devices with Implanted Regions
Application:
18/333,632 →
Publication:
US 2024/0421193
Rf Amplifier Devices and Methods of Manufacturing Including Modularized Designs with Flip Chip Interconnections and Integration into Packaging
Application:
18/334,466 →
Publication:
US 2023/0327624
Semiconductor Package
Application:
18/336,358 →
Publication:
US 2024/0421029
Die-Attach Fillet Height Reduction
Application:
18/336,376 →
Publication:
US 2024/0421044
Power Module
Integrated Resistors with Increased Sheet Resistance for Rf Applications and Methods of Fabricating the Same
Application:
18/337,657 →
Publication:
US 2024/0429230
Low Reverse Leakage Current Power Schottky Diodes Having Reduced Current Crowding at the Lower Blocking Junction Corners
Application:
18/340,418 →
Publication:
US 2024/0429323
Implantation for Isolated Channel Structures in Group III-Nitride Semiconductor Devices
Application:
18/340,471 →
Publication:
US 2024/0429314
Topside Cooling for Semiconductor Device
Application:
18/340,503 →
Publication:
US 2024/0429120
Power Package Configured with Additional Functionality
Application:
18/346,561 →
Publication:
US 2025/0014973
Methods and Systems for Matching Both Dynamic and Static Parameters in Dies, Discretes, and/or Modules and Methods and Systems Based on the Same
Application:
18/347,980 →
Publication:
US 2023/0361089
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Application:
18/355,683 →
Publication:
US 2023/0369486
Submounts with Stud Protrusions for Semiconductor Packages
Application:
18/358,616 →
Publication:
US 2025/0038055
Protection of Mesa Edges in Semiconductor Devices
Application:
18/370,995 →
Publication:
US 2025/0107169
Group Iii-Nitride High-Electron Mobility Transistors Configured with a Low Resistance Contact Layer for Source and/or Drain Contacts and Process for Implementing the Same
Application:
18/383,733 →
Publication:
US 2025/0142915
Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region
Application:
18/394,999 →
Publication:
US 2024/0128085
Device Having a Rate of Current Change Limiter and Process of Implementing the Same
Monolithic Bidirectional Jfet Switch
Application:
18/399,226 →
Publication:
US 2025/0220982
Silicon Carbide Based Semiconductor Devices with Ring-Shaped Channel Regions and/or Channel Regions That Extend in Multiple Directions in Plan View
Application:
18/403,068 →
Publication:
US 2025/0220995
Power Semiconductor Devices Including Shape-Memory Metallization
Application:
18/405,721 →
Publication:
US 2025/0226338
Electroless Deposition Process for Semiconductor Devices
Application:
18/410,443 →
Publication:
US 2025/0201565
Laser-Assisted Method for Parting Crystalline Material
Power Semiconductor Device Having Improved Transient Handling Without Field Insulating Layer
Application:
18/412,190 →
Publication:
US 2025/0234619
Thermal Management Enhancement of Electronic Components
Application:
18/417,295 →
Publication:
US 2025/0240867
Gate Trench Power Semiconductor Devices Having Deep Trench Shield Connection Patterns
Application:
18/417,348 →
Publication:
US 2025/0241040
Submounts with Stud Protrusions for Semiconductor Packages
Application:
18/419,128 →
Publication:
US 2025/0038056
Anti-Reflective Layer for Protecting an N-Polar Group III-Nitride Semiconductor Structure
Application:
18/422,617 →
Publication:
US 2025/0246428
Thermally Stable FinFET Device for High Temperature Operation
Application:
18/422,677 →
Publication:
US 2025/0248064
Sic Vjfet with Edge Termination for Dual Tilted Gate Implants
Application:
18/427,184 →
Publication:
US 2025/0248079
Vertical Power Devices Fabricated Using Implanted Methods
Optimization of Power Module Performance via Parasitic Mutual Coupling
Compact Power Module
Power Semiconductor Devices Including Integrated Polysilicon Devices
Application:
18/430,542 →
Publication:
US 2025/0254909
Power Semiconductor Devices with Stacked Layers
Application:
18/430,866 →
Publication:
US 2025/0254943
Edge Termination Using Implant Damage
