Smart erase inhibit
Technology to prevent over-erase in NAND memory. Each bit line involved in erase is connected to multiple NAND strings. Erase verify of each NAND string is performed at a final target level and a level that is somewhat higher than the final target level. Bit lines are placed into three groups based on the erase status of the NAND strings connected to the bit line. The erase voltage applied to the bit lines in the next erase loop depends on the group in which the bit line was placed.
1 . An apparatus comprising:
a control circuit configured to connect to a memory structure having NAND strings having memory cells, the control circuit configured to:
apply a first erase voltage to a plurality of bit lines during a first erase loop, wherein each bit line is connected to a group of NAND strings being erased, the bit lines include a first bit line connected to a first group of NAND strings being erased and a second bit line connected to a second group of NAND strings being erased;
verify each NAND string being erased in the first erase loop with respect to a first erase verify level and a second erase verify level that has a greater magnitude than the first erase verify level; and
responsive to a determination that at least one NAND string in the first group has a threshold voltage (Vt) above the second erase verify level and that all NAND strings in the second group have a Vt below the second erase verify level but at least one NAND string in the second group has a Vt above the first erase verify level:
apply a second erase voltage to the first bit line and a third erase voltage to the second bit line in a second erase loop that immediately follows the first erase loop, wherein the third erase voltage has a lower magnitude than the second erase voltage.
2 . The apparatus of claim 1 , wherein:
the second erase voltage erases the memory cells in NAND strings in the first group at a first speed; and
the third erase voltage erases the memory cells in NAND strings in the second group at a second speed that is slower than the first speed.
3 . The apparatus of claim 1 , wherein the control circuit is further configured to:
responsive to a determination that all NAND strings in a third group of NAND strings connected to a third bit line of the plurality of bit lines have a Vt below the first erase verify voltage-level responsive to the first erase voltage:
apply an erase inhibit voltage to the third bit line in the second erase loop while applying the second erase voltage to the first bit line and the third erase voltage to the second bit line, wherein the erase inhibit voltage inhibits erase of the memory cells in the third group of NAND strings.
4 . The apparatus of claim 3 , wherein the control circuit is further configured to:
apply a gate voltage to gates of transistors on the second group of NAND strings and the third group of NAND strings while applying the third erase voltage to the second bit line and while applying the erase inhibit voltage to the third bit line, wherein:
a first voltage difference between the third erase voltage and the gate voltage generates a gate induced drain leakage (GIDL) current in the NAND strings in the second group; and
a second voltage difference between the erase inhibit voltage and the gate voltage results in no GIDL current in the NAND strings in the third group.
5 . The apparatus of claim 4 , wherein the control circuit is further configured to:
apply the gate voltage to gates of transistors on the first group of NAND strings while applying the second erase voltage to the first bit line, wherein:
a third voltage difference between the second erase voltage and the gate voltage generates a GIDL current in the NAND strings in the first group that is greater than the GIDL current in the NAND strings in the second group.
6 . The apparatus of claim 1 , wherein the control circuit is further configured to:
apply a gate voltage to gates of transistors on the first group of NAND strings and the second group of NAND strings while applying the second erase voltage to the first bit line and while applying the third erase voltage to the second bit line, wherein:
a first voltage difference between the second erase voltage and the gate voltage generates a first amount of GIDL current in the NAND strings in the first group; and
a second voltage difference between the third erase voltage and the gate voltage generates a second amount of GIDL current in the NAND string in the second group, the second amount of GIDL current being less than the first amount of GIDL current.
7 . The apparatus of claim 1 , wherein the control circuit is further configured to:
place each bit line into either a normal erase group, a slow erase group, or an erase inhibit group based on verifying each NAND string in the first erase loop with respect to the first erase verify level and the second erase verify level.
8 . The apparatus of claim 1 , wherein the first erase verify level is a final target erase level.
9 . The apparatus of claim 1 , wherein the second erase voltage has a greater magnitude than the first erase voltage.
10 . The apparatus of claim 1 , wherein the third erase voltage has a lower magnitude than the first erase voltage.
11 . A method for operating memory, the method comprising:
applying a first erase pulse to a first bit line connected to a first group of NAND strings having memory cells and also to a second bit line connected to a second group of NAND strings having memory cells;
verifying each NAND string in the first group and each NAND string in the second group with respect to a final target erase verify voltage and an erase high verify voltage greater than the final target erase verify voltage in response to applying the first erase pulse to the first bit line and to the second bit line; and
applying a second erase pulse to the first bit line responsive to at least one NAND string in the first group failing erase with respect to the erase high verify voltage while applying a third erase pulse to the second bit line responsive to all NAND strings in the second group passing erase with respect to the erase high verify voltage but at least one NAND string in the second group failing erase with respect to the final target erase verify voltage, wherein the second erase pulse erases the memory cells in the NAND strings in the first group at a first speed and the third erase pulse erases the memory cells in the NAND strings in the second group at a second speed that is slower than the first speed.
