Patent Assignment
Reel/Frame 069180/0437
Security Interest
Recorded: 2024-10-17
Pages: 20
Assignor
WOLFSPEED, INC.
Executed: 2024-10-11
Assignee
U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
214 N. TRYON ST., 27TH FLOOR, CHARLOTTE, NORTH CAROLINA, 28202
Covered Properties
(167)
Field Peak Reduction in Semiconductor Devices with Metal Corner Rounding
Improved Thermal and Electrical Conductivity Between Metal Contacts Utilizing Spring Pin Connectors
Low Contact Resistance in Semiconductor Devices with Implanted Regions
Application:
18/333,632 →
Publication:
US US20240421193A1
Rf Amplifier Devices and Methods of Manufacturing Including Modularized Designs with Flip Chip Interconnections and Integration into Packaging
Power Module
Die-Attach Fillet Height Reduction
Application:
18/336,376 →
Publication:
US US20240421044A1
Semiconductor Package
Application:
18/336,358 →
Publication:
US US20240421029A1
Silicon Carbide Device with Single Metallization Process for Ohmic and Schottky Contacts
Application:
18/211,429 →
Publication:
US US20240421192A1
Integrated Resistors with Increased Sheet Resistance for Rf Applications and Methods of Fabricating the Same
Application:
18/337,657 →
Publication:
US US20240429230A1
Low Reverse Leakage Current Power Schottky Diodes Having Reduced Current Crowding at the Lower Blocking Junction Corners
Application:
18/340,418 →
Publication:
US US20240429323A1
Topside Cooling for Semiconductor Device
Application:
18/340,503 →
Publication:
US US20240429120A1
Implantation for Isolated Channel Structures in Group III-Nitride Semiconductor Devices
Application:
18/340,471 →
Publication:
US US20240429314A1
Silicon Carbide Semiconductor Devices with Superjunctions
Application:
18/213,500 →
Publication:
US US20240429272A1
Power Package Configured with Additional Functionality
Application:
18/346,561 →
Publication:
US US20250014973A1
Methods and Systems for Matching Both Dynamic and Static Parameters in Dies, Discretes, and/or Modules and Methods and Systems Based on the Same
Application:
18/347,980 →
Publication:
US US20230361089A1
Electronic Device Packages with Internal Moisture Barriers
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Application:
18/355,683 →
Publication:
US US20230369486A1
Submounts with Stud Protrusions for Semiconductor Packages
Application:
18/358,616 →
Publication:
US US20250038055A1
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
Application:
18/449,458 →
Publication:
US US20250063800A1
Power Semiconductor Devices Having Gate Trenches with Asymmetrically Rounded Upper and Lower Trench Corners and/or Recessed Gate Electrodes and Methods of Fabricating Such Devices
Application:
18/453,414 →
Publication:
US US20250072044A1
Thermal Enhanced Power Semiconductor Package
Application:
18/456,782 →
Publication:
US US20240243106A1
Wide Bandgap Transistors with Gate-Source Field Plates
Application:
18/464,599 →
Publication:
US US20230420526A1
Semiconductor Transistors Having Minimum Gate-to-Source Voltage Clamp Circuits
Application:
18/466,031 →
Publication:
US US20230418319A1
Power Semiconductor Device with Balancing Shunt Structure
Application:
18/466,487 →
Publication:
US US20250089316A1
Corrosion Resistant Metal Structures for Wide Bandgap Semiconductor Devices
Application:
18/471,003 →
Publication:
US US20250098199A1
Protection of Mesa Edges in Semiconductor Devices
Application:
18/370,995 →
Publication:
US US20250107169A1
Buried Shield Structures for Power Semiconductor Devices Including Segmented Support Shield Structures for Reduced on-Resistance and Related Fabrication Methods
