Filter device
A filter device includes at least one first acoustic wave resonator and at least one second acoustic wave resonator. The at least one first acoustic wave resonator includes a first piezoelectric substrate and first and second IDT electrodes. The first piezoelectric substrate includes a piezoelectric layer with first and second main surfaces facing each other. The first IDT electrode is on the first main surface. The second IDT electrode is on the second main surface and faces the first IDT electrode. The at least one second acoustic wave resonator includes a second piezoelectric substrate and a third IDT electrode. The second piezoelectric substrate includes a piezoelectric layer with third and fourth main surfaces facing each other. The third IDT electrode is on one of the third and fourth main surfaces.
1 . A filter device comprising:
a plurality of acoustic wave resonators including first and second acoustic wave resonators each including:
at least one first acoustic wave resonator including a piezoelectric substrate and first and second IDT electrodes, the piezoelectric substrate including a piezoelectric layer with first and second main surfaces facing each other, the first IDT electrode being located on the first main surface, the second IDT electrode being located on the second main surface and facing the first IDT electrode; and
at least one second acoustic wave resonator including a piezoelectric substrate and a third IDT electrode, the piezoelectric substrate of the at least one second acoustic wave resonator including a piezoelectric layer with third and fourth main surfaces facing each other, the third IDT electrode being located on one of the third and fourth main surfaces; wherein
each of the first, second, and third IDT electrodes includes at least one pair of electrode fingers, and a number of the at least one pair of electrode fingers of the third IDT electrode is greater than a number of the at least one pair of electrode fingers of each of the first and second IDT electrodes.
2 . The filter device according to claim 1 , wherein the first and second acoustic wave resonators include the same piezoelectric substrate, the first main surface and the third main surface are an identical main surface, and the second main surface and the fourth main surface are an identical main surface.
3 . The filter device according to claim 1 , wherein the filter device includes a plurality of acoustic wave resonators; and
the filter device is a ladder filter including at least one series arm resonator and at least one parallel arm resonator.
4 . The filter device according to claim 3 , wherein at least one of the at least one series arm resonator is the first acoustic wave resonator.
5 . The filter device according to claim 3 , wherein at least one of the at least one parallel arm resonator is the second acoustic wave resonator.
6 . The filter device according to claim 3 , wherein at least one of the at least one parallel arm resonator is the first acoustic wave resonator.
7 . The filter device according to claim 3 , wherein at least one of the at least one series arm resonator is the second acoustic wave resonator.
8 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance higher than an average electrostatic capacitance of all the acoustic wave resonators is the second acoustic wave resonator, the second acoustic wave resonator being the series arm resonator.
9 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance higher than an average electrostatic capacitance of all the acoustic wave resonators is the second acoustic wave resonator, the second acoustic wave resonator being the parallel arm resonator.
10 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance higher than an average electrostatic capacitance of all the acoustic wave resonators is the first acoustic wave resonator, the first acoustic wave resonator being the parallel arm resonator.
11 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance higher than an average electrostatic capacitance of all the acoustic wave resonators is the first acoustic wave resonator, the first acoustic wave resonator being the series arm resonator.
12 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance lower than an average electrostatic capacitance of all the acoustic wave resonators is the second acoustic wave resonator, the second acoustic wave resonator being the series arm resonator.
13 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance lower than an average electrostatic capacitance of all the acoustic wave resonators is the second acoustic wave resonator, the second acoustic wave resonator being the parallel arm resonator.
14 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance lower than an average electrostatic capacitance of all the acoustic wave resonators is the first acoustic wave resonator, the first acoustic wave resonator being the series arm resonator and being divided in series or in parallel.
15 . The filter device according to claim 3 , wherein at least one of the acoustic wave resonators with an electrostatic capacitance lower than an average electrostatic capacitance of all the acoustic wave resonators is the first acoustic wave resonator, the first acoustic wave resonator being the parallel arm resonator and being divided in series or in parallel.
