GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP CHANNEL REGIONS AND RELATED METHODS OF FABRICATING SAME
A semiconductor device comprises a semiconductor layer structure that comprises a drift layer having a first conductivity type, a first well region having a second conductivity type, a second well region having the second conductivity type and a JFET region having the first conductivity type, where the JFET region has a doping concentration that is higher than a doping concentration of the drift layer. A gate trench is provided in the semiconductor layer structure. The first well region forms a first sidewall of the gate trench and the second well region forms a second sidewall of the gate trench. Additionally, first and second sidewalls of the JFET region are aligned with respective first and second sidewalls of the gate trench.
1 . A semiconductor device, comprising:
a semiconductor layer structure that comprises a drift layer having a first conductivity type, wherein an upper portion of the drift layer comprises a JFET region having the first conductivity type, where the JFET region has a doping concentration that is higher than a doping concentration of a lower portion of the drift layer; and
a gate trench that has a first sidewall and a second sidewall in the semiconductor layer structure,
wherein first and second sidewalls of the JFET region are aligned with respective first and second sidewalls of the gate trench.
2 . The semiconductor device of claim 1 , further comprising a first well region having a second conductivity type that comprises a first portion of the first sidewall of the gate trench and a second well region having the second conductivity type that comprises a first portion of the second sidewall of the gate trench.
3 . The semiconductor device of claim 2 , wherein the first well region and the second well region each extend deeper into the semiconductor layer structure than the gate trench.
4 . (canceled)
5 . The semiconductor device of claim 2 , wherein the JFET region extends deeper into the semiconductor layer structure than the first well region and extends deeper into the semiconductor layer structure than the second well region.
6 . The semiconductor device of claim 2 , wherein the first well region comprises a first channeled ion implant well region and the second well region comprises a second channeled ion implant well region.
7 . The semiconductor device of claim 2 , wherein the first well region comprises a first deep well region that extends at least as deep into the semiconductor layer structure as the gate trench and a first shallow well region that is laterally adjacent the first deep well region and that does not extend as deep into the semiconductor layer structure as the first deep well region.
8 . The semiconductor device of claim 7 , wherein a peak doping concentration of the first deep well region is greater than a peak doping concentration of the first shallow well region.
9 . The semiconductor device of claim 2 , wherein the semiconductor layer structure further comprises a trench shield having the second conductivity type below the gate trench, wherein the first and second well regions extend deeper into the semiconductor layer structure than the trench shield.
10 . (canceled)
11 . The semiconductor device of claim 2 , wherein the first well region and the second well region are part of a continuous well region and the gate trench is one of a plurality of gate trenches that appear as islands in the semiconductor layer structure when the semiconductor device is viewed from above, and wherein the continuous well region forms sidewalls of each of the gate trenches.
12 . A semiconductor device, comprising:
a semiconductor layer structure that comprises a drift layer having a first conductivity type;
a gate trench that has a first sidewall and an opposed second sidewall in the semiconductor layer structure;
a gate oxide layer in the gate trench; and
a well region that comprises a channel region,
wherein the channel region extends at least as deep into the semiconductor layer structure as the gate trench, and
wherein the gate oxide layer directly contacts the drift region underneath outer portions of a bottom of the gate trench.
13 . The semiconductor device of claim 12 , wherein a lower surface of the well region has a substantially constant depth.
14 . The semiconductor device of claim 12 , wherein an upper portion of the drift layer structure further comprises a JFET region underneath the first gate trench, the JFET region having the first conductivity type and a doping concentrations that is higher than a doping concentration of a lower portion of the drift layer, wherein sidewalls of the JFET region are aligned with sidewalls of the first gate trench.
15 . The semiconductor device of claim 14 , wherein the JFET region extends deeper into the semiconductor layer structure than the well region.
16 - 18 . (canceled)
19 . The semiconductor device of claim 12 , wherein the well region is part of a continuous well region and the gate trench is one of a plurality of gate trenches that appear as islands in the semiconductor layer structure when the semiconductor device is viewed from above, and wherein the continuous well region forms sidewalls of each of the gate trenches.
20 . A semiconductor device, comprising:
a semiconductor layer structure; and
a gate trench in the semiconductor layer structure,
wherein the semiconductor layer structure comprises:
a drift layer having a first conductivity type, where an upper portion of the drift layer comprises a JFET region having the first conductivity type and a doping concentration that is higher than a doping concentration of a lower portion of the drift layer,
wherein first and second sidewalls of the JFET region are aligned with respective first and second sidewalls of the gate trench.
21 . The semiconductor device of claim 20 , wherein the semiconductor layer structure further comprises a first well region and a second well region that each extend deeper into the semiconductor layer structure than the gate trench.
22 . The semiconductor device of claim 21 , wherein the first and second well regions have substantially planar lower surfaces.
23 . (canceled)
24 . The semiconductor device of claim 21 , wherein the first well region comprises a first channeled ion implant well region and the second well region comprises a second channeled ion implant well region.
25 . The semiconductor device of claim 20 , wherein the semiconductor layer structure comprises a first well region comprises a first deep well region that extends at least as deep into the semiconductor layer structure as the gate trench and a first shallow well region that is laterally adjacent the first deep well region and that does not extend as deep into the semiconductor layer structure as the first deep well region.
26 . (canceled)
27 . The semiconductor device of claim 21 , wherein the semiconductor layer structure further comprises a trench shield having the second conductivity type below the gate trench, wherein the first and second well regions extend deeper into the semiconductor layer structure than the trench shield.
28 - 58 . (canceled)
59 . The semiconductor device of claim 20 , wherein the JPET region forms at least a portion of a bottom of the gate trench.