Method and apparatus for insitu adjustment of wafer slip detection during work piece polishing
A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.
1. A method of detecting wafer slip during chemical mechanical planarization (CMP) polishing, comprising:
starting polishing of a substrate using a CMP system;
determining that the CMP system is in a steady-state condition that substantially represents a steady-state of a characteristic of a surface of a polishing pad experienced during polishing the substrate;
receiving a first signal from a slip sensor over a defined length of time in response to determining that the CMP system is in the steady-state condition, the slip sensor included in the CMP system comprising a carrier configured to retain the substrate and a platen supporting the polishing pad, the slip sensor configured to generate a signal indicative of the characteristic of the surface of the polishing pad;
obtaining a plurality of expected slip sensor values based on the first signal in response to determining that the CMP system is in the steady-state condition;
receiving a second signal from the slip sensor during CMP polishing;
comparing the second signal received from the slip sensor to the expected slip sensor values;
detecting wafer slip in response to the second signal received from the slip sensor during the CMP polishing differing from the expected slip sensor values by more than a threshold value; and
stopping all motion of components of the CMP system in response to detecting the wafer slip.
2. The method of claim 1 , wherein the slip sensor comprises an optical sensor configured to measure a reflectance of the surface of the polishing pad.
3. The method of claim 1 , wherein determining that the CMP system is in the steady-state condition is based on at least one of the following: rotation of the platen, rotation of the carrier, a pressure applied to the substrate, a pressure applied to a retaining ring configured to hold the substrate within the carrier, and/or a rate of fluid flow provided onto the polishing pad.
4. The method of claim 1 , wherein the defined length of time allows the slip sensor to measure each portion of the polishing pad that will be measured by the slip sensor during the CMP polishing.
5. The method of claim 1 , wherein stopping all motion of components of the CMP system in response to detecting the wafer slip comprising stopping motion of: the polishing pad, the platen, and/or the carrier.
6. The method of claim 1 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state of fluids present on the surface of the polishing pad.
7. The method of claim 1 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state texture of the surface of the polishing pad.
8. The method of claim 1 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state reflectance of the surface of the polishing pad.
9. A method, comprising:
starting polishing of a substrate using a polishing pad;
determining that a state of a characteristic of a surface of the polishing pad is in a steady-state condition during polishing the substrate;
receiving a first signal from a slip sensor over a defined length of time in response to determining that the surface of the polishing pad is in the steady-state condition, the slip sensor configured to generate a signal indicative of the characteristic of the surface of the polishing pad;
obtaining a plurality of expected slip sensor values based on the first signal in response to determining that the surface of the polishing pad is in the steady-state condition;
receiving a second signal from the slip sensor during the polishing of the substrate;
comparing the second signal received from the slip sensor to the expected slip sensor values;
detecting wafer slip in response to the second signal received from the slip sensor during the polishing of the substrate differing from the expected slip sensor values by more than a threshold value; and
stopping all motion of components involved in the polishing of the substrate in response to detecting the wafer slip.
10. The method of claim 9 , wherein the slip sensor comprises an optical sensor configured to measure a reflectance of the surface of the polishing pad.
11. The method of claim 9 , wherein determining that the surface of the polishing pad is in the steady-state condition is based on at least one of the following: rotation of a platen, rotation of a carrier, a pressure applied to the substrate, a pressure applied to a retaining ring configured to hold the substrate within the carrier, and/or a rate of fluid flow provided onto the polishing pad.
12. The method of claim 9 , wherein the defined length of time allows the slip sensor to measure each portion of the polishing pad that will be measured by the slip sensor during the polishing of the substrate.
13. The method of claim 9 , wherein stopping all motion of components involved in the polishing of the substrate in response to detecting the wafer slip comprising stopping motion of: the polishing pad, a platen, and/or a carrier.
14. The method of claim 9 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state of fluids present on the surface of the polishing pad.
15. The method of claim 9 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state texture of the surface of the polishing pad.
16. The method of claim 9 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state reflectance of the surface of the polishing pad.