Application:
18/472,343 →
Publication:
US US20240234567A1
Power Semiconductor Device Having Shaped Trench Ends
Application:
18/475,298 →
Publication:
US US20250107124A1
Semiconductor Die Bonding Including Die-Attach Layer Comprising Au, Sn, and Co
Application:
18/475,370 →
Publication:
US US20250105196A1
Power Silicon Carbide Based Semiconductor Devices with Selective Jfet Implants That Are Self-Aligned with the Well Regions and Methods of Making Such Devices
Application:
18/476,452 →
Publication:
US US20250113531A1
Gate Trench Power Semiconductor Devices Having Deep Support Shields and Methods of Fabricating Such Device
Application:
18/482,097 →
Publication:
US US20250120133A1
Gate Trench Power Semiconductor Devices Having Shaped Deep Support Shields That Reduce Cell Pitch and on-State Resistance
Application:
18/482,105 →
Publication:
US US20250120119A1
Multifunctional Adhesion Promoter for Semiconductor Device Packages
Application:
18/487,665 →
Publication:
US US20250122413A1
Direct Bonded Semiconductor Die Package
Application:
18/488,284 →
Publication:
US US20250125231A1
Group Iii-Nitride High-Electron Mobility Transistors Configured with a Low Resistance Contact Layer for Source and/or Drain Contacts and Process for Implementing the Same
Application:
18/383,733 →
Publication:
US US20250142915A1
Gate Trench Power Semiconductor Devices Having Trench Shielding Regions and Support Shields That Extend to Different Depths
Application:
18/493,838 →
Publication:
US US20250142877A1
Gate Trench Power Semiconductor Devices Having Channels with Horizontal and Vertical Segments
Application:
18/495,085 →
Publication:
US US20250142868A1
Power Modules Having Encapsulation Stress and Strain Mitigating Configurations
Application:
18/501,858 →
Publication:
US US20250149395A1
Power Electronics Package Having Signal Connections for Multiple Power Devices
Application:
18/502,911 →
Publication:
US US20250149506A1
Power Semiconductor Device with Reduced Strain
Packaged Transistor with Channeled Die Attach Materials and Process of Implementing the Same
Application:
18/505,197 →
Publication:
US US20240079320A1
Split Support Shield Structures for Trenched Semiconductor Devices with Integrated Schottky Diodes
Application:
18/508,322 →
Publication:
US US20250159948A1
Enhanced Isolation for on-Chip Current Sensors
Application:
18/510,756 →
Publication:
US US20250169166A1
Gate Trench Power Semiconductor Devices with Deep Jfet Patterns
Application:
18/510,734 →
Publication:
US US20250169128A1
Mask Integration for Trenched Semiconductor Device Structures
Application:
18/514,038 →
Publication:
US US20250169105A1
Reversible Power Module and a Process of Implementing a Reversible Power Module
Application:
18/518,105 →
Publication:
US US20250167081A1
Group Iii-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the Same
Underfill for Large Area Attaches for Semiconductor Packages
Application:
18/524,126 →
Publication:
US US20250183119A1
Power Semiconductor Package
Application:
18/525,028 →
Publication:
US US20250183105A1
Multi-Gate Switch Field Effect Transistor
Application:
18/526,986 →
Publication:
US US20250185277A1
Package for Power Electronics
Substrates for Power Semiconductor Devices
Application:
18/537,427 →
Publication:
US US20250194190A1
Power Semiconductor Devices
Application:
18/537,435 →
Publication:
US US20250194191A1
Asymmetric Edge Termination
Application:
18/540,135 →
Publication:
US US20250203960A1
Engineered Interconnect Structures for Enhanced Bonding Strength
Application:
18/541,571 →
Publication:
US US20250201674A1
