IP Library › Granted Patent US 12,269,123
Granted Patent B1
US 12,269,123 · App. 18/628,275 · Granted Apr 8, 2025

Laser edge shaping for semiconductor wafers

Inventors: Joseph Taylor Budd (Pittsboro, NC); Tyler Evan Irion Whitmore (Durham, NC); Davis Andrew McClure (Raleigh, NC)
Assignee: WOLFSPEED, INC.
B23K26/38B23K26/03B23K26/08B23K26/3568H01L21/0475H01L21/268H01L21/3043B23K2101/40
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Quick Facts
Patent No.
US 12,269,123
App. No.
18/628,275
Granted
Apr 8, 2025
Kind
B1
Abstract

Systems and methods for laser-based processing of semiconductor wafers are provided. In one example, a method includes providing emission of a laser from a laser source towards an edge portion of a wide bandgap semiconductor workpiece from a direction facing a side surface of the wide bandgap semiconductor workpiece, the side surface extending between a first major surface of the wide bandgap semiconductor workpiece and an opposing second major surface of the wide bandgap semiconductor workpiece. The method includes ablating the edge portion of the wide bandgap semiconductor workpiece with the laser to remove material from the edge portion of the wide bandgap semiconductor workpiece.

Claims (46)

1. A method, comprising:

providing emission of a laser from a laser source towards an edge portion of a semiconductor workpiece from a direction facing a side surface of the semiconductor workpiece, the side surface extending between a first major surface of the semiconductor workpiece and an opposing second major surface of the semiconductor workpiece; and

ablating the edge portion of the semiconductor workpiece with the laser to remove material from the edge portion of the semiconductor workpiece,

wherein the semiconductor workpiece comprises silicon carbide or a Group III-nitride.

2. The method of claim 1 , wherein providing emission of the laser from the laser source towards the edge portion of the semiconductor workpiece comprises:

positioning the laser source to output the laser in a first plane that is generally parallel to respective planes defined by the first major surface and the opposing second major surface of the semiconductor workpiece.

3. The method of claim 1 , wherein ablating the edge portion of the semiconductor workpiece comprises ablating the edge portion to have a defined edge profile, wherein the defined edge profile is a beveled edge or a rounded edge.

4. The method of claim 1 , wherein ablating the edge portion of the semiconductor workpiece with the laser comprises:

obtaining data indicative of a defined edge profile;

determining one or more laser ablation parameters based on the data indicative of the defined edge profile; and

ablating, with the laser, the edge portion of the semiconductor workpiece based at least in part on the one or more laser ablation parameters.

5. The method of claim 4 , further comprising:

obtaining sensor data from a sensor indicative of a current state of the edge portion; and

adjusting one or more laser ablation parameters based at least in part on the sensor data.

6. The method of claim 1 , wherein ablating the edge portion of the semiconductor workpiece comprises reducing a surface roughness of the edge portion of the semiconductor workpiece.

7. The method of claim 1 , wherein the semiconductor workpiece has a notch or a flat, ablating the edge portion of the semiconductor workpiece comprises ablating within the notch or the flat.

8. The method of claim 7 , further comprising creating the notch or the flat with the laser.

9. The method of claim 1 , wherein ablating the edge portion of the semiconductor workpiece comprises:

ablating the edge portion within each of a plurality of azimuthal sections of the semiconductor workpiece.

10. The method of claim 9 , wherein ablating the edge portion within each azimuthal section comprises ablating the azimuthal section in a plurality of vertical, horizontal, or angled scans across the azimuthal section.

11. The method of claim 1 , wherein the method further comprises: ablating one or more strain relief features or one or more cooling features in the side surface.

12. The method of claim 1 , wherein ablating the edge portion of the semiconductor workpiece forms a shaped edge portion having a surface with a surface roughness in a range of less about 0.1 micron to about 1 micron.

13. A system for forming a semiconductor workpiece, the system comprising:

a workpiece support configured to support a semiconductor workpiece, the semiconductor workpiece having a side surface extending between a first major surface and an opposing second major surface;

a laser source configured to: emit a laser towards an edge portion of the semiconductor workpiece from a direction facing the side surface of the semiconductor workpiece, and ablate the edge portion of the semiconductor workpiece with the laser; and

a controller configured to perform operations, the operations comprising:

obtaining data indicative of a defined edge profile;

determining one or more laser ablation parameters based on the data indicative of the defined edge profile; and

controlling the laser to ablate the edge portion of the semiconductor workpiece based at least in part on the one or more laser ablation parameters.

14. The system of claim 13 , further comprising:

a sensor operable to obtain sensor data indicative of a current state of the edge portion; and

wherein the operations further comprise adjusting the one or more laser ablation parameters based at least in part on the sensor data.

15. The system of claim 13 , wherein the laser source is configured to ablate the edge portion within each of a plurality of azimuthal sections of the semiconductor workpiece.

16. The system of claim 13 , wherein the laser source is configured to emit the laser in a plurality of scans across the edge portion, wherein each scan of the plurality of scans has a scan dimension of about 10 microns to about 25 millimeters.

17. The system of claim 16 , wherein each scan of the plurality of scans removes material to a depth of about 1 micron to about 10 microns.

18. The system of claim 13 , wherein the semiconductor workpiece comprises silicon carbide or a Group III-nitride.

19. A method, comprising:

providing emission of a laser from a laser source towards an edge portion of a semiconductor workpiece from a direction facing a side surface of the semiconductor workpiece, the side surface extending between a first major surface of the semiconductor workpiece and an opposing second major surface of the semiconductor workpiece; and

ablating the edge portion of the semiconductor workpiece with the laser to remove material from the edge portion of the semiconductor workpiece,

wherein ablating the edge portion of the semiconductor workpiece comprises reducing a surface roughness of the edge portion of the semiconductor workpiece.

20. The method of claim 19 , wherein the method further comprises ablating one or more strain relief features or one or more cooling features in the side surface.

21. A method, comprising:

providing emission of a laser from a laser source towards an edge portion of a semiconductor workpiece from a direction facing a side surface of the semiconductor workpiece, the side surface extending between a first major surface of the semiconductor workpiece and an opposing second major surface of the semiconductor workpiece; and

ablating the edge portion of the semiconductor workpiece with the laser to remove material from the edge portion of the semiconductor workpiece,

wherein providing emission of the laser from the laser source towards the edge portion of the semiconductor workpiece comprises:

positioning the laser source to output the laser in a first plane that is generally parallel to respective planes defined by the first major surface and the opposing second major surface of the semiconductor workpiece.

Assignments (8)
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Mar 26, 2026
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 075280/0919 →
RELEASE OF SECURITY INTEREST IN INTELLECTUAL PROPERTY COLLATERAL AT REEL/FRAME NO. 69180/0437 Recorded Sep 30, 2025
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 072989/0088 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0113 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0381 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0467 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0588 →
SECURITY INTEREST Recorded Oct 17, 2024
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 069180/0437 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 4, 2024
From: BUDD, JOSEPH TAYLOR; WHITMORE, TYLER EVAN IRION; MCCLURE, DAVIS ANDREW
To: WOLFSPEED, INC.
Reel/Frame 068487/0048 →
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