SEMICONDUCTOR DEVICES HAVING INNER GATE RUNNERS WITH NON-ORTHOGONAL INNER SEGMENTS
A semiconductor device comprises a semiconductor layer structure, a gate pad on the semiconductor layer structure, and a metal gate runner on the semiconductor layer structure. The metal gate runner comprises an inner gate runner that comprises a first inner segment and a second inner segment that interconnect at a first oblique angle.
1 . A semiconductor device, comprising:
a semiconductor layer structure;
a gate pad on the semiconductor layer structure; and
a metal gate runner on the semiconductor layer structure that comprises an inner gate runner that comprises a first inner segment and a second inner segment that interconnect at a first oblique angle.
2 . The semiconductor device of claim 1 , wherein the first inner segment extends from the gate pad along an axis that defines a second oblique angle with respect to a first major side of the gate pad.
3 . The semiconductor device of claim 2 , wherein the first inner segment connects the gate pad to the second inner segment.
4 . (canceled)
5 . The semiconductor device of claim 2 , further comprising a plurality of source bond pads, wherein the first inner segment is positioned between a first of the source bond pads and a second of the source bond pads.
6 . The semiconductor device of claim 5 , wherein the semiconductor device comprises a metal oxide semiconductor field effect transistor that comprises a plurality of unit cell transistors, and wherein a straight current path is provided between each unit cell transistor and at least one of source bond pads.
7 . (canceled)
8 . The semiconductor device of claim 1 , wherein the second inner segment extends in parallel to a first major side of the semiconductor layer structure, and the first inner segment extends from the second inner segment toward a corner region of the semiconductor layer structure.
9 . The semiconductor device of claim 1 , wherein the inner gate runner further comprises a third inner segment, and the first inner segment, the second inner segment and the third inner segment each extend in different directions.
10 . The semiconductor device of claim 9 , wherein the inner gate runner further comprises a fourth inner segment, and the first inner segment, the second inner segment, the third inner segment and the fourth inner segment each extend in different directions.
11 . The semiconductor device of claim 1 , wherein the semiconductor layer structure comprises an active region, and wherein the metal gate runner further comprises an outer gate runner that extends around a portion of a periphery of the active region, where the outer gate runner comprises a first outer segment.
12 . The semiconductor device of claim 11 , wherein the inner first inner segment extends from the first outer segment.
13 . The semiconductor device of claim 11 , wherein the outer gate runner further comprises a second outer segment, and the first inner segment is interposed an on electrical path between the first outer segment and the second outer segment.
14 - 25 . (canceled)
26 . A semiconductor device, comprising:
a semiconductor layer structure;
a gate pad on the semiconductor layer structure; and
a metal gate runner that comprises an inner gate runner that comprises a first inner segment that extends in a first direction, a second inner segment that extends in a second direction and a third inner segment that extends in a third direction, where the first direction, the second direction and the third direction are different.
27 . (canceled)
28 . The semiconductor device of claim 26 , wherein the first inner segment extends from the gate pad along an axis that defines a first oblique angle with respect to a first major side of the gate pad.
29 . The semiconductor device of claim 28 , wherein the first inner segment extends from a corner region of the gate pad.
30 - 31 . (canceled)
32 . The semiconductor device of claim 26 , wherein the first inner segment is electrically interposed between the gate pad and the second inner segment, and the second inner segment is electrically interposed between the first inner segment and the third inner segment, and the third inner segment interconnects to the second inner segment at a second oblique angle.
33 - 37 . (canceled)
38 . The semiconductor device of claim 26 , wherein the first inner segment extends from the gate pad along a first axis that defines a first oblique angle with respect to a first major side of the gate pad, and the second inner segment extends from the gate pad along a second axis that defines a second oblique angle with respect to the first major side of the gate pad.
39 . A semiconductor device, comprising:
a semiconductor layer structure that comprises a plurality of major sides;
a gate pad on the semiconductor layer structure; and
a metal gate runner that comprises an inner gate runner that comprises a first inner segment that extends along an axis that defines an oblique angle with respect to a first of the major sides of the semiconductor layer structure.
40 . The semiconductor device of claim 39 , wherein the first inner segment directly connects to the gate pad.
41 . The semiconductor device of claim 40 , wherein the gate pad comprises first and second major sides that extend along perpendicular axes and the first inner segment extends from a corner region of the gate pad at an angle of between 30° and 60° with respect to the first major side of the gate pad.
42 - 43 . (canceled)
44 . The semiconductor device of claim 39 , wherein the inner gate runner further comprises a second inner segment and a third inner segment, and wherein the first inner segment, the second inner segment and the third inner segment each extend in different directions.
45 - 62 . (canceled)