Group Iii-Nitride High-Electron Mobility Transistors Configured with a Low Resistance Contact Layer for Source and/or Drain Contacts and Process for Implementing the Same
Application:
18/545,517 →
Publication:
US US20250142918A1
Electroless Deposition Process for Semiconductor Devices
Application:
18/545,648 →
Publication:
US US20250201740A1
Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region
Application:
18/394,999 →
Publication:
US US20240128085A1
Device Having a Rate of Current Change Limiter and Process of Implementing the Same
Monolithic Bidirectional Jfet Switch
Application:
18/399,226 →
Publication:
US US20250220982A1
Silicon Carbide Based Semiconductor Devices with Ring-Shaped Channel Regions and/or Channel Regions That Extend in Multiple Directions in Plan View
Application:
18/403,068 →
Publication:
US US20250220995A1
Power Semiconductor Devices Including Shape-Memory Metallization
Application:
18/405,721 →
Publication:
US US20250226338A1
Electroless Deposition Process for Semiconductor Devices
Application:
18/410,443 →
Publication:
US US20250201565A1
Laser-Assisted Method for Parting Crystalline Material
Power Semiconductor Device Having Improved Transient Handling Without Field Insulating Layer
Application:
18/412,190 →
Publication:
US US20250234619A1
Gate Trench Power Semiconductor Devices Having Deep Trench Shield Connection Patterns
Application:
18/417,348 →
Publication:
US US20250241040A1
Thermal Management Enhancement of Electronic Components
Application:
18/417,295 →
Publication:
US US20250240867A1
Submounts with Stud Protrusions for Semiconductor Packages
Application:
18/419,128 →
Publication:
US US20250038056A1
Anti-Reflective Layer for Protecting an N-Polar Group III-Nitride Semiconductor Structure
Application:
18/422,617 →
Publication:
US US20250246428A1
Thermally Stable FinFET Device for High Temperature Operation
Application:
18/422,677 →
Publication:
US US20250248064A1
Sic Vjfet with Edge Termination for Dual Tilted Gate Implants
Application:
18/427,184 →
Publication:
US US20250248079A1
Vertical Power Devices Fabricated Using Implanted Methods
Optimization of Power Module Performance via Parasitic Mutual Coupling
Compact Power Module
Power Semiconductor Devices Including Integrated Polysilicon Devices
Application:
18/430,542 →
Publication:
US US20250254909A1
Edge Termination Using Implant Damage
Application:
18/431,115 →
Publication:
US US20250254934A1
Power Semiconductor Devices with Stacked Layers
Application:
18/430,866 →
Publication:
US US20250254943A1
Devices Implementing Selective Cap Layers and Processes for Implementing the Same
Application:
18/438,015 →
Publication:
US US20250261394A1
Layered Metallization in Power Semiconductor Packages
Application:
18/443,031 →
Publication:
US US20250266350A1
Semiconductor Wafer with Process Control Monitor Structures
Application:
18/443,886 →
Publication:
US US20250266304A1
Silicon Carbide Power Devices Having Expanded Creepage Distances
Application:
18/581,339 →
Publication:
US US20250267893A1
Integrated Active Cooling in Power Packages
Application:
18/584,179 →
Publication:
US US20250273536A1
Device Package Having a Contactless Sensor and Process of Implementing the Same
Application:
18/586,142 →
Publication:
US US20250273528A1
Dc Link Snubber Device Configured for Connection to a Power Module and/or the Like and Processes of Implementing the Same
Application:
18/589,080 →
Publication:
US US20250274036A1
Mosfets with Implanted Charge Compensation Regions
Application:
18/598,866 →
Publication:
US US20240387620A1
Grind Wheel Design for Low Edge-Roll Grinding
