High power multilayer module having low inductance and fast switching for paralleling power devices
The disclosure is directed to a power module that includes at least one power substrate, a housing arranged on the at least one power substrate, and a first terminal electrically connected to the at least one power substrate. The first terminal includes a contact surface located above the housing at a first elevation. The power module includes a second terminal including a contact surface located above the housing at a second elevation different from the first elevation, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices electrically connected to the at least one power substrate.
1. A power module, comprising:
at least one power substrate;
a housing arranged on the at least one power substrate;
a first terminal electrically connected to the at least one power substrate;
a second terminal; and
a plurality of power devices electrically connected to the at least one power substrate,
wherein the first terminal, the second terminal, the at least one power substrate, and the plurality of power devices are configured such that current flows in a first direction from the first terminal across the at least one power substrate; and
wherein the first terminal, the second terminal, the at least one power substrate, and the plurality of power devices are further configured such that current flows in a second direction, opposite to the first direction, from the at least one power substrate to the second terminal to reduce impedance; and
wherein the power module is structured, arranged, and configured to have switching losses within a range of 0.05 milli-joules per amp (mJ/A) to 0.025 milli-joules per amp (mJ/A).
2. The power module of claim 1 , wherein the power module is structured, arranged, and configured to have switching losses within a range of 0.04 milli-joules per amp (mJ/A) to 0.025 milli-joules per amp (mJ/A).
3. The power module of claim 1 , wherein the power module is structured, arranged, and configured to have inductances to limit switching losses.
4. The power module of claim 1 , further comprising a third terminal electrically connected to the at least one power substrate,
wherein the first terminal, the second terminal, and the third terminal each comprise power terminals;
wherein the first terminal comprises a contact surface above the housing; and
wherein the second terminal comprises a contact surface above the housing.
5. The power module of claim 1 , wherein the power module is structured, arranged, and configured to increase a power device utilization within the power module; and
wherein the power device utilization is defined as a percentage calculated by a ratio of a power device area to a total power module area and the power device utilization comprises a range of 5-10%.
6. The power module of claim 1 , wherein the power module is structured, arranged, and configured to have a total stray inductance value of a critical power switching loop within a range of 12 nano-Henry (nH) to 2 nano-Henry (nH).
7. An inverter that comprises the power module of claim 1 , the inverter comprising at least one component comprising at least one of the following: at least one buss bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor.
8. A power system that comprises the power module of claim 1 , the power system comprising at least one component comprising at least one of the following: at least one buss bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor,
wherein the power system comprises at least one of the following: an inverter, a motor system, and a charging system.
9. A power module, comprising:
at least one power substrate;
a housing arranged on the at least one power substrate;
a first terminal electrically connected to the at least one power substrate;
a second terminal;
a third terminal electrically connected to the at least one power substrate; and
a plurality of power devices electrically connected to the at least one power substrate,
wherein the first terminal, the second terminal, the at least one power substrate, and the plurality of power devices are configured such that current flows in a first direction from the first terminal across the at least one power substrate; and
wherein the first terminal, the second terminal, the at least one power substrate, and the plurality of power devices are further configured such that current flows in a second direction, opposite to the first direction, from the at least one power substrate to the second terminal to reduce impedance; and
wherein the power module is structured, arranged, and configured to have switching losses within a range of 0.05 milli-joules per amp (mJ/A) to 0.025 milli-joules per amp (mJ/A).
10. The power module of claim 9 , wherein the power module is structured, arranged, and configured to have switching losses within a range of 0.04 milli-joules per amp (mJ/A) to 0.025 milli-joules per amp (mJ/A).
11. The power module of claim 9 , wherein the power module is structured, arranged, and configured to have inductances to limit switching losses.
12. The power module of claim 9 , wherein a total stray inductance value of a critical power switching loop within a range of 12 nano-Henry (nH) to 2 nano-Henry (nH).
13. The power module of claim 9 ,
wherein the power module is structured, arranged, and configured to increase a power device utilization of the power module; and
wherein the power device utilization is defined as a percentage calculated by a ratio of a power device area to a total power module area that comprises a range of 5-10%.
14. A power system that comprises the power module of claim 9 , the power system comprising at least one component comprising at least one of the following: at least one buss bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor,
wherein the power system comprises at least one of the following: an inverter, a motor system, and a charging system.
15. A power module, comprising:
at least one power substrate;
a housing arranged on the at least one power substrate;
a first terminal electrically connected to the at least one power substrate;
a second terminal; and
a plurality of power devices electrically connected to the at least one power substrate,
wherein the first terminal, the second terminal, the at least one power substrate, and the plurality of power devices are configured such that current flows in a first direction from the first terminal across the at least one power substrate; and
wherein the first terminal, the second terminal, the at least one power substrate, and the plurality of power devices are further configured such that current flows in a second direction, opposite to the first direction, from the at least one power substrate to the second terminal to reduce impedance; and
wherein the power module is structured, arranged, and configured to have switching losses less than 0.05 milli-joules per amp (mJ/A).
16. The power module of claim 15 , wherein the power module is structured, arranged, and configured to have switching losses within a range of 0.05 milli-joules per amp (mJ/A) to 0.025 milli-joules per amp (mJ/A).
17. The power module of claim 15 , wherein the power module is structured, arranged, and configured to have switching losses within a range of 0.04 milli-joules per amp (mJ/A) to 0.025 milli-joules per amp (mJ/A).
18. The power module of claim 15 , wherein the power module is structured, arranged, and configured to have inductances to limit switching losses.
19. The power module of claim 15 , further comprising a third terminal electrically connected to the at least one power substrate,
wherein the first terminal, the second terminal, and the third terminal each comprise power terminals.
20. The power module of claim 15 , wherein the power module is structured, arranged, and configured to increase a power device utilization within the power module; and
wherein the power device utilization is defined as a percentage calculated by a ratio of a power device area to a total power module area and the power device utilization comprises a range of 5-10%.
21. The power module of claim 15 , wherein the power module is structured, arranged, and configured to have a total stray inductance value of a critical power switching loop within a range of 12 nano-Henry (nH) to 2 nano-Henry (nH).
22. An inverter that comprises the power module of claim 15 , the inverter comprising at least one component comprising at least one of the following: at least one buss bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor.
23. A power system that comprises the power module of claim 15 , the power system comprising at least one component comprising at least one of the following: at least one buss bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor,
wherein the power system comprises at least one of the following: an inverter, a motor system, and a charging system.