SHAPE MODEL GENERATION AND USE FOR SEMICONDUCTOR WORKPIECE
A method of generating a shape model of a semiconductor workpiece. The method includes collecting displacement data across a first surface of the semiconductor workpiece; and generating the shape model of the semiconductor workpiece based on the displacement data. Related methods and apparatus are also provided.
1 . A method of generating a shape model of a semiconductor workpiece, the method comprising:
collecting displacement data across a first surface of the semiconductor workpiece; and
generating the shape model for the semiconductor workpiece based on the displacement data.
2 . The method of claim 1 , further comprising:
focusing an image device using the shape model for the semiconductor workpiece.
3 . The method of claim 1 , wherein the displacement data is collected from a plurality of line scans across the first surface of the semiconductor workpiece.
4 . The method of claim 1 , wherein the collecting comprises collecting displacement data in an approximately continuous manner along the first surface of the semiconductor workpiece.
5 . The method of claim 3 , wherein the plurality of line scans includes at least two line scans across the first surface of the semiconductor workpiece.
6 . The method of claim 1 , wherein generating the shape model comprises:
fitting a shape to the semiconductor workpiece based on the displacement data;
fitting a mathematical function to height data from the displacement data; and
forming a smooth interpolation between the mathematical function and an additional area of the semiconductor workpiece for inclusion in the shape model.
7 . The method of claim 6 , wherein the mathematical function comprises a Zernike polynomial of a defined order.
8 . The method of claim 6 , wherein fitting the mathematical function is based on at least one of a least squares process and a random sample consensus, RANSAC.
9 . The method of claim 6 , the method further comprising:
shifting the height data such that a center of the semiconductor workpiece has a cartesian coordinate position of zero on a first cartesian axis and zero on a second cartesian axis; and
converting the cartesian coordinate positions of the height data to polar coordinates to obtain polar-converted height data.
10 . The method of claim 6 , further comprising:
sampling the fitted mathematical function on a defined coordinate system; and
shifting the defined coordinate system to absolute coordinates of the imaging device in which the semiconductor workpiece is positioned.
11 . The method of claim 1 , wherein the shape model comprises a focus map of the semiconductor workpiece.
12 . The method of claim 7 , wherein the Zernike polynomial comprises a first tilt along a first cartesian axis and a second tilt along a second cartesian axis, the method further comprising:
removing the first tilt and the second tilt from the Zernike polynomial to obtain an estimate of at least one of a warp and a bow of the semiconductor workpiece.
13 . The method of claim 1 , wherein the shape model comprises image data of the semiconductor workpiece.
14 . A semiconductor workpiece system comprising:
a workpiece holder configured to hold a semiconductor workpiece;
a displacement sensor configured to collect displacement data along a first surface of a semiconductor workpiece; and
control circuitry configured to generate a shape model of the semiconductor workpiece based on the displacement data.
15 . The semiconductor workpiece system of claim 14 , further comprising:
an image device configured to focus based on the shape model for the semiconductor workpiece.
16 . The semiconductor workpiece system of claim 14 , wherein the displacement sensor comprises a confocal chromatic sensor.
17 . The semiconductor workpiece system of claim 14 , wherein the displacement sensor comprises at least one of a white light interferometer sensor, a laser sensor, and an ultrasonic sensor.
18 . The semiconductor workpiece system of claim 14 , wherein the displacement data is collected from a plurality of line scans across the first surface of the semiconductor workpiece.
19 . The semiconductor workpiece system of claim 14 , wherein the displacement sensor is configured to collect displacement data in an approximately continuous manner along the first surface of the semiconductor workpiece.
20 . The semiconductor workpiece system of claim 18 , wherein the plurality of line scans includes at least two line scans across the first surface of the semiconductor workpiece.
21 . The semiconductor workpiece system of claim 14 , wherein generate the shape model comprises:
fit a shape to the semiconductor workpiece based on the displacement data;
fit a mathematical function to height data from the displacement data; and
form a smooth interpolation between the mathematical function and an additional area of the semiconductor workpiece for inclusion in the shape model.
22 . The semiconductor workpiece system of claim 21 , wherein the mathematical function comprises a Zernike polynomial of a defined order.
23 . The semiconductor workpiece system of claim 21 , wherein fit the mathematical function is based on at least one of a least squares process and a random sample consensus, RANSAC.
24 . The semiconductor workpiece system method of claim 21 , wherein the control circuitry in further configured to:
shift the height data such that a center of the semiconductor workpiece has a cartesian coordinate position of zero on a first cartesian axis and zero on a second cartesian axis; and
convert the cartesian coordinate positions of the height data to polar coordinates to obtain polar-converted height data.
25 . The semiconductor workpiece system of claim 21 , wherein the control circuitry is further configured to:
sample the fitted mathematical function on a defined coordinate system; and
shift the defined coordinate system to absolute coordinates of the imaging device in which the semiconductor workpiece is positioned.
26 . The semiconductor workpiece system of claim 14 , wherein the shape model comprises a focus map of the semiconductor workpiece.
27 . The semiconductor workpiece system of claim 22 , wherein the Zernike polynomial comprises a first tilt along a first cartesian axis and a second tilt along a second cartesian axis, and the control circuitry is further configured to:
remove the first tilt and the second tilt from the Zernike polynomial to obtain an estimate of at least one of a warp and a bow of the semiconductor workpiece.
28 . The semiconductor workpiece system of claim 14 , wherein the shape model comprises image data of the semiconductor workpiece.
29 . A method of generating image data of a semiconductor workpiece, the method comprising:
collecting displacement data across a first surface of the semiconductor workpiece; and
generating the image data of a shape of the semiconductor workpiece based on the displacement data.