Additives for Grinding Semiconductor Workpieces
Disc Grinding for Semiconductor Wafers on Polishing System
Application:
18/598,871 →
Publication:
US US20250282021A1
Two Component Chemical Mechanical Polishing
Semiconductor Devices Having Intrinsic Gate-to-Drain Capacitances That Are Only Partly in Series with a Gate Resistor
Application:
18/607,712 →
Publication:
US US20250294865A1
Vertical Jfet Semiconductor Devices with Avalanche Current Ballast Resistance
Application:
18/607,711 →
Publication:
US US20250293152A1
Gate Trench Power Semiconductor Devices Having Trench Shielding Regions and Methods of Forming the Same
Application:
18/610,394 →
Publication:
US US20250301699A1
Power Devices with Multiple Metal Layer Thicknesses
Application:
18/612,302 →
Publication:
US US20250300105A1
Power Devices with Barrier Metal Extension and Sealing
Application:
18/612,356 →
Publication:
US US20250300106A1
Cellular Wafer Structure
Application:
18/616,611 →
Publication:
US US20250311382A1
Power Module Implementing True and Partial Source Kelvin Interconnections for Enhancing Switching Performance and Process of Implementing the Same
Application:
18/618,823 →
Publication:
US US20250309113A1
Power Silicon Carbide Based Semiconductor Devices Having Super Junction Drift Regions and Methods of Forming Such Devices
Application:
18/623,114 →
Publication:
US US20250311318A1
Method of Uniform NiSi Deposition
Application:
18/627,134 →
Publication:
US US20250316486A1
Laser-Based Surface Processing for Semiconductor Workpiece
Fill-In Planarization System and Method
Patent:
12,362,237 →
Application:
18/628,231 →
Off Axis Laser-Based Surface Processing Operations for Semiconductor Wafers
Laser Edge Shaping for Semiconductor Wafers
Patent:
12,269,123 →
Application:
18/628,275 →
Vertical Jfet Semiconductor Devices with Localized Avalanche Breakdown
Application:
18/633,687 →
Publication:
US US20250324679A1
Gate Trench Power Semiconductor Devices Having Enhanced Avalanche Robustness and Methods of Forming Such Devices
Application:
18/633,618 →
Publication:
US US20250324680A1
Power Transistor with Soft Recovery Body Diode
Application:
18/636,381 →
Publication:
US US20240266432A1
Method and System for Conditioning a Polishing Pad
Application:
18/643,511 →
Publication:
US US20250326085A1
Gate Trench Power Semiconductor Devices Having Split Gate Electrodes
Application:
18/646,883 →
Publication:
US US20250338547A1
Trench Gate Wide Bandgap Junction Field Effect Transistors with Termination Regions Having Planar Upper Surfaces
Application:
18/646,862 →
Publication:
US US20250338571A1
Methods and Systems for Component Analysis, Sorting, and Sequencing Based on Component Parameters and Devices Utilizing the Methods and Systems
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Integration of Liner in Passivation Stack
Application:
18/656,059 →
Publication:
US US20250343091A1
Semiconductor Devices Having Metal Gate Runners with Asymmetric Outer Gate Runners, Unevenly-Spaced Inner Gate Runners and/or Spine-Rib Inner Gate Runners with Multiple Ribs
Application:
18/655,542 →
Publication:
US US20250343117A1
Edge Termination for Power Semiconductor Devices and Related Fabrication Methods
Application:
18/660,332 →
Publication:
US US20240290832A1
Laser-Based Processing for Semiconductor Wafers
Patent:
12,315,729 →
Application:
18/661,994 →
Electrical Discharge Machining Processing for Semiconductor Workpiece
Photoionization Detector
Application:
18/633,985 →
Publication:
US US20240345041A1
Workpiece Surface Processing System for Semiconductor Wafers
Application:
18/663,862 →