Application:
18/431,115 →
Publication:
US 2025/0254934
Devices Implementing Selective Cap Layers and Processes for Implementing the Same
Application:
18/438,015 →
Publication:
US 2025/0261394
Layered Metallization in Power Semiconductor Packages
Application:
18/443,031 →
Publication:
US 2025/0266350
Semiconductor Wafer with Process Control Monitor Structures
Application:
18/443,886 →
Publication:
US 2025/0266304
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
Application:
18/449,458 →
Publication:
US 2025/0063800
Power Semiconductor Devices Having Gate Trenches with Asymmetrically Rounded Upper and Lower Trench Corners and/or Recessed Gate Electrodes and Methods of Fabricating Such Devices
Application:
18/453,414 →
Publication:
US 2025/0072044
Thermal Enhanced Power Semiconductor Package
Application:
18/456,782 →
Publication:
US 2024/0243106
Wide Bandgap Transistors with Gate-Source Field Plates
Application:
18/464,599 →
Publication:
US 2023/0420526
Semiconductor Transistors Having Minimum Gate-to-Source Voltage Clamp Circuits
Application:
18/466,031 →
Publication:
US 2023/0418319
Power Semiconductor Device with Balancing Shunt Structure
Application:
18/466,487 →
Publication:
US 2025/0089316
Corrosion Resistant Metal Structures for Wide Bandgap Semiconductor Devices
Application:
18/471,003 →
Publication:
US 2025/0098199
Buried Shield Structures for Power Semiconductor Devices Including Segmented Support Shield Structures for Reduced on-Resistance and Related Fabrication Methods
Application:
18/472,343 →
Publication:
US 2024/0234567
Power Semiconductor Device Having Shaped Trench Ends
Application:
18/475,298 →
Publication:
US 2025/0107124
Semiconductor Die Bonding
Application:
18/475,370 →
Publication:
US 2025/0105196
Power Silicon Carbide Based Semiconductor Devices with Selective Jfet Implants That Are Self-Aligned with the Well Regions and Methods of Making Such Devices
Application:
18/476,452 →
Publication:
US 2025/0113531
Gate Trench Power Semiconductor Devices Having Deep Support Shields and Methods of Fabricating Such Device
Application:
18/482,097 →
Publication:
US 2025/0120133
Gate Trench Power Semiconductor Devices Having Shaped Deep Support Shields That Reduce Cell Pitch and on-State Resistance
Application:
18/482,105 →
Publication:
US 2025/0120119
Multifunctional Adhesion Promoter for Semiconductor Device Packages
Application:
18/487,665 →
Publication:
US 2025/0122413
Direct Bonded Semiconductor Die Package
Application:
18/488,284 →
Publication:
US 2025/0125231
Gate Trench Power Semiconductor Devices Having Trench Shielding Regions and Support Shields That Extend to Different Depths
Application:
18/493,838 →
Publication:
US 2025/0142877
Gate Trench Power Semiconductor Devices Having Channels with Horizontal and Vertical Segments
Application:
18/495,085 →
Publication:
US 2025/0142868
Power Modules Having Encapsulation Stress and Strain Mitigating Configurations
Application:
18/501,858 →
Publication:
US 2025/0149395
Power Electronics Package Having Signal Connections for Multiple Power Devices
Application:
18/502,911 →
Publication:
US 2025/0149506
Power Semiconductor Device with Reduced Strain
Packaged Transistor with Channeled Die Attach Materials and Process of Implementing the Same
Application:
18/505,197 →
Publication:
US 2024/0079320
Split Support Shield Structures for Trenched Semiconductor Devices with Integrated Schottky Diodes
Application:
18/508,322 →
Publication:
US 2025/0159948
Gate Trench Power Semiconductor Devices with Deep Jfet Patterns
Application:
18/510,734 →
Publication:
US 2025/0169128
Enhanced Isolation for on-Chip Current Sensors
Application:
18/510,756 →
Publication:
US 2025/0169166
Mask Integration for Trenched Semiconductor Device Structures
Application:
18/514,038 →
Publication:
US 2025/0169105
Reversible Power Module and a Process of Implementing a Reversible Power Module
Application:
18/518,105 →
Publication:
US 2025/0167081
Group Iii-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the Same