30 . The method of claim 29 , further comprising:
processing the image data to obtain information about the semiconductor workpiece comprising at least one of an inspection result for the semiconductor workpiece, information used in processing of the semiconductor workpiece, and a characteristic of the semiconductor workpiece.
31 . The method of claim 30 , wherein the characteristic of the semiconductor workpiece comprises at least one of a warp and a bow of the semiconductor workpiece with a tilt of the semiconductor workpiece removed.
32 . A semiconductor workpiece system comprising:
a workpiece holder configured to hold a semiconductor workpiece;
a displacement sensor configured to collect displacement data along a first surface of a semiconductor workpiece; and
control circuitry configured to generate the image data of a shape of the semiconductor workpiece based on the displacement data.
33 . The semiconductor workpiece system of claim 32 , wherein the control circuitry is configured to process the image data to obtain information about the semiconductor workpiece comprising at least one of an inspection result for the semiconductor workpiece, information used in processing of the semiconductor workpiece, and a characteristic of the semiconductor workpiece.
34 . The semiconductor workpiece system of claim 33 , wherein the characteristic of the semiconductor workpiece comprises at least one of a warp and a bow of the semiconductor workpiece with a tilt of the semiconductor workpiece removed.
35 . A method of focusing an imaging device on a semiconductor workpiece, the method comprising:
focusing the image device on the semiconductor workpiece using a shape model for the semiconductor workpiece based on displacement data, from a displacement sensor, across a first surface of the semiconductor workpiece.
36 . The method of claim 35 , wherein the shape model comprises a focus map of the semiconductor workpiece.
37 . The method of claim 35 , wherein the displacement data is collected from a plurality of line scans across the first surface of the semiconductor workpiece.
38 . The method of claim 35 , wherein the displacement data is approximately continuous along the first surface of the semiconductor workpiece.
39 . The method of claim 37 , wherein the plurality of line scans includes at least two line scans across the first surface of the semiconductor workpiece.
40 . The method of claim 35 , further comprising:
generating the shape model based on fitting a shape to the semiconductor workpiece based on the displacement data;
fitting a mathematical function to height data from the displacement data; and
forming a smooth interpolation between the mathematical function and an additional area of the semiconductor workpiece for inclusion in the shape model.
41 . The method of claim 40 , wherein the mathematical function comprises a Zernike polynomial of a defined order.
42 . The method of claim 40 , wherein fitting the mathematical function is based on at least one of a least squares process and a random sample consensus, RANSAC.
43 . The method of claim 40 , the method further comprising:
shifting the height data such that a center of the semiconductor workpiece has a cartesian coordinate position of zero on a first cartesian axis and zero on a second cartesian axis; and
converting the cartesian coordinate positions of the height data to polar coordinates to obtain polar-converted height data.
44 . The method of claim 40 , further comprising:
sampling the fitted mathematical function on a defined coordinate system; and
shifting the defined coordinate system to absolute coordinates of the imaging device in which the semiconductor workpiece is positioned.
45 . The method of claim 41 , wherein the Zernike polynomial comprises a first tilt along a first cartesian axis and a second tilt along a second cartesian axis, the method further comprising:
removing the first tilt and the second tilt from the Zernike polynomial to obtain an estimate of at least one of a warp and a bow of the semiconductor workpiece.
46 . A semiconductor workpiece imaging system comprising:
a workpiece holder configured to hold a semiconductor workpiece;
a displacement sensor configured to collect displacement data along a first surface of a semiconductor workpiece;
control circuitry configured to generate a shape model for the semiconductor workpiece based on the displacement data and to focus an image device on the semiconductor workpiece using the shape model for the semiconductor workpiece.
47 . The semiconductor workpiece imaging system of claim 46 , wherein the shape model comprises a focus map of the semiconductor workpiece.
48 . The semiconductor workpiece imaging system of claim 46 , wherein the displacement data is collected from a plurality of line scans across the first surface of the semiconductor workpiece.
49 . The semiconductor workpiece imaging system of claim 46 , wherein the collecting comprises collecting displacement data in an approximately continuous manner along the first surface of the semiconductor workpiece.
50 . The semiconductor workpiece imaging system of claim 48 , wherein the plurality of line scans includes at least two line scans across the first surface of the semiconductor workpiece.
51 . The semiconductor workpiece imaging system of claim 46 , wherein generate the shape model comprises:
fit a shape to the semiconductor workpiece based on the displacement data;
fit a mathematical function to height data from the displacement data; and
form a smooth interpolation between the mathematical function and an additional area of the semiconductor workpiece for inclusion in the shape model.
52 . The semiconductor workpiece imaging system of claim 51 , wherein the mathematical function comprises a Zernike polynomial of a defined order.
53 . The semiconductor workpiece imaging system of claim 51 , wherein fit the mathematical function is based on at least one of a least squares process and a random sample consensus, RANSAC.
54 . The semiconductor workpiece imaging system of claim 46 , wherein the control circuitry is further configured to:
shift the height data such that a center of the semiconductor workpiece has a cartesian coordinate position of zero on a first cartesian axis and zero on a second cartesian axis; and
convert the cartesian coordinate positions of the height data to polar coordinates to obtain polar-converted height data.
55 . The semiconductor workpiece imaging system of claim 46 , wherein the control circuitry is further configured to:
sample the fitted mathematical function on a defined coordinate system; and
shift the defined coordinate system to absolute coordinates of the imaging device in which the semiconductor workpiece is positioned.
56 . The semiconductor workpiece imaging system of claim 52 , wherein the Zernike polynomial comprises a first tilt along a first cartesian axis and a second tilt along a second cartesian axis, and the control circuitry is further configured to:
remove the first tilt and the second tilt from the Zernike polynomial to obtain an estimate of at least one of a warp and a bow of the semiconductor workpiece.