Publication:
US US20250357182A1
Polishing Pad Assembly for Electrochemical Mechanical Polishing
Application:
18/663,883 →
Publication:
US US20250353136A1
Ionic Slurry for Electrochemical Mechanical Polishing
Application:
18/663,911 →
Publication:
US US20250357131A1
Multi-Scale Autoencoders for Semiconductor Workpiece Understanding
Patent:
12,322,087 →
Application:
18/674,427 →
Treatments for Improving Fracture Strength for Semiconductor Workpiece
Application:
18/680,764 →
Publication:
US US20250372382A1
Power Discrete Package Having Symmetric Pinouts and Process of Implementing the Same
Application:
18/733,442 →
Publication:
US US20250372520A1
Surface Processing of Semiconductor Workpieces
Method and System to Measure Optical Characteristics of Light-Transmissive Materials
Application:
18/737,609 →
Publication:
US US20250379107A1
Trench Based Semiconductor Devices with Heterojunction Gate
Application:
18/738,646 →
Publication:
US US20250380467A1
Nondestructive Characterization for Crystalline Wafers
Trench Based Semiconductor Devices with Increased Planarity
Application:
18/742,626 →
Publication:
US US20250386569A1
Power Module
Patent:
1,081,603 →
Application:
29/949,395 →
Gate-Controlled Semiconductor Devices Having Temperature Compensated Gate Resistances
Application:
18/755,884 →
Publication:
US US20260006884A1
Fiducial Structure for Inspection of Semiconductor Workpieces
Application:
18/759,307 →
Publication:
US US20260002886A1
High Throughput High Dynamic Range (HDR) Microscopy
Application:
18/759,385 →
Publication:
US US20260004401A1
Multi-Channel Workpiece Inspection System for Inspecting Semiconductor Workpieces
Application:
18/759,356 →
Publication:
US US20260002874A1
Large Diameter Silicon Carbide Wafers
Detecting Defects in Semiconductor Material
Application:
18/770,846 →
Publication:
US US20260016361A1
Semiconductor Devices with Drain-Source Avalanche Breakdown
Application:
18/772,731 →
Publication:
US US20260020295A1
Silicon Carbide Wafers with Relaxed Positive Bow and Related Methods
Application:
18/775,934 →
Publication:
US US20240367348A1
Boules with Boule-Handling Carrier Processing Methods
Application:
18/778,375 →
Publication:
US US20260021609A1
High Speed, Efficient Sic Power Module
Application:
18/779,946 →
Publication:
US US20240380320A1
Trench Based Semiconductor Devices with Conformal Salicide Thickness
Application:
18/781,526 →
Publication:
US US20260032984A1
Gate Trench Power Semiconductor Devices Having Shallow Trench Shields and Deep Support Shields
Application:
18/780,825 →
Publication:
US US20260032951A1
Wide Bandgap Semiconductor Device with Sensor Element
Application:
18/782,116 →
Publication:
US US20240379667A1
Multilayer Printed Circuit Board with Filling Segment Structures
Application:
18/782,438 →
Publication:
US US20250040030A1
Stabilizing GAN Training by Regulating Learning Rates in Semiconductor Workpiece Inspection Models
Application:
18/789,165 →
Publication:
US US20260038246A1
Gate Trench Power Semiconductor Devices Having Deep Channel Regions and Related Methods of Fabricating Same
Application:
18/788,395 →
Publication:
US US20260040613A1
Solid-State Circuit Breaker Configured with at Least One Fail-Open Mechanism and Process of Implementing the Same
Application:
18/791,725 →
Publication:
US US20260039105A1
Power Module
Application:
18/793,141 →
Publication:
US US20240395677A1
Power Semiconductor Devices Including Angled Gate Trenches
Application:
18/792,813 →
Publication:
US US20240395927A1
Non-Continuous Pad Structure for Power Semiconductor Devices and Power Semiconductor Devices Including Non-Continuous Pad Structures
