Anti-Reflective Layer for Protecting an N-Polar Group III-Nitride Semiconductor Structure
Semiconductor structures including N-polar Group III-nitride are provided. The semiconductor structure includes an anti-reflective layer provided on an N-polar Group III-nitride semiconductor structure. The semiconductor structure includes a photoresist layer on the N-Polar Group III-nitride semiconductor structure. The anti-reflective layer has a thickness outside of an anti-reflectivity range associated with a photolithography process.
1 . An N-Polar Group III-nitride semiconductor structure, comprising:
an N-Polar Group III-nitride semiconductor structure;
an anti-reflective layer on the N-Polar Group III-nitride semiconductor structure;
a photoresist layer on the N-Polar Group III-nitride semiconductor structure;
wherein the anti-reflective layer has a thickness in a range of about 85 nm to about 130 nm or has a thickness of about 175 nm or greater.
2 . The N-Polar Group III-nitride semiconductor structure of claim 1 , wherein the anti-reflective layer has a thickness in a range of about 175 nm to about 400 nm.
3 . The N-Polar Group III-nitride semiconductor structure of claim 1 , wherein the anti-reflective layer comprises an organic anti-reflective layer.
4 . The N-Polar Group III-nitride semiconductor structure of claim 1 , wherein the anti-reflective layer has thickness associated with a reflectivity of about 3% or greater.
5 . The N-Polar Group III-nitride semiconductor structure of claim 1 , wherein the N-Polar Group III-nitride semiconductor structure comprise an N-polar Group III-nitride layer provided on a substrate.
6 . The N-Polar Group III-nitride semiconductor structure of claim 5 , wherein the substrate comprises silicon carbide.
7 . The N-Polar Group III-nitride semiconductor structure of claim 6 , wherein the substrate comprises a 4H-silicon carbide substrate.
8 . A method for processing an N-polar Group III-nitride semiconductor structure, comprising:
providing an anti-reflective layer on an N-polar Group III-nitride semiconductor structure, the N-Polar Group III-nitride semiconductor structure comprising an N-polar Group III-nitride layer;
providing a photoresist layer on the anti-reflective layer; and
conducting a photolithography process on the N-Polar Group III-nitride semiconductor structure to pattern the photoresist layer;
wherein the anti-reflective layer has a thickness outside an anti-reflective range associated with the photolithography process.
9 . The method of claim 8 , wherein the anti-reflective layer has a thickness of from about 85 nm to about 130 nm.
10 . The method of claim 9 , wherein the anti-reflective layer has a thickness of from about 90 nm to about 110 nm.
11 . The method of claim 8 , wherein the anti-reflective layer comprises an organic anti-reflective layer.
12 . The method of claim 8 , wherein the anti-reflective layer has thickness associated with a reflectivity of about 3% or greater.
13 . The method of claim 8 , wherein the N-Polar Group III-nitride semiconductor structure comprises the N-polar Group III-nitride layer provided on a substrate.
14 . The method of claim 13 , wherein the substrate comprises silicon carbide.
15 . The method of claim 8 , wherein conducting a photolithography process on the N-Polar Group III-nitride semiconductor structure to pattern the photoresist layer, comprises:
exposing the photoresist layer to radiation to pattern the photoresist layer; and
developing the photoresist layer to form a photoresist pattern.
16 . The method of claim 15 , comprising etching the anti-reflective layer and the N-polar Group III-nitride layer according to the photoresist pattern.
17 . The method of claim 16 , comprising removing the photoresist layer from the photoresist pattern from the N-Polar Group III-nitride semiconductor structure.
18 . The method of claim 17 , comprising removing any remaining anti-reflective layer from the N-Polar Group III-nitride semiconductor structure.
19 . The method of claim 8 , comprising fabricating a semiconductor device at least partially in the N-polar Group III-nitride layer.
20 . A method for processing an N-polar Group III-nitride semiconductor structure, comprising:
providing an anti-reflective layer on an N-polar Group III-nitride semiconductor structure, the N-Polar Group III-nitride semiconductor structure comprising an N-polar Group III-nitride layer;
providing a photoresist layer on the anti-reflective layer; and
conducting a photolithography process on the N-Polar Group III-nitride semiconductor structure to pattern the photoresist layer;
wherein the anti-reflective layer has a thickness of from about 85 nm to about 130 nm or has a thickness greater than about 175 nm.
21 .- 38 . (canceled)