Underfill for Large Area Attaches for Semiconductor Packages
Application:
18/524,126 →
Publication:
US 2025/0183119
Power Semiconductor Package
Application:
18/525,028 →
Publication:
US 2025/0183105
Multi-Gate Switch Field Effect Transistor
Application:
18/526,986 →
Publication:
US 2025/0185277
Package for Power Electronics
Substrates for Power Semiconductor Devices
Application:
18/537,427 →
Publication:
US 2025/0194190
Power Semiconductor Devices
Application:
18/537,435 →
Publication:
US 2025/0194191
Asymmetric Edge Termination
Application:
18/540,135 →
Publication:
US 2025/0203960
Engineered Interconnect Structures for Enhanced Bonding Strength
Application:
18/541,571 →
Publication:
US 2025/0201674
Group Iii-Nitride High-Electron Mobility Transistors Configured with a Low Resistance Contact Layer for Source and/or Drain Contacts and Process for Implementing the Same
Application:
18/545,517 →
Publication:
US 2025/0142918
Electroless Deposition Process for Semiconductor Devices
Application:
18/545,648 →
Publication:
US 2025/0201740
Silicon Carbide Power Devices Having Expanded Creepage Distances
Application:
18/581,339 →
Publication:
US 2025/0267893
Integrated Active Cooling in Power Packages
Application:
18/584,179 →
Publication:
US 2025/0273536
Device Package Having a Contactless Sensor and Process of Implementing the Same
Application:
18/586,142 →
Publication:
US 2025/0273528
Dc Link Snubber Device Configured for Connection to a Power Module and/or the Like and Processes of Implementing the Same
Application:
18/589,080 →
Publication:
US 2025/0274036
Two Component Chemical Mechanical Polishing
Grind Wheel Design for Low Edge-Roll Grinding
Additives for Grinding Semiconductor Workpieces
Application:
18/598,859 →
Publication:
US 2025/0285873
Mosfets with Implanted Charge Compensation Regions
Application:
18/598,866 →
Publication:
US 2024/0387620
Disc Grinding for Semiconductor Wafers on Polishing System
Application:
18/598,871 →
Publication:
US 2025/0282021
Vertical Jfet Semiconductor Devices with Avalanche Current Ballast Resistance
Application:
18/607,711 →
Publication:
US 2025/0293152
Semiconductor Devices Having Intrinsic Gate-to-Drain Capacitances That Are Only Partly in Series with a Gate Resistor
Application:
18/607,712 →
Publication:
US 2025/0294865
Gate Trench Power Semiconductor Devices Having Trench Shielding Regions and Methods of Forming the Same
Application:
18/610,394 →
Publication:
US 2025/0301699
Power Devices with Multiple Metal Layer Thicknesses
Application:
18/612,302 →
Publication:
US 2025/0300105
Power Devices with Barrier Metal Extension and Sealing
Application:
18/612,356 →
Publication:
US 2025/0300106
Cellular Wafer Structure
Application:
18/616,611 →
Publication:
US 2025/0311382
Power Module Implementing True and Partial Source Kelvin Interconnections for Enhancing Switching Performance and Process of Implementing the Same
Application:
18/618,823 →
Publication:
US 2025/0309113
Power Silicon Carbide Based Semiconductor Devices Having Super Junction Drift Regions and Methods of Forming Such Devices
Application:
18/623,114 →
Publication:
US 2025/0311318
Method of Uniform NiSi Deposition
Application:
18/627,134 →
Publication:
US 2025/0316486
Laser-Based Surface Processing for Semiconductor Workpiece
Fill-In Planarization System and Method
Patent:
12,362,237 →
Application:
18/628,231 →
Off Axis Laser-Based Surface Processing Operations for Semiconductor Wafers
Laser Edge Shaping for Semiconductor Wafers
Patent:
12,269,123 →
Application:
18/628,275 →
Gate Trench Power Semiconductor Devices Having Enhanced Avalanche Robustness and Methods of Forming Such Devices
Application:
18/633,618 →
Publication:
US 2025/0324680
Vertical Jfet Semiconductor Devices with Localized Avalanche Breakdown
Application:
18/633,687 →
Publication:
US 2025/0324679
Photoionization Detector
Application:
18/633,985 →
Publication:
US 2024/0345041
Power Transistor with Soft Recovery Body Diode
