Integrated circuit device
Provided is an integrated circuit device including a substrate that has an active region defined by a plurality of device separation regions, a word line on the substrate and arranged in a word line trench that extends in a first horizontal direction, a bit line on the word line and extending in a second horizontal direction orthogonal to the first horizontal direction, a pad on the active region and having a horizontal width that is larger than the active region, and a bit line contact electrically connecting the bit line to the active region, wherein a level of a lowermost surface of the additional pad is at a same vertical level as a level of a lowermost surface of the bit line contact.
1 . An integrated circuit device comprising:
a substrate including an active region defined by a plurality of device separation regions;
a word line on the substrate and arranged in a word line trench that extends in a first horizontal direction;
a bit line on the word line and extending in a second horizontal direction orthogonal to the first horizontal direction;
a pad on the active region and having a horizontal width that is larger than the active region; and
a bit line contact electrically connecting the bit line to the active region,
wherein a lowermost surface of the pad is at a same vertical level as a lowermost surface of the bit line contact.
2 . The integrated circuit device of claim 1 , wherein a lowermost surface of the pad is at a same vertical level as an uppermost surface of the active region.
3 . The integrated circuit device of claim 1 , wherein at least a portion of one sidewall in the pad has a rounded profile, and another sidewall facing the one sidewall in the pad has a linear profile.
4 . The integrated circuit device of claim 1 , wherein at least a portion of an upper surface of the active region is in contact with the device separation regions.
5 . The integrated circuit device of claim 1 , wherein
at least a portion of the plurality of device separation regions comprises a first portion that is above a lowermost surface of the pad, and a second portion integral with the first portion and under the first portion, and
a step is defined on a sidewall of the first portion and a sidewall of the second portion.
6 . The integrated circuit device of claim 1 , wherein the pad has a monolayer structure including doped polysilicon.
7 . The integrated circuit device of claim 1 , wherein
the active region has a bar shape extending in an oblique direction with respect to the first and second horizontal directions, and
the pad is spaced apart from both ends of the bar shape.
8 . The integrated circuit device of claim 1 , further comprising:
an insulating pattern surrounding first and second sidewalls of the bit line contact, wherein
the insulating pattern is in contact with one sidewall of the pad.
9 . The integrated circuit device of claim 8 , wherein, in the pad, another sidewall facing one sidewall of the pad is in contact with the device separation regions.
10 . The integrated circuit device of claim 1 , further comprising:
a buried contact on the pad, wherein
a lowermost surface of the buried contact is above the lowermost surface of the pad and below an uppermost surface of the pad.
11 . The integrated circuit device of claim 10 , wherein the lowermost surface of the buried contact is above the uppermost surface of the active region and below an uppermost surface of the device separation regions.
12 . An integrated circuit device comprising:
a substrate including an active region defined by a plurality of device separation regions;
a word line on the substrate and arranged in a word line trench extending in a first horizontal direction;
a bit line on the word line and extending in a second horizontal direction orthogonal to the first horizontal direction;
a pad on the active region and having a horizontal width that is larger than the active region;
a bit line contact electrically connecting the bit line to the active region; and
a buried insulating layer on the word line and in the word line trench,
wherein a distance between a lowermost surface of the buried insulating layer and a lowermost surface of the pad is same as a distance between the lowermost surface of the buried insulating layer and a lowermost surface of the bit line contact.
13 . The integrated circuit device of claim 12 , wherein a distance between the lowermost surface of the buried insulating layer and a lowermost surface of the pad is same as a distance between the lowermost surface of the buried insulating layer and an uppermost surface of the active region.
14 . The integrated circuit device of claim 12 , further comprising:
a buried contact on the pad, wherein
a lowermost surface of the buried contact is above the lowermost surface of the pad and below an uppermost surface of the pad.
15 . The integrated circuit device of claim 14 , further comprising
a spacer on first and second sidewalls of the pad, wherein
the lowermost surface of the buried contact is above the lowermost surface of the spacer and below an uppermost surface of the spacer.
16 . The integrated circuit device of claim 15 , further comprising
an insulating pattern surrounding a first sidewall and a second sidewall of the bit line contact, wherein
the insulating pattern is in contact with one sidewall of the pad and one sidewall of the spacer.
17 . The integrated circuit device of claim 12 , wherein
at least a portion of the plurality of device separation regions comprises a first portion above a lowermost surface of the pad, and a second portion integral with the first portion and under the first portion, and
a step is defined on a sidewall of the first portion and a sidewall of the second portion.
18 . The integrated circuit device of claim 12 , wherein the pad has a monolayer structure including doped polysilicon.
19 . An integrated circuit device comprising:
a substrate including an active region defined by a plurality of device separation regions;
a word line on the substrate and arranged in a word line trench that extends in a first horizontal direction;
a bit line on the word line and extending in a second horizontal direction orthogonal to the first horizontal direction;
a pad of a monolayer structure including doped polysilicon, which is on the active region and has a horizontal width that is larger than the active region; and
a bit line contact electrically connecting the bit line to the active region,
wherein at least a portion of an upper surface of the active region contacts the device separation regions,
a lowermost surface of the pad is at a same vertical level as a lowermost surface of the bit line contact and of an uppermost surface of the active region, and
at least a portion of one sidewall in the pad has a rounded profile, and another sidewall facing the one sidewall in the pad has a linear profile.
20 . The integrated circuit device of claim 19 , further comprising:
an insulating pattern surrounding a first sidewall and a second sidewall of the bit line contact, and the insulating pattern contacting one sidewall of the pad; and
a buried contact on the pad, wherein
a lowermost surface of the buried contact is above the lowermost surface of the pad, is below an uppermost surface of the pad, is above the uppermost surface of the active region, and is below an uppermost surface of the device separation regions, and
in the pad, another sidewall facing one sidewall of the pad is in contact with the device separation regions.