Application:
18/796,522 →
Publication:
US US20260047470A1
Shape Model Generation and Use for Semiconductor Workpiece
Application:
18/802,817 →
Publication:
US US20260050246A1
Power Semiconductor Devices and Methods of Forming the Same
Application:
18/804,575 →
Publication:
US US20260052738A1
Encapsulation Delamination Prevention Structures at Die Edge
Application:
18/806,895 →
Publication:
US US20260053057A1
Stress Relief Features for Localized Die Stress Relief
Application:
18/807,029 →
Publication:
US US20260052994A1
Trench Based Semiconductor Devices with Epitaxially Regrown Layers
Application:
18/810,026 →
Publication:
US US20260059812A1
Semiconductor Devices Having Inner Gate Runners with Non-Orthogonal Inner Segments
Application:
18/810,884 →
Publication:
US US20260059837A1
Sidewall Dopant Shielding Methods and Approaches for Trenched Semiconductor Device Structures
Application:
18/813,208 →
Publication:
US US20240413197A1
Power Semiconductor Device Package
Application:
18/816,797 →
Publication:
US US20260068693A1
Shaped Solid Silicon Carbide Vapor Source Material Structure for use in a Sublimation System for Growing Crystalline Silicon Carbide
Application:
63/689,294 →
Bulk Silicon Carbide Crystal Growth System with 3D-Printed Parts
Application:
63/689,298 →
Silicon Carbide Vapor Source Material for use in a Sublimation System for Growing Crystalline Silicon Carbide
Application:
63/689,291 →
Semiconductor Devices with Drain-Source Connection for Avalanche Breakdown
Application:
18/826,969 →
Publication:
US US20260075901A1
Large Dimension Silicon Carbide Single Crystalline Materials with Reduced Crystallographic Stress
Application:
18/828,024 →
Publication:
US US20250006491A1
Trenched Diode Having Enhanced Forward Voltage Drop to Reverse Leakage Current Tradeoff and Method of Forming Such Device
Application:
18/830,713 →
Publication:
US US20260075887A1
Power Semiconductor Devices Including Deep Shielding Regions
Application:
18/830,731 →
Publication:
US US20260075904A1
System to Reduce Induced Subsurface Damage in Separation of Semiconductor Workpieces
Application:
18/830,879 →
Publication:
US US20260070158A1
Power Semiconductor Device Package
Application:
18/882,003 →
Publication:
US US20260076252A1
Power Semiconductor Device Assembly
Application:
18/887,327 →
Publication:
US US20260082907A1
Power Semiconductor Devices with Bond Pads Having Structural Support Layers
Application:
18/893,188 →
Publication:
US US20260090443A1
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jun 6, 2023
From: OLOF TORNBLAD; JIA GUO; SCOTT SHEPPARD
To: WOLFSPEED, INC.
Reel/Frame 063870/0266 →
Assignment of Assignor's Interest
Jun 14, 2023
From: KOMPOSCH, ALEXANDER; WOO, ENG WAH; NOORI, BASIM
To: WOLFSPEED, INC.
Reel/Frame 063944/0644 →
Assignment of Assignor's Interest
Jun 19, 2023
From: OLDHAM, NEAL; POTERA, RAHUL R.
To: WOLFSPEED, INC.
Reel/Frame 064022/0463 →
Assignment of Assignor's Interest
Jun 20, 2023
From: KING, MATTHEW; HARDIMAN, CHRIS; BOTHE, KYLE; FISHER, JEREMY
To: WOLFSPEED, INC.
Reel/Frame 063995/0649 →
Assignment of Assignor's Interest
Jun 23, 2023
From: POTERA, RAHUL R.
To: WOLFSPEED, INC.
Reel/Frame 064044/0241 →
Assignment of Assignor's Interest
Jun 26, 2023
From: PARK, JAE-HYUNG; JI, IN-HWAN; LICHTENWALNER, DANIEL J.; VAN BRUNT, EDWARD ROBERT
To: WOLFSPEED, INC.
Reel/Frame 064052/0848 →
Change of Name
Jul 7, 2023
From: PUN, ARTHUR; NOORI, BASIM
To: WOLFSPEED, INC.
Reel/Frame 064545/0554 →
Assignment of Assignor's Interest
Jul 7, 2023
From: PUN, ARTHUR; NOORI, BASIM
To: CREE, INC.
