Semiconductor Die Bonding
Die-attach materials for semiconductor device packages are provided. In one example, a semiconductor device package includes a submount. The semiconductor device package includes a semiconductor die comprising a wide bandgap semiconductor. The semiconductor device package includes a die-attach layer between the submount and the semiconductor die. The die-attach layer comprises gold (Au), tin (Sn), and cobalt (Co).
1 . A semiconductor device package, comprising:
a submount;
a semiconductor die comprising a wide bandgap semiconductor;
a die-attach layer between the submount and the semiconductor die; and
wherein the die-attach layer comprises gold (Au), tin (Sn), and cobalt (Co).
2 . The semiconductor device package of claim 1 , wherein a concentration of cobalt in the die-attach layer is in a range of about 0.01% by weight to about 0.5% by weight.
3 . The semiconductor device package of claim 1 , wherein a concentration of cobalt in the die-attach layer is in a range of about 0.01% by weight to about 0.25% by weight.
4 . The semiconductor device package of claim 1 , wherein the die-attach layer comprises a eutectic alloy.
5 . The semiconductor device package of claim 1 , wherein the semiconductor device package comprises a protective layer on the die-attach layer.
6 . The semiconductor device package of claim 5 , wherein the protective layer comprises gold.
7 . The semiconductor device package of claim 1 , wherein the die-attach layer further comprises nickel (Ni), silver (Ag), copper (Cu), or aluminum (Al).
8 . The semiconductor device package of claim 1 , wherein the semiconductor device package comprises an adhesion layer.
9 . (canceled)
10 . The semiconductor device package of claim 8 , further comprising a diffusion barrier layer.
11 . The semiconductor device package of claim 10 , wherein the diffusion barrier layer comprises one or more of silver (Ag), nickel (Ni), palladium (Pd), or copper (Cu).
12 . The semiconductor device package of claim 1 , wherein a concentration of tin (Sn) in the die-attach layer is in a range of about 10% by weight to about 30% by weight.
13 . The semiconductor device package of claim 1 , wherein a concentration of gold (Au) in the die-attach layer is in a range of about 65% by weight to about 85% by weight.
14 . The semiconductor device package of claim 1 , wherein the die-attach layer is lead (Pb) free.
15 . The semiconductor device package of claim 1 , wherein the submount comprises copper (Cu).
16 . The semiconductor device package of claim 1 , wherein the submount comprises silver-plated copper (Cu).
17 . The semiconductor device package of claim 1 , wherein the submount comprises a lead frame, a clip structure, or a direct bonded copper (DBC) submount.
18 . The semiconductor device package of claim 1 , wherein the wide bandgap semiconductor comprises silicon carbide or a Group III nitride.
19 . (canceled)
20 . The semiconductor device package of claim 1 , wherein the semiconductor device package is a discrete power semiconductor package or a power module.
21 . (canceled)
22 . An attach material for attaching a wide bandgap semiconductor device to a submount, the attach material comprising a eutectic alloy, the eutectic alloy comprising gold (Au), tin (Sn), and cobalt (Co), wherein a concentration of cobalt in the eutectic alloy is in a range of about 0.01% by weight to about 0.5% by weight.
23 .- 30 . (canceled)
31 . A method for fabricating a semiconductor device package, comprising:
providing a die-attach material, the die-attach material comprising gold (Au), tin (Sn), and cobalt (Co), wherein a concentration of cobalt (Co) in the die-attach material is in a range of about 0.01% by weight to about 0.5% by weight; and
attaching a semiconductor die to a submount with the die-attach material.
32 .- 54 . (canceled)