Application:
18/636,381 →
Publication:
US 2024/0266432
Method and System for Conditioning a Polishing Pad
Application:
18/643,511 →
Publication:
US 2025/0326085
Trench Gate Wide Bandgap Junction Field Effect Transistors with Termination Regions Having Planar Upper Surfaces
Application:
18/646,862 →
Publication:
US 2025/0338571
Gate Trench Power Semiconductor Devices Having Split Gate Electrodes
Application:
18/646,883 →
Publication:
US 2025/0338547
Methods and Systems for Component Analysis, Sorting, and Sequencing Based on Component Parameters and Devices Utilizing the Methods and Systems
Application:
18/649,479 →
Publication:
US 2024/0282645
Semiconductor Devices Having Metal Gate Runners with Asymmetric Outer Gate Runners, Unevenly-Spaced Inner Gate Runners and/or Spine-Rib Inner Gate Runners with Multiple Ribs
Application:
18/655,542 →
Publication:
US 2025/0343117
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Integration of Liner in Passivation Stack
Application:
18/656,059 →
Publication:
US 2025/0343091
Edge Termination for Power Semiconductor Devices and Related Fabrication Methods
Application:
18/660,332 →
Publication:
US 2024/0290832
Laser-Based Processing for Semiconductor Wafers
Patent:
12,315,729 →
Application:
18/661,994 →
Electrical Discharge Machining Processing for Semiconductor Workpiece
Workpiece Surface Processing System for Semiconductor Wafers
Application:
18/663,862 →
Publication:
US 2025/0357182
Polishing Pad Assembly for Electrochemical Mechanical Polishing
Application:
18/663,883 →
Publication:
US 2025/0353136
Ionic Slurry for Electrochemical Mechanical Polishing
Application:
18/663,911 →
Publication:
US 2025/0357131
Multi-Scale Autoencoders for Semiconductor Workpiece Understanding
Patent:
12,322,087 →
Application:
18/674,427 →
Treatments for Improving Fracture Strength for Semiconductor Workpiece
Application:
18/680,764 →
Publication:
US 2025/0372382
Power Discrete Package Having Symmetric Pinouts and Process of Implementing the Same
Application:
18/733,442 →
Publication:
US 2025/0372520
Surface Processing of Semiconductor Workpieces
Method and System to Measure Optical Characteristics of Light-Transmissive Materials
Application:
18/737,609 →
Publication:
US 2025/0379107
Trench Based Semiconductor Devices with Heterojunction Gate
Application:
18/738,646 →
Publication:
US 2025/0380467
Nondestructive Characterization for Crystalline Wafers
Trench Based Semiconductor Devices with Increased Planarity
Application:
18/742,626 →
Publication:
US 2025/0386569
Gate-Controlled Semiconductor Devices Having Temperature Compensated Gate Resistances
Application:
18/755,884 →
Publication:
US 2026/0006884
Fiducial Structure for Inspection of Semiconductor Workpieces
Application:
18/759,307 →
Publication:
US 2026/0002886
Multi-Channel Workpiece Inspection System
Application:
18/759,356 →
Publication:
US 2026/0002874
High Throughput High Dynamic Range (HDR) Microscopy
Application:
18/759,385 →
Publication:
US 2026/0004401
Large Diameter Silicon Carbide Wafers
Detecting Defects in Semiconductor Material
Application:
18/770,846 →
Publication:
US 2026/0016361
Semiconductor Devices with Drain-Source Avalanche Breakdown
Application:
18/772,731 →
Publication:
US 2026/0020295
Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods
Application:
18/775,934 →
Publication:
US 2024/0367348
Boules with Boule-Handling Carrier Processing Methods
Application:
18/778,375 →
Publication:
US 2026/0021609
High Speed, Efficient Sic Power Module
Application:
18/779,946 →
Publication:
US 2024/0380320
Gate Trench Power Semiconductor Devices Having Shallow Trench Shields and Deep Support Shields
Application:
18/780,825 →
Publication:
US 2026/0032951
Trench Based Semiconductor Devices with Conformal Salicide Thickness
Application:
18/781,526 →
Publication:
US 2026/0032984
Wide Bandgap Semiconductor Device with Sensor Element
Application:
18/782,116 →
Publication:
US 2024/0379667
Multilayer Printed Circuit Board with Filling Segment Structures