Reel/Frame 064187/0557 →
Change of Name
Aug 8, 2023
From: AVISI TECHNOLOGIES, LLC
To: AVISI TECHNOLOGIES, INC.
Reel/Frame 064523/0729 →
Assignment of Assignor's Interest
Aug 9, 2023
From: WHEELER, PAUL; MCPHERSON, BRICE; SCHUPBACH, ROBERTO MARCELO; MONTOYA, LEONARDO
To: WOLFSPEED, INC.
Reel/Frame 064536/0171 →
Assignment of Assignor's Interest
Aug 22, 2023
From: KIM, WOONGSUN; MCCAIN, MATTHEW N.; ISLAM, NAEEM; SAMPATH, MADANKUMAR
To: WOLFSPEED, INC.
Reel/Frame 064664/0490 →
Assignment of Assignor's Interest
Aug 28, 2023
From: RICHTER, DANIEL GINN; LIN, YUSHENG
To: WOLFSPEED, INC.
Reel/Frame 064725/0641 →
Assignment of Assignor's Interest
Aug 28, 2023
From: KOMPOSCH, ALEXANDER; FENDER, JASON R.; PALSGAARD, ERIC JACOB; KROON, DOUGLAS JOHN
To: WOLFSPEED, INC.
Reel/Frame 064727/0728 →
Assignment of Assignor's Interest
Sep 2, 2023
From: SCHUETTE, MICHAEL LEE; LEE, KYOUNGKEUN JOSEPH; KING, MATTHEW R.; HALLIN, CHRISTER
To: WOLFSPEED, INC.
Reel/Frame 064781/0518 →
Assignment of Assignor's Interest
Sep 2, 2023
From: HARRINGTON, THOMAS EDGAR, III
To: WOLFSPEED, INC.
Reel/Frame 064781/0509 →
Assignment of Assignor's Interest
Sep 2, 2023
From: DADVAND, AFSHIN; BALARAMAN, DEVARAJAN
To: WOLFSPEED, INC.
Reel/Frame 064781/0513 →
Assignment of Assignor's Interest
Sep 2, 2023
From: BOTHE, KYLE; SCHUETTE, MICHAEL LEE; TWEEDIE, JAMES SCOTT; SHEPPARD, SCOTT
To: WOLFSPEED, INC.
Reel/Frame 064781/0531 →
Assignment of Assignor's Interest
Sep 2, 2023
From: MCPHERSON, BRICE; PASSMORE, BRANDON; SCHUPBACH, ROBERTO M.; STABACH-SMITH, JENNIFER
To: CREE FAYETTEVILLE, INC.
Reel/Frame 064781/0539 →
Assignment of Assignor's Interest
Sep 2, 2023
From: RICHTER, DANIEL GINN; DADVAND, AFSHIN
To: WOLFSPEED, INC.
Reel/Frame 064781/0549 →
Assignment of Assignor's Interest
Sep 2, 2023
From: BALARAMAN, DEVARAJAN; RICHTER, DANIEL GINN
To: WOLFSPEED, INC.
Reel/Frame 064781/0554 →
Assignment of Assignor's Interest
Sep 2, 2023
From: BOTHE, KYLE; GUO, JIA; HALLIN, CHRISTER; SUVOROV, ALEXANDER V.
To: WOLFSPEED, INC.
Reel/Frame 064781/0559 →
Merger
Sep 22, 2023
From: CREE FAYETTEVILLE, INC.
To: CREE, INC.
Reel/Frame 064996/0909 →
Change of Name
Sep 26, 2023
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 065028/0262 →
Assignment of Assignor's Interest
Aug 16, 2024
From: DADVAND, AFSHIN
To: WOLFSPEED, INC.
Reel/Frame 068307/0139 →
Assignment of Assignor's Interest
Jan 29, 2025
From: MARTIN, DANIEL JOHN; CURBOW, WILLIAM
To: CREE FAYETTEVILLE, INC.
Reel/Frame 070041/0455 →