Power Semiconductor Device Having Shaped Trench Ends
Semiconductor devices are provided. In one example, a semiconductor device includes a semiconductor structure. The semiconductor device includes a gate finger in a gate trench in the semiconductor structure. The gate trench extends a length in the semiconductor structure. The gate trench has a first portion having a first width and a second portion having a second width. The second width is different than the first width.
1 . A semiconductor device, comprising:
a semiconductor structure;
a gate finger in a gate trench in the semiconductor structure; and
wherein the gate trench extends a length in the semiconductor structure, the gate trench having a first portion having a first width and a second portion having a second width, wherein the second width is different than the first width.
2 . The semiconductor device of claim 1 , wherein the second width is greater than the first width.
3 . The semiconductor device of claim 1 , wherein the second width is less than the first width.
4 . The semiconductor device of claim 1 , wherein the second portion has a different shape relative to the first portion.
5 . The semiconductor device of claim 1 , wherein the first portion has a first length, the second portion has a second length, wherein the first length is at least 10 times greater than the second length.
6 . The semiconductor device of claim 1 , wherein the second portion of the gate trench is contiguous with an adjacent gate trench.
7 . The semiconductor device of claim 1 , wherein the semiconductor device further comprises a gate bus, wherein the gate bus overlaps at least a portion of the gate finger in the second portion of the gate trench.
8 . The semiconductor device of claim 7 , wherein the gate finger and the gate bus extend in different directions.
9 . The semiconductor device of claim 7 , further comprising a field insulating layer between the gate bus and the semiconductor structure.
10 . The semiconductor device of claim 9 , wherein the field insulating layer has a thickness in a range of about 0.3 microns to about to about 0.5 microns.
11 . The semiconductor device of claim 10 , further comprising a gate oxide layer between the field insulating layer and the gate bus.
12 . The semiconductor device of claim 11 , wherein the gate oxide layer has a thickness of about 50 nm to about 100 nm.
13 . (canceled)
14 . The semiconductor device of claim 9 , wherein the field insulating layer is in the second portion of the gate trench.
15 . The semiconductor device of claim 14 , wherein the field insulating layer has a first thickness on a bottom surface of the gate trench and a second thickness on a sidewall of the gate trench, the first thickness being different than the second thickness.
16 .- 19 . (canceled)
20 . The semiconductor device of claim 9 , wherein the field insulating layer has a sloped surface profile extending along the length of the gate trench in the second portion.
21 . The semiconductor device of claim 1 , wherein the semiconductor structure is a wide bandgap semiconductor structure.
22 . (canceled)
23 . The semiconductor device of claim 21 , wherein the wide bandgap semiconductor structure comprises silicon carbide.
24 . The semiconductor device of claim 1 , wherein the semiconductor device is a MOSFET.
25 . A semiconductor device, comprising:
a semiconductor structure comprising an active region and an inactive region;
a gate bus on the inactive region;
a gate trench having a first portion in the active region and a second portion in the inactive region;
a gate finger extending in the active region in the first portion of the gate trench; and
a field insulating layer on the inactive region and in the second portion of the gate trench.
26 .- 40 . (canceled)
41 . A semiconductor device, comprising:
a wide bandgap semiconductor structure having an active region and an inactive region, the active region having one or more unit cell structures;
a gate bus;
a gate trench in the wide bandgap semiconductor structure, the gate trench having a first portion and a second portion;
a gate finger in the gate trench;
a field insulating layer in the second portion of the gate trench;
wherein the gate finger overlaps the gate bus at the second portion of the gate trench; and
wherein the first portion of the gate trench has a first width and the second portion of the gate trench has a second width, wherein the second width is different than the first width.
42 .- 60 . (canceled)