Application:
18/782,438 →
Publication:
US 2025/0040030
Gate Trench Power Semiconductor Devices Having Deep Channel Regions and Related Methods of Fabricating Same
Application:
18/788,395 →
Publication:
US 2026/0040613
Stabilizing GAN Training by Regulating Learning Rates in Semiconductor Workpiece Inspection Models
Application:
18/789,165 →
Publication:
US 2026/0038246
Solid-State Circuit Breaker Configured with at Least One Fail-Open Mechanism and Process of Implementing the Same
Application:
18/791,725 →
Publication:
US 2026/0039105
Power Semiconductor Devices Including Angled Gate Trenches
Application:
18/792,813 →
Publication:
US 2024/0395927
Power Module
Application:
18/793,141 →
Publication:
US 2024/0395677
Non-Continuous Pad Structure for Power Semiconductor Devices and Power Semiconductor Devices Including Non-Continuous Pad Structures
Application:
18/796,522 →
Publication:
US 2026/0047470
Shape Model Generation and Use for Semiconductor Workpiece
Application:
18/802,817 →
Publication:
US 2026/0050246
Power Semiconductor Devices and Methods of Forming the Same
Application:
18/804,575 →
Publication:
US 2026/0052738
Encapsulation Delamination Prevention Structures at Die Edge
Application:
18/806,895 →
Publication:
US 2026/0053057
Stress Relief Features for Localized Die Stress Relief
Application:
18/807,029 →
Publication:
US 2026/0052994
Trench Based Semiconductor Devices with Epitaxially Regrown Layers
Application:
18/810,026 →
Publication:
US 2026/0059812
Semiconductor Devices Having Inner Gate Runners with Non-Orthogonal Inner Segments
Application:
18/810,884 →
Publication:
US 2026/0059837
Sidewall Dopant Shielding Methods and Approaches for Trenched Semiconductor Device Structures
Application:
18/813,208 →
Publication:
US 2024/0413197
Power Semiconductor Device Package
Application:
18/816,797 →
Publication:
US 2026/0068693
Semiconductor Devices with Drain-Source Connection for Avalanche Breakdown
Application:
18/826,969 →
Publication:
US 2026/0075901
Large Dimension Silicon Carbide Single Crystalline Materials with Reduced Crystallographic Stress
Application:
18/828,024 →
Publication:
US 2025/0006491
Trenched Diode Having Enhanced Forward Voltage Drop to Reverse Leakage Current Tradeoff and Method of Forming Such Device
Application:
18/830,713 →
Publication:
US 2026/0075887
Power Semiconductor Devices Including Deep Shielding Regions
Application:
18/830,731 →
Publication:
US 2026/0075904
System to Reduce Induced Subsurface Damage in Separation of Semiconductor Workpieces
Application:
18/830,879 →
Publication:
US 2026/0070158
Power Semiconductor Device Package
Application:
18/882,003 →
Publication:
US 2026/0076252
Power Module
Patent:
1,081,603 →
Application:
29/949,395 →
Silicon Carbide Vapor Source Material for use in a Sublimation System for Growing Crystalline Silicon Carbide
Application:
63/689,291 →
Shaped Solid Silicon Carbide Vapor Source Material Structure for use in a Sublimation System for Growing Crystalline Silicon Carbide
Application:
63/689,294 →
Bulk Silicon Carbide Crystal Growth System with 3D-Printed Parts
Application:
63/689,298 →
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jun 6, 2023
From: OLOF TORNBLAD; JIA GUO; SCOTT SHEPPARD
To: WOLFSPEED, INC.
Reel/Frame 063870/0266 →
Assignment of Assignor's Interest
Jun 14, 2023
From: KOMPOSCH, ALEXANDER; WOO, ENG WAH; NOORI, BASIM
To: WOLFSPEED, INC.
Reel/Frame 063944/0644 →
Assignment of Assignor's Interest
Jun 19, 2023
From: OLDHAM, NEAL; POTERA, RAHUL R.
To: WOLFSPEED, INC.
Reel/Frame 064022/0463 →
Assignment of Assignor's Interest
Jun 20, 2023
From: KING, MATTHEW; HARDIMAN, CHRIS; BOTHE, KYLE; FISHER, JEREMY
To: WOLFSPEED, INC.
Reel/Frame 063995/0649 →
Assignment of Assignor's Interest
Jun 23, 2023
From: POTERA, RAHUL R.
To: WOLFSPEED, INC.
Reel/Frame 064044/0241 →
Assignment of Assignor's Interest
Jun 26, 2023
From: PARK, JAE-HYUNG; JI, IN-HWAN; LICHTENWALNER, DANIEL J.; VAN BRUNT, EDWARD ROBERT
To: WOLFSPEED, INC.
