Patent Application

App. No. 18/656,059

Abstract

Claims (49)

1 . A power semiconductor device, comprising:

a semiconductor structure;

a metallization structure on the semiconductor structure;

a first passivation layer on the metallization structure, the first passivation having a first thickness;

a buffer layer on the first passivation layer; and

a second passivation layer on the buffer layer, the second passivation layer comprising the same material as the first passivation layer, the second passivation layer having a second thickness that is different than the first thickness.

2 . The power semiconductor device of claim 1 , further comprising a polyimide layer directly contacting the second passivation layer.

3 . The power semiconductor device of claim 1 , wherein the first passivation layer has a lesser thickness relative to the second passivation layer.

4 . The power semiconductor device of claim 1 , wherein the first passivation layer and the second passivation layer comprise a nitride.

5 . The power semiconductor device of claim 1 , wherein the buffer layer is an oxide buffer layer, the oxide buffer layer comprising one of silicon dioxide (SiO 2 ), hafnium dioxide (HfO 2 ), zirconium dioxide (ZrO 2 ), or aluminum oxide (Al 2 O 3 ).

6 . The power semiconductor device of claim 1 , wherein at least a portion of the first passivation layer directly contacts the metallization structure.

7 . The power semiconductor device of claim 1 , wherein the metallization structure is one or more of an electrode, an interconnect, or a runner for the semiconductor structure.

8 . The power semiconductor device of claim 1 , wherein the power semiconductor device comprises one of a silicon carbide-based metal-oxide-semiconductor field-effect transistor (MOSFET), a silicon carbide-based Schottky diode, or a Group-III nitride-based high electron mobility transistor (HEMT) device.

9 . A power semiconductor device package, comprising:

a submount; and

a semiconductor die on the submount, the semiconductor die comprising:

a metallization structure;

a first passivation layer on the metallization structure;

a buffer layer on the first passivation layer;

a second passivation layer on the buffer layer, the second passivation layer comprising the same material as the first passivation layer; and

a polyimide layer directly on the second passivation layer.

10 . The power semiconductor device package of claim 9 , wherein:

the first passivation layer comprises silicon nitride;

the buffer layer comprises silicon dioxide; and

the second passivation layer comprises silicon nitride,

wherein the first passivation layer has a first thickness and the second passivation layer has a second thickness, the second thickness being different than the first thickness.

11 . The power semiconductor device package of claim 9 , wherein:

the buffer layer is a stress absorbing layer for the second passivation layer; and

the first passivation layer reduces metal diffusion along an interface between the buffer layer and the metallization structure.

12 . The power semiconductor device package of claim 9 , wherein the metallization structure is a first metallization structure on a semiconductor structure of the semiconductor die, the semiconductor die further comprising:

a second metallization structure on the semiconductor structure, wherein at least a portion of the first passivation layer is on the second metallization structure, and wherein the first metallization structure is a source runner for the semiconductor die and the second metallization structure is a gate runner for the semiconductor die.

13 . The power semiconductor device package of claim 12 , further comprising an ohmic contact on the semiconductor structure, the ohmic contact comprising a silicide layer between the first metallization structure and the semiconductor structure.

14 . The power semiconductor device package of claim 12 , wherein the first metallization structure and the second metallization structure are spaced apart from one another and are each peripheral runner structures for the semiconductor die, the first metallization structure and the second metallization structure being located around at least a part of a peripheral portion of the semiconductor die.

15 . The power semiconductor device package of claim 9 , wherein the first passivation layer forms a seal between the buffer layer and the metallization structure.

16 . The power semiconductor device package of claim 9 , wherein the semiconductor die comprises a wide bandgap semiconductor structure comprising one of silicon carbide or a Group III-nitride.

17 . A method, comprising:

providing a semiconductor structure;

providing a metallization structure on the semiconductor structure;

providing a first passivation layer on the metallization structure, the first passivation layer having a first thickness;

providing a buffer layer on the first passivation layer; and

providing a second passivation layer on the buffer layer, the second passivation layer comprising the same material as the first passivation layer, the second passivation layer having a second thickness that is different than the first thickness.

18 . The method of claim 17 , further comprising:

providing a third passivation layer directly on the second passivation layer,

wherein the third passivation layer is a polyimide layer.

19 . The method of claim 18 , further comprising:

performing a dicing process to form a semiconductor die, the semiconductor die comprising the semiconductor structure, the metallization structure, the first passivation layer, the buffer layer, the second passivation layer, and the third passivation layer; and

bonding the semiconductor die to a submount with a die-attach material.

20 . The method of claim 17 , wherein the metallization structure is a first metallization structure, the method further comprising:

providing a second metallization structure on the semiconductor structure, wherein at least a portion of the first passivation layer is provided on the second metallization structure.

Assignments (8)