Semiconductor devices with single-photon avalanche diodes, light scattering structures, and multiple isolation structures
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.
1. A semiconductor device comprising:
a substrate having a thickness;
a photosensitive element in the substrate;
a first isolation structure in the substrate that forms a first ring around the photosensitive element; and
a second isolation structure in the substrate that forms a second ring around the photosensitive element, wherein the second isolation structure has a depth that is less than the thickness, wherein the second isolation structure comprises a trench in the substrate, wherein the trench has first and second opposing sides connected by a third side, and wherein the second isolation structure comprises a p-type doped liner adjacent to the first, second, and third sides of the trench.
2. The semiconductor device defined in claim 1 , wherein the first isolation structure comprises an additional trench and a metal filler in the additional trench.
3. The semiconductor device defined in claim 2 , wherein the metal filler comprises tungsten.
4. The semiconductor device defined in claim 1 , wherein the first isolation structure comprises an additional trench and a light absorbing filler in the additional trench.
5. The semiconductor device defined in claim 4 , wherein the second isolation structure comprises a low-index filler in the trench.
6. The semiconductor device defined in claim 1 , wherein the second isolation structure is interposed between the first isolation structure and the photosensitive element.
7. The semiconductor device defined in claim 6 , wherein the first isolation structure is configured to absorb light and wherein the second isolation structure is configured to reflect light.
8. The semiconductor device defined in claim 6 , wherein the first isolation structure is a front side isolation structure and wherein the second isolation structure is a backside isolation structure.
9. The semiconductor device defined in claim 1 , further comprising:
a plurality of light scattering structures in the substrate over the photosensitive element.
10. The semiconductor device defined in claim 1 , wherein the p-type doped liner is coupled to a bias voltage and serves as an anode contact for the photosensitive element.
11. The semiconductor device defined in claim 1 , wherein the first isolation structure forms the first ring around the photosensitive element within a given plane, wherein the second isolation structure forms the second ring around the photosensitive element within the given plane, wherein the second isolation structure is interposed between the first isolation structure and the photosensitive element within the given plane, and wherein the first isolation structure extends completely through the thickness of the substrate.
12. A semiconductor device comprising:
a substrate;
a photosensitive element in the substrate;
a first ring-shaped isolation structure having a central opening, wherein the photosensitive element is in the central opening; and
a second ring-shaped isolation structure that surrounds the photosensitive element and that is in the central opening, wherein the second ring-shaped isolation structure is interposed between the photosensitive element and the first ring-shaped isolation structure and wherein the second ring-shaped isolation structure is more reflective than the first ring-shaped isolation structure.
13. The semiconductor device defined in claim 12 , wherein the substrate has a thickness, wherein the first ring-shaped isolation structure extends completely through the thickness of the substrate, and wherein the second ring-shaped isolation structure has a depth that is less than the thickness.
14. The semiconductor device defined in claim 13 , wherein the substrate has first and second opposing sides and wherein the semiconductor device further comprises:
a plurality of light scattering structures in the first side of the substrate over the photosensitive element, wherein the second ring-shaped isolation structure extends from the second side of the substrate towards the first side of the substrate.
15. The semiconductor device defined in claim 12 , wherein the first ring-shaped isolation structure comprises a trench and a metal filler in the trench and wherein the metal filler is coupled to a bias voltage and serves as an anode contact for the photosensitive element.
16. The semiconductor device defined in claim 12 , wherein the second ring-shaped isolation structure comprises a trench in the substrate and a p-type doped liner adjacent to the trench and wherein the p-type doped liner is coupled to a bias voltage and serves as an anode contact for the photosensitive element.
17. A semiconductor device comprising:
a substrate;
a photosensitive element in the substrate;
a first isolation structure in the substrate that forms a first ring around the photosensitive element; and
a second isolation structure in the substrate that forms a second ring around the photosensitive element, wherein the first isolation structure comprises a metal filler and a passivation coating that is interposed between the metal filler and the substrate, and wherein the passivation coating has an opening where the metal filler directly contacts the substrate.
18. The semiconductor device defined in claim 17 , wherein the first isolation structure extends completely through a thickness of the substrate and wherein the second isolation structure extends only partially through the thickness of the substrate.
19. The semiconductor device defined in claim 17 , wherein the photosensitive element is a single-photon avalanche diode.
20. The semiconductor device defined in claim 17 , wherein the metal filler is an anode contact for the photosensitive element, wherein the first isolation structure forms the first ring around the photosensitive element within a given plane, wherein the second isolation structure forms the second ring around the photosensitive element within the given plane, and wherein the second isolation structure is interposed between the first isolation structure and the photosensitive element within the given plane.