16 . The filter device according to claim 3 , further comprising:
an input terminal and an antenna terminal; wherein
a plurality of the series arm resonators are between the input terminal and the antenna terminal;
the plurality of the series arm resonators and the at least one parallel arm resonator are the acoustic wave resonators; and
at least one of the acoustic wave resonators of first and second stages from the input terminal is the second acoustic wave resonator.
17 . The filter device according to claim 3 , further comprising:
an input terminal and an antenna terminal; wherein
a plurality of the series arm resonators are between the input terminal and the antenna terminal;
the plurality of the series arm resonators and the at least one parallel arm resonator are the acoustic wave resonators; and
at least one of the acoustic wave resonators of first and second stages from the antenna terminal is the second acoustic wave resonator.
18 . The filter device according to claim 3 , further comprising:
an input terminal and an antenna terminal; wherein
a plurality of the series arm resonators are between the input terminal and the antenna terminal;
the plurality of the series arm resonators and the at least one parallel arm resonator are the acoustic wave resonators; and
at least one of the acoustic wave resonators of first and second stages from the input terminal is the first acoustic wave resonator.
19 . The filter device according to claim 3 , further comprising:
an input terminal and an antenna terminal; wherein
a plurality of the series arm resonators are between the input terminal and the antenna terminal;
the plurality of the series arm resonators and the at least one parallel arm resonator are the acoustic wave resonators; and
at least one of the acoustic wave resonators of first and second stages from the antenna terminal is the first acoustic wave resonator.
20 . The filter device according to claim 3 , wherein
the at least one series arm resonator includes an IDT electrode, the IDT electrode being one of the first IDT electrode, the second IDT electrode, and the third IDT electrode; and
among the at least one series arm resonator, a series arm resonator including an IDT electrode with a narrowest electrode finger pitch is the second acoustic wave resonator.
21 . The filter device according to claim 3 , wherein
the at least one parallel arm resonator includes an IDT electrode, the IDT electrode being one of the first IDT electrode, the second IDT electrode, and the third IDT electrode; and
among the at least one parallel arm resonator, a parallel arm resonator including an IDT electrode with a widest electrode finger pitch is the second acoustic wave resonator.
22 . The filter device according to claim 3 , wherein
the at least one series arm resonator includes an IDT electrode, the IDT electrode being one of the first IDT electrode, the second IDT electrode, and the third IDT electrode; and
among the at least one series arm resonator, a series arm resonator including an IDT electrode with a narrowest electrode finger pitch is the first acoustic wave resonator, the first acoustic wave resonator being divided in series or in parallel.
23 . The filter device according to claim 3 , wherein
the at least one parallel arm resonator includes an IDT electrode, the IDT electrode being one of the first IDT electrode, the second IDT electrode, and the third IDT electrode; and
among the at least one parallel arm resonator, a parallel arm resonator including an IDT electrode with a widest electrode finger pitch is the first acoustic wave resonator, the first acoustic wave resonator being divided in series or in parallel.
24 . The filter device according to claim 1 , wherein the third IDT electrode of at least one of the at least one second acoustic wave resonator is on the fourth main surface of the piezoelectric layer.
25 . The filter device according to claim 1 , further comprising:
a dielectric film on at least one of the first and second main surfaces of the piezoelectric layer of the first acoustic wave resonator and the third and fourth main surfaces of the piezoelectric layer of the second acoustic wave resonator such that the dielectric film overlaps at least one of the first IDT electrode, the second IDT electrode, and the third IDT electrode in a plan view.
26 . The filter device according to claim 25 , wherein the dielectric film includes silicon oxide.
27 . The filter device according to claim 1 , wherein
the piezoelectric substrate includes a high acoustic velocity material layer, the piezoelectric layer being located on the high acoustic velocity material layer; and
an acoustic velocity of a bulk wave propagating through the high acoustic velocity material layer is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
28 . The filter device according to claim 27 , wherein
the piezoelectric substrate includes a low acoustic velocity film between the high acoustic velocity material layer and the piezoelectric layer; and
an acoustic velocity of a bulk wave propagating through the low acoustic velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer.
29 . The filter device according to claim 28 , wherein the low acoustic velocity film includes silicon oxide.
