Diffusion barrier layer for source and drain structures to increase transistor performance
Various embodiments of the present disclosure are directed towards an integrated chip including a first transistor on a semiconductor substrate. The first transistor includes a first gate structure over the semiconductor substrate, a first pair of source/drain regions on opposing sides of the first gate structure, and a pair of diffusion barrier structures between the first pair of source/drain regions and a lower region of the semiconductor substrate. The first pair of source/drain regions comprise a first dopant. The diffusion barrier structures are co-doped with the first dopant and a second dopant different from the first dopant. A doping concentration of the first dopant within the first pair of source/drain regions is greater than a doping concentration of the first dopant within the diffusion barrier structures.
1. An integrated chip, comprising:
a semiconductor substrate; and
a first transistor on the semiconductor substrate and comprising a first gate structure over the semiconductor substrate, a first pair of source/drain regions on opposing sides of the first gate structure, and a pair of diffusion barrier structures between the first pair of source/drain regions and a lower region of the semiconductor substrate, wherein the first pair of source/drain regions comprise a first dopant, wherein the diffusion barrier structures are co-doped with the first dopant and a second dopant different from the first dopant, wherein a doping concentration of the first dopant within the first pair of source/drain regions is greater than a doping concentration of the first dopant within the diffusion barrier structures, wherein a doping concentration of the second dopant in the diffusion barrier structures continuously changes from upper surfaces of the diffusion barrier structures in a direction away from the first pair of source/drain regions.
2. The integrated chip of claim 1 , wherein the doping concentration of the second dopant within the diffusion barrier structures is less than the doping concentration of the first dopant within the diffusion barrier structures.
3. The integrated chip of claim 1 , further comprising:
a second transistor on the semiconductor substrate and laterally adjacent to the first transistor, wherein the second transistor comprises a second gate structure over the semiconductor substrate and a second pair of source/drain regions disposed on opposing sides of the second gate structure, wherein a bottom surface of the second pair of source/drain regions is below a bottom surface of the first pair of source/drain regions.
4. The integrated chip of claim 3 , wherein the first transistor is configured as an N-type transistor and the second transistor is configured as a P-type transistor.
5. The integrated chip of claim 3 , wherein the bottom surface of the second pair of source/drain regions is substantially coplanar with a bottom surface of the pair of diffusion barrier structures.
6. The integrated chip of claim 3 , wherein a height of the second pair of source/drain regions is greater than a height of the first pair of source/drain regions.
7. The integrated chip of claim 1 , wherein in a cross-sectional view the first pair of source/drain regions have a first shape and the diffusion barrier structures have a second shape different from the first shape.
8. The integrated chip of claim 1 , wherein the first gate structure comprises a gate electrode and a gate dielectric layer between the gate electrode and the semiconductor substrate, wherein a thickness of the pair of diffusion barrier structures is greater than a thickness of the gate dielectric layer.
9. The integrated chip of claim 1 , wherein the first dopant is an N-type dopant and the second dopant is carbon.
10. An integrated chip, comprising:
a fin structure extending vertically from a base region of a semiconductor substrate;
a gate electrode over the fin structure;
an epitaxial source/drain layer disposed over an upper surface of the semiconductor substrate and adjacent to the fin structure, wherein the epitaxial source/drain layer comprises a first dopant; and
a diffusion barrier layer between the epitaxial source/drain layer and the fin structure, wherein the diffusion barrier layer extends along the upper surface of the semiconductor substrate, wherein the diffusion barrier layer is co-doped with a second dopant and a third dopant, wherein the third dopant is different from the first and second dopants, wherein a top surface of the diffusion barrier layer is vertically above a top surface of the fin structure.
11. The integrated chip of claim 10 , wherein the diffusion barrier layer extends along a sidewall of the fin structure and a lower surface of the epitaxial source/drain layer.
12. The integrated chip of claim 10 , wherein a plurality of nanostructures overlie the fin structure, wherein the diffusion barrier layer extends along a sidewall of each nanostructure in the plurality of nanostructures.
13. The integrated chip of claim 10 , wherein a height of the diffusion barrier layer is greater than a height of the fin structure.
14. The integrated chip of claim 10 , wherein the top surface of the diffusion barrier layer is substantially coplanar with a top surface of the epitaxial source/drain layer.
15. The integrated chip of claim 10 , wherein the second dopant and the first dopant are each an N-type dopant.
16. An integrated chip, comprising:
a semiconductor substrate;
a first transistor on the semiconductor substrate and comprising a first gate structure over the semiconductor substrate, a pair of first source/drain regions on opposing sides of the first gate structure, and a pair of diffusion barrier structures between the pair of first source/drain regions and a lower region of the semiconductor substrate, wherein the pair of first source/drain regions comprise a first dopant having a first doping type, wherein the diffusion barrier structures contact and vertically separate bottommost surfaces of the first source/drain regions from the lower region by a non-zero distance; and
a second transistor on the semiconductor substrate and laterally adjacent to the first transistor, wherein the second transistor comprises a second gate structure over the semiconductor substrate and a pair of second source/drain regions disposed on opposing sides of the second gate structure, wherein the pair of second source/drain regions contact the semiconductor substrate and have a second doping type opposite the first doping type.
17. The integrated chip of claim 16 , wherein the pair of first source/drain regions and the pair of diffusion barrier layers comprise a first material, and the pair of second source/drain regions comprise a second material different from the first material.
18. The integrated chip of claim 16 , wherein a first thickness of the pair of first source/drain regions is less than a second thickness of the pair of second source/drain regions and is greater than a third thickness of the pair of diffusion barrier structures.
19. The integrated chip of claim 16 , wherein the lower region of the semiconductor substrate contacts bottoms of the diffusion barrier structures and has the second doping type.
20. The integrated chip of claim 16 , wherein the lower region of the semiconductor substrate is undoped or comprises the second doping type.