Reel/Frame 064052/0848 →
Change of Name
Jul 7, 2023
From: PUN, ARTHUR; NOORI, BASIM
To: WOLFSPEED, INC.
Reel/Frame 064545/0554 →
Assignment of Assignor's Interest
Jul 7, 2023
From: PUN, ARTHUR; NOORI, BASIM
To: CREE, INC.
Reel/Frame 064187/0557 →
Change of Name
Aug 8, 2023
From: AVISI TECHNOLOGIES, LLC
To: AVISI TECHNOLOGIES, INC.
Reel/Frame 064523/0729 →
Assignment of Assignor's Interest
Aug 9, 2023
From: WHEELER, PAUL; MCPHERSON, BRICE; SCHUPBACH, ROBERTO MARCELO; MONTOYA, LEONARDO
To: WOLFSPEED, INC.
Reel/Frame 064536/0171 →
Assignment of Assignor's Interest
Aug 28, 2023
From: KOMPOSCH, ALEXANDER; FENDER, JASON R.; PALSGAARD, ERIC JACOB; KROON, DOUGLAS JOHN
To: WOLFSPEED, INC.
Reel/Frame 064727/0728 →
Assignment of Assignor's Interest
Sep 2, 2023
From: BOTHE, KYLE; GUO, JIA; HALLIN, CHRISTER; SUVOROV, ALEXANDER V.
To: WOLFSPEED, INC.
Reel/Frame 064781/0559 →
Assignment of Assignor's Interest
Sep 2, 2023
From: SCHUETTE, MICHAEL LEE; LEE, KYOUNGKEUN JOSEPH; KING, MATTHEW R.; HALLIN, CHRISTER
To: WOLFSPEED, INC.
Reel/Frame 064781/0518 →
Assignment of Assignor's Interest
Sep 2, 2023
From: DADVAND, AFSHIN; BALARAMAN, DEVARAJAN
To: WOLFSPEED, INC.
Reel/Frame 064781/0513 →
Assignment of Assignor's Interest
Sep 2, 2023
From: BOTHE, KYLE; SCHUETTE, MICHAEL LEE; TWEEDIE, JAMES SCOTT; SHEPPARD, SCOTT
To: WOLFSPEED, INC.
Reel/Frame 064781/0531 →
Assignment of Assignor's Interest
Sep 2, 2023
From: MCPHERSON, BRICE; PASSMORE, BRANDON; SCHUPBACH, ROBERTO M.; STABACH-SMITH, JENNIFER
To: CREE FAYETTEVILLE, INC.
Reel/Frame 064781/0539 →
Assignment of Assignor's Interest
Sep 2, 2023
From: RICHTER, DANIEL GINN; DADVAND, AFSHIN
To: WOLFSPEED, INC.
Reel/Frame 064781/0549 →
Assignment of Assignor's Interest
Sep 2, 2023
From: BALARAMAN, DEVARAJAN; RICHTER, DANIEL GINN
To: WOLFSPEED, INC.
Reel/Frame 064781/0554 →
Assignment of Assignor's Interest
Sep 21, 2023
From: SAMPATH, MADANKUMAR; POTERA, RAHUL R.
To: WOLFSPEED, INC.
Reel/Frame 064981/0042 →
Merger
Sep 22, 2023
From: CREE FAYETTEVILLE, INC.
To: CREE, INC.
Reel/Frame 064996/0909 →
Change of Name
Sep 26, 2023
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 065028/0262 →
Assignment of Assignor's Interest
Oct 27, 2023
From: KING, MATTHEW; TWEEDIE, JAMES; BOTHE, KYLE; SHEPPARD, SCOTT
To: WOLFSPEED, INC.
Reel/Frame 065366/0723 →
Assignment of Assignor's Interest
Dec 28, 2023
From: POTERA, RAHUL R.; KANALE, AJIT
To: WOLFSPEED, INC.
Reel/Frame 065974/0734 →
Assignment of Assignor's Interest
Feb 6, 2024
From: SHAO, JIANWEN; KANALE, AJIT; BHUVANESH, PRASANNA OBALA
To: WOLFSPEED, INC.
Reel/Frame 066389/0257 →
Assignment of Assignor's Interest
Jun 13, 2024
From: DONOFRIO, MATTHEW; EDMOND, JOHN; KONG, HUA-SHUANG; BALKAS, ELIF
To: CREE, INC.
Reel/Frame 067720/0719 →