12 . The method of claim 11 , further comprising:
applying the first erase pulse to a third bit line connected to a third group of NAND strings having memory cells while applying the first erase pulse to the first bit line and to the second bit line;
verifying each NAND string in the third group with respect to the final target erase verify voltage and the erase high verify voltage in response to applying the first erase pulse to the third bit line; and
applying an erase inhibit voltage to the third bit line responsive to all NAND strings in the third group passing erase with respect to the final target erase verify voltage, wherein the erase inhibit voltage inhibits erase of the memory cells in the third group of NAND strings, wherein the erase inhibit voltage is applied to the third bit line while applying the second erase pulse to the first bit line and while applying the third erase pulse to the second bit line.
13 . The method of claim 12 , further comprising:
applying a gate induced drain leakage (GIDL) voltage to gates of transistors on the second group of NAND strings that are adjacent to the second bit line while applying the third erase pulse to the second bit line; and
applying the GIDL voltage to gates of transistors on the third group of NAND strings that are adjacent to the third bit line while applying the erase inhibit voltage to the third bit line, wherein:
a first voltage difference between the third erase pulse and the GIDL voltage generates a GIDL current in the NAND strings in the second group to erase the memory cells in the NAND strings in the second group at the second speed; and
a second voltage difference between the erase inhibit voltage and the GIDL voltage does not generate GIDL current in the NAND strings in the third group in order to inhibit erase in the memory cells in the NAND strings in the third group.
14 . The method of claim 11 , further comprising:
applying a gate induced drain leakage (GIDL) voltage to gates of transistors on the first group of NAND strings that are adjacent to the first bit line while applying the second erase pulse to the first bit line; and
applying the GIDL voltage to gates of transistors on the second group of NAND strings that are adjacent to the second bit line while applying the third erase pulse to the second bit line, wherein:
a first voltage difference between the second erase pulse and the GIDL voltage generates a first amount of GIDL current in the NAND strings in the first group; and
a second voltage difference between the third erase pulse and the GIDL voltage generates a second amount of GIDL current in the NAND strings in the second group, the second amount of GIDL current being less than the first amount of GIDL current.
15 . A non-volatile storage system comprising:
a three-dimensional memory structure having blocks comprising NAND strings, the memory structure having a plurality of bit lines connected to the NAND strings, wherein each block has multiple sub-blocks with each sub-block containing a different group of NAND strings, each bit line connects to one NAND string in each sub-block; and
a control circuit in communication with the memory structure, the control circuit configured to:
apply a first erase voltage to the plurality of bit lines while applying a gate induced drain leakage (GIDL) voltage to a select line connected to NAND strings in a selected block to generate a GIDL current in the NAND strings in the selected block, the select line adjacent to the bit lines;
verify each NAND string in the block with respect to a target erase verify voltage and a high erase verify voltage in response to applying the first erase voltage to the plurality of bit lines while applying the GIDL voltage to the select line, the high erase verify voltage is greater than the target erase verify voltage; and
place each bit line of the plurality of bit lines into one of a normal erase group, a slow erase group, and an erase inhibit group based on verifying each NAND string in the block at the target erase verify voltage and the high erase verify voltage.
16 . The non-volatile storage system of claim 15 , wherein the control circuit is further configured to:
place bits lines of the plurality of bit lines for which no connected NAND strings has a threshold voltage (Vt) above the high erase verify voltage but at least one connected NAND string has a Vt above the target erase verify voltage into the slow erase group.
17 . The non-volatile storage system of claim 16 , wherein the control circuit is further configured to:
place bits lines of the plurality of bit lines for which at least one connected NAND strings has a Vt above the high erase verify voltage into the normal erase group; and
place bits lines of the plurality of bit lines for which all connected NAND strings have a Vt below the target erase verify voltage into the erase inhibit group.
18 . The non-volatile storage system of claim 15 , wherein the control circuit is further configured to:
apply a second erase voltage to the bit lines in the normal erase group while applying a third erase voltage to the bit lines in the slow erase group while applying an erase inhibit voltage to the bit lines in the erase inhibit group while applying the GIDL voltage to the select line connected to the NAND strings in the selected block, wherein the second erase voltage is greater than the third erase voltage, and the third erase voltage is greater than the erase inhibit voltage.
19 . The non-volatile storage system of claim 18 , wherein:
the second erase voltage erases memory cells on NAND strings connected to the bit lines in the normal erase group at a first speed;
the third erase voltage erases memory cells on NAND strings connected to the bit lines in the slow erase group at a second speed that is slower than the first speed; and
the erase inhibit voltage inhibits erase of memory cells on NAND strings connected to the bit lines in the erase inhibit group.
20 . The non-volatile storage system of claim 19 , wherein:
the second erase voltage in combination with the GIDL voltage generates a first amount of GIDL current in the NAND strings connected to the bit lines in the normal erase group;
the third erase voltage in combination with the GIDL voltage generates a second amount of GIDL current in the NAND strings connected to the bit lines in the slow erase group; and
the erase inhibit voltage in combination with the GIDL voltage does not generate any GIDL current in the NAND strings connected to the bit lines the erase inhibit group to thereby inhibit erase.