Granted Patent B2

US 12,374,586 · App. 18/508,801 · Granted Jul 29, 2025

Inventors: Peng Suo (Singapore, SG); Ying W. Wang (Singapore, SG); Guan Huei See (Singapore, SG); Chang Bum Yong (Singapore, SG); Arvind Sundarrajan (Singapore, SG)

Assignee: Applied Materials, Inc.

H01L21/76898H01L21/2855H01L21/288H01L21/30625H01L21/308

Abstract

Claims (36)

1. A method of forming a through-silicon via structure, comprising:

forming a trench in a first side of a silicon substrate, the trench surrounding a portion of the silicon substrate;

filling the trench with a dielectric material;

forming a hole in the first side of silicon substrate by removing the portion of the silicon substrate surrounded by the trench;

depositing a conductive material to fill the hole, the hole having a lateral dimension ranging from 10 μm to 50 μm; and

grinding or polishing the silicon substrate on the first side and a second side opposite the first side, wherein the grinding or polishing exposes the conductive material and the dielectric material on the first side and the second side.

2. The method of claim 1 , wherein a ratio between the lateral dimension of the hole and a thickness of the substrate is between 10:1500 and 50:50.

3. The method of claim 2 , wherein a thickness of the substrate is between 50 μm to 1500 μm.

4. The method of claim 1 , wherein the trench is formed via a silicon etch process.

5. The method of claim 4 , wherein the trench has an annular shape.

6. The method of claim 1 , wherein the dielectric material comprises an epoxy resin having a ceramic filler.

7. The method of claim 6 , wherein the dielectric material is filled into the trench by applying and laminating a dielectric film over the trench.

8. The method of claim 1 , wherein the portion of the silicon substrate is removed via a silicon etch process.

9. The method of claim 1 , wherein the conductive material is plated via electroless plating, or physical vapor deposition (PVD) and electrochemical deposition (ECD).

10. A method of forming a through-silicon via structure, comprising:

forming a trench in a first side of a silicon substrate, the trench surrounding a portion of the silicon substrate;

laminating a dielectric film onto the first side of the silicon substrate, the lamination of the dielectric film causing a dielectric material of the dielectric film to fill the trench;

grinding or polishing the first side of the silicon substrate to remove the dielectric film disposed outside of the trench;

removing the portion of the silicon substrate surrounded by the trench to form a hole through the dielectric material in the trench, the hole exposing an inner surface of the dielectric material and having a lateral dimension ranging from 10 μm to 50 μm;

depositing a conductive material on the first side of the silicon substrate, the conductive material extending through the hole; and

grinding or polishing the first side of the silicon substrate and a second side opposite the first side, wherein the grinding or polishing removes the conductive material disposed outside of the hole and exposes the remaining conductive material and the dielectric material on the first side and the second side.

11. The method of claim 10 , wherein a ratio between the lateral dimension of the hole and a thickness of the substrate is between 10:1500 and 50:50.

12. The method of claim 11 , wherein a thickness of the substrate is between 50 μm to 1500 μm.

13. The method of claim 12 , wherein the trench is formed via a silicon etch process utilizing a resist film.

14. The method of claim 13 , wherein the trench has an annular shape.

15. The method of claim 13 , wherein the portion of the silicon substrate is removed via a second silicon etch process utilizing a resist film applied to the silicon substrate after removing the dielectric film disposed outside of the trench.

16. The method of claim 10 , wherein the dielectric material comprises an epoxy resin having a ceramic filler.

17. The method of claim 16 , wherein the lamination is performed at a temperature of less than about 200° C.

18. The method of claim 10 , wherein the conductive material is plated via an electroless plating, or physical vapor deposition (PVD) and electrochemical deposition (ECD).

19. A method of forming a through-silicon via structure, comprising:

forming a trench in a first side of a silicon substrate, the trench surrounding a portion of the silicon substrate;

filling the trench with a dielectric material, the dielectric material comprising an epoxy resin having a ceramic filler including particles that range in size between 40 nm and 1.5 μm;

removing the portion of the silicon substrate surrounded by the trench to expose an inner surface of the dielectric material;

depositing a conductive material on the inner surface of the dielectric material; and

grinding or polishing the silicon substrate on the first side and a second side opposite the first side, wherein the grinding or polishing exposes the conductive material and the dielectric material on the first side and the second side.

20. The method of claim 19 , wherein the particles range in size from 80 nm to 1 μm.

Assignments (1)

Continuity (3)

References Cited (400)