Method and apparatus for insitu adjustment of wafer slip detection during work piece polishing
A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.
1. A chemical mechanical planarization (CMP) system, comprising:
a carrier configured to retain a substrate;
a platen supporting a polishing pad;
a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad; and
a processor configured to:
start polishing the substrate,
determine that the CMP system is in a steady-state condition that substantially represents a steady-state of the characteristic of the surface of the polishing pad experienced during polishing the substrate,
receive a first signal from the slip sensor over a defined length of time in response to determining that the CMP system is in the steady-state condition,
obtain a plurality of expected slip sensor values based on the first signal when the CMP system is in the steady-state condition,
receive a second signal from the slip sensor during CMP polishing,
compare the second signal received from the slip sensor to the expected slip sensor values, and
detect wafer slip in response to the second signal received from the slip sensor during the CMP polishing differing from the expected slip sensor values by more than a threshold value.
2. The system of claim 1 , wherein the slip sensor comprises an optical sensor configured to measure a reflectance of the surface of the polishing pad.
3. The system of claim 1 , wherein the determination that the CMP system is in the steady-state condition is further based on at least one of the following: rotation of the platen, rotation of the carrier, a pressure applied to the substrate, a pressure applied to a retaining ring configured to hold the substrate within the carrier, and/or a rate of fluid flow provided onto the polishing pad.
4. The system of claim 1 , wherein the processor is further configured to:
stop all motion of components of the CMP system in response to detecting the wafer slip.
5. The system of claim 4 , wherein stopping all motion of components of the CMP system in response to detecting the wafer slip comprising stopping motion of: the polishing pad, the platen, and/or the carrier.
6. The system of claim 1 , wherein the defined length of time allows the slip sensor to measure each portion of the polishing pad that will be measured by the slip sensor during the CMP polishing.
7. The system of claim 1 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state color of the surface of the polishing pad.
8. The system of claim 1 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state of fluids present on the surface of the polishing pad.
9. The system of claim 1 , wherein the steady-state of the characteristic of the surface of the polishing pad comprises a steady-state texture of the surface of the polishing pad.
10. A chemical mechanical planarization (CMP) system, comprising:
a carrier configured to retain a substrate;
a platen supporting a polishing pad;
a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad; and
a processor configured to:
start polishing the substrate,
determine that the CMP system is in a steady-state condition that substantially represents a steady-state of the characteristic of the surface of the polishing pad experienced during polishing the substrate,
receive the signal from the slip sensor over a defined length of time in response to determining that the CMP system is in the steady-state condition,
obtain a set of expected sensor values based on the signal when the CMP system is in the steady-state condition,
compare the signal received from the slip sensor to the set of expected sensor values during CMP polishing, and
detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the set of expected sensor values by more than a threshold value.
11. The system of claim 10 , wherein the slip sensor comprises an optical sensor configured to measure a reflectance of the surface of the polishing pad.
12. The system of claim 10 , wherein the processor is further configured to:
stop all motion of components of the CMP system in response to detecting the wafer slip.
13. The system of claim 10 , wherein the set length of time allows the slip sensor to measure each portion of the polishing pad that will be measured by the slip sensor during the CMP polishing.