Warpage modulation through implantation and the structures thereof
A method includes depositing a dielectric layer on a package component having a first warpage, and performing an implantation process to implant the dielectric layer with a stress modulation dopant. After the implantation process, the package component has a second warpage smaller than the first warpage.
1 . A method comprising:
depositing a dielectric layer on a package component having a first warpage; and
performing an implantation process to implant the dielectric layer with a stress modulation dopant, wherein after the implantation process, the package component has a second warpage smaller than the first warpage.
2 . The method of claim 1 , wherein the implantation process results in the package component to warp to an opposite direction than before the implantation process.
3 . The method of claim 1 , wherein the implantation process is a blanket implantation process.
4 . The method of claim 3 further comprising:
forming a via penetrating through the dielectric layer;
forming a bond layer over and contacting the dielectric layer; and
forming a bond pad in the bond layer and over and contacting the via.
5 . The method of claim 1 , wherein the implantation process is a selective implantation process, with a first portion of the dielectric layer being implanted, and wherein in the implantation process, a second portion of the dielectric layer is masked from the implantation process.
6 . The method of claim 5 further comprising:
measuring the first warpage of an additional package component having an identical structure as the package component; and
determining locations of the dielectric layer to be implanted, wherein the determining the locations is based on the first warpage, and wherein in the implantation process, the locations are implanted.
7 . The method of claim 5 , wherein parts of the locations that are implanted are in corner regions of the package component, and wherein a center part of the package component is masked from the implantation process.
8 . The method of claim 5 , wherein the package component comprises metal lines in the dielectric layer, and wherein the metal lines are masked from the implantation process.
9 . The method of claim 1 , wherein the stress modulation dopant is selected from the group consisting of Ge, B, P, As, Ga, H, Y, Zr, Xe, In, Sb, Si, N, O, C, F, Ne, He, Ar, Kr, Cl, S, Se, Sn, Al, In, Er, Yb, and combinations thereof.
10 . The method of claim 9 , wherein the stress modulation dopant is selected from the group consisting of Ge, B, P, As, Ga, and combinations thereof.
11 . The method of claim 1 , wherein the package component comprises active devices, and wherein the dielectric layer is on a front side of the package component.
12 . The method of claim 1 , wherein the package component comprises active devices, and wherein the dielectric layer is on a backside of the package component.
13 . A method comprising:
forming a first dielectric layer;
forming a second dielectric layer over and contacting the first dielectric layer;
performing a doping process on the second dielectric layer, so that the second dielectric layer comprises:
a first portion comprising a stress modulation dopant therein, wherein the first portion of the stress modulation dopant is doped through the doping process to have a first peak concentration; and
a second portion, wherein the second portion of the stress modulation dopant has a second peak concentration in the second dielectric layer, and the second peak concentration is lower than the first peak concentration; and
a third dielectric layer over the second dielectric layer.
14 . The method of claim 13 , wherein the doping process comprises an implantation process to implant the stress modulation dopant into the first portion of the second dielectric layer.
15 . The method of claim 13 , wherein the stress modulation dopant is selected from the group consisting of Ge, B, P, As, Ga, H, Y, Zr, Xe, In, Sb, Si, N, O, C, F, Ne, He, Ar, Kr, Cl, S, Se, Sn, Al, In, Er, Yb, and combinations thereof.
16 . The method of claim 15 , wherein the stress modulation dopant is selected from the group consisting of Ge, B, P, As, Ga, and combinations thereof.
17 . The method of claim 13 further comprising forming a metal line in the second portion of the second dielectric layer.
18 . The method of claim 13 , wherein the first dielectric layer, the second dielectric layer, and the third dielectric layer are comprised in a die, and wherein the first portion is in a corner region of the die, and the second portion is in a center region of the die.
19 . A method comprising:
forming active devices in a substrate;
forming an interconnect structure over the active devices, wherein the interconnect structure are formed using processes comprising:
forming a passivation layer comprising first portions and second portions, wherein the first portions are implanted with a stress modulation dopant, and the second portions have at least lower concentrations of the stress modulation dopant than the first portions; and
forming a plurality of conductive features in the passivation layer, wherein each of the plurality of conductive features is encircled by one of the second portions of the passivation layer, and is spaced apart from the first portions; and
forming a bond layer over the passivation layer.
20 . The method of claim 19 , wherein peak concentrations of the stress modulation dopant are in the passivation layer, and in an upward direction and a downward direction starting from where the peak concentrations occur, concentrations of the stress modulation dopant gradually reduce.