30 . The filter device according to claim 27 , wherein
the piezoelectric substrate includes a support substrate; and
the high acoustic velocity material layer is a high acoustic velocity film, the high acoustic velocity film being located on the support substrate.
31 . The filter device according to claim 30 , wherein the high acoustic velocity film includes silicon nitride.
32 . The filter device according to claim 1 , wherein
each of the first IDT electrode and the second IDT electrode includes a plurality of electrode fingers;
at least some of the plurality of electrode fingers of the first IDT electrode and at least some of the plurality of electrode fingers of the second IDT electrode match each other in a plan view;
at least one pair of a plurality of pairs of the electrode fingers which match each other in a plan view are at an identical potential; and
the piezoelectric substrate includes a support substrate, the piezoelectric layer being located directly on the support substrate, the second IDT electrode being embedded in the support substrate.
33 . The filter device according to claim 1 , wherein
the piezoelectric substrate includes a support including a support substrate, the piezoelectric layer being located on the support; and
a hollow section is in the support, each of the first IDT electrode, the second IDT electrode, and the third IDT electrode at least partially overlapping the hollow section in a plan view.
34 . The filter device according to claim 30 , wherein the support substrate includes silicon.
35 . The filter device according to claim 1 , wherein
the piezoelectric substrate includes an acoustic reflective film, the piezoelectric layer being located on the acoustic reflective film; and
the acoustic reflective film includes at least one low acoustic impedance layer and at least one high acoustic impedance layer, the at least one low acoustic impedance layer having a relatively low acoustic impedance, the at least one high acoustic impedance layer having a relatively high acoustic impedance, the at least one low acoustic impedance layer and the at least one high acoustic impedance layer being alternately stacked on each other.
36 . The filter device according to claim 1 , wherein each of the first IDT electrode and the second IDT electrode includes a pair of busbars, the filter device further comprising:
a through-electrode that passes through the piezoelectric layer and that connects one of the busbars of the first IDT electrode and one of the busbars of the second IDT electrode with each other.
37 . The filter device according to claim 1 , wherein the piezoelectric layer includes one of lithium niobate or lithium tantalate.
38 . A filter device comprising:
a plurality of acoustic wave resonators including first and second acoustic wave resonators each including:
at least one first acoustic wave resonator including a piezoelectric substrate and first and second IDT electrodes, the piezoelectric substrate including a piezoelectric layer with first and second main surfaces facing each other, the first IDT electrode being located on the first main surface, the second IDT electrode being located on the second main surface and facing the first IDT electrode; and
at least one second acoustic wave resonator including a piezoelectric substrate and a third IDT electrode, the piezoelectric substrate of the at least one second acoustic wave resonator including a piezoelectric layer with third and fourth main surfaces facing each other, the third IDT electrode being located on one of the third and fourth main surfaces; wherein
when it is assumed that λ is a wavelength determined by an electrode finger pitch of an IDT electrode, a thickness of the piezoelectric layer is about 1λ or smaller, regardless of whether the electrode finger pitch of the first IDT electrode, the second IDT electrode, or the third IDT electrode is used to determine the wavelength.
39 . A filter device comprising:
a plurality of acoustic wave resonators including first and second acoustic wave resonators each including:
at least one first acoustic wave resonator including a piezoelectric substrate and first and second IDT electrodes, the piezoelectric substrate including a piezoelectric layer with first and second main surfaces facing each other, the first IDT electrode being located on the first main surface, the second IDT electrode being located on the second main surface and facing the first IDT electrode; and
at least one second acoustic wave resonator including a piezoelectric substrate and a third IDT electrode, the piezoelectric substrate of the at least one second acoustic wave resonator including a piezoelectric layer with third and fourth main surfaces facing each other, the third IDT electrode being located on one of the third and fourth main surfaces; wherein
each of the first, second, and third IDT electrodes includes at least one pair of electrode fingers that are interdigitated with each other, and an interdigital width of the third IDT electrode is wider than an interdigital width of each of the first and second IDT electrodes.