IP Library › Granted Patent US 12,402,429
Granted Patent B2
US 12,402,429 · App. 18/525,991 · Granted Aug 26, 2025

Semiconductor packages with an array of single-photon avalanche diodes split between multiple semiconductor dice

Inventor: Brian Patrick McGarvey (Templemartin, IE)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H10F39/8063H10F30/225H10F39/804H10F77/959
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Quick Facts
Patent No.
US 12,402,429
App. No.
18/525,991
Granted
Aug 26, 2025
Kind
B2
Abstract

A semiconductor package may include a line array of single-photon avalanche diodes (SPADs). The line array of single-photon avalanche diodes may be split between multiple silicon dice. Each silicon die may be overlapped by at least one lens to focus light away from gaps between the dice and towards the single-photon avalanche diodes. There may be one single-photon avalanche diode for each silicon die or multiple single-photon avalanche diodes for each silicon die. When there are multiple single-photon avalanche diodes for each silicon die, lenses may be formed over only the edge single-photon avalanche diodes.

Claims (26)

1. A semiconductor package comprising:

a plurality of semiconductor dice, wherein each one of the plurality of semiconductor dice has a first edge, a second edge, a first single-photon avalanche diode adjacent to the first edge, and a second single-photon avalanche diode adjacent to the second edge; and

a plurality of lenses, wherein the first and second single-photon avalanche diodes of each semiconductor die are overlapped by respective first and second lenses of the plurality of lenses, wherein each one of the plurality of semiconductor dice has a third single-photon avalanche diode between the first and second single-photon avalanche diodes and wherein a center of the third single-photon avalanche diode is not overlapped by any lens of the plurality of lenses.

2. The semiconductor package defined in claim 1 , wherein each one of the plurality of semiconductor dice includes at least four respective single-photon avalanche diodes.

3. The semiconductor package defined in claim 1 , wherein the plurality of semiconductor dice forms a line array of single-photon avalanche diodes.

4. The semiconductor package defined in claim 3 , wherein the line array extends in a first direction and wherein there is a respective gap in the first direction between each adjacent pair of semiconductor dice.

5. The semiconductor package defined in claim 4 , wherein each gap is overlapped by at least one of the plurality of lenses in a second direction that is orthogonal to the first direction.

6. The semiconductor package defined in claim 4 , wherein each gap is overlapped by a respective two of the plurality of lenses in a second direction that is orthogonal to the first direction.

7. The semiconductor package defined in claim 3 , wherein the line array of single-photon avalanche diodes includes time-of-flight circuitry.

8. The semiconductor package defined in claim 1 , wherein each one of the plurality of semiconductor dice has a fourth single-photon avalanche diodes between the first and second single-photon avalanche diodes, wherein the first lens overlaps all of the first single-photon avalanche diode and some but not all of the third single-photon avalanche diode, and wherein the second lens overlaps all of the second single-photon avalanche diode and some but not all of the fourth single-photon avalanche diode.

9. The semiconductor package defined in claim 1 , further comprising:

a package substrate, wherein the plurality of semiconductor dice is mounted to the package substrate.

10. The semiconductor package defined in claim 1 , further comprising:

a package lid that is formed from a single piece of transparent material that overlaps the plurality of semiconductor dice.

11. The semiconductor package defined in claim 10 , wherein the transparent material comprises a material selected from the group consisting of: glass and epoxy.

12. A semiconductor package comprising:

a plurality of semiconductor dice that forms a line array of single-photon avalanche diodes, wherein each one of the plurality of semiconductor dice has a first edge, a second edge, a first edge single-photon avalanche diode adjacent to the first edge, a second edge single-photon avalanche diode adjacent to the second edge, and a plurality of central single-photon avalanche diodes interposed between the first and second edge single-photon avalanche diodes; and

a plurality of lenses, wherein the first and second edge single-photon avalanche diodes of each semiconductor die are overlapped by respective first and second lenses of the plurality of lenses, wherein the line array extends in a first direction, and wherein, for each semiconductor die of the plurality of semiconductor dice, the first and second edge single-photon avalanche diodes have a greater size in the first direction than all of the central single-photon avalanche diodes.

13. The semiconductor package defined in claim 12 , further comprising:

a package substrate, wherein the plurality of semiconductor dice is mounted to the package substrate; and

a package lid that is formed from a single piece of transparent material that overlaps the plurality of semiconductor dice.

14. The semiconductor package defined in claim 13 , wherein there is a respective gap in the first direction between each adjacent pair of semiconductor dice.

15. The semiconductor package defined in claim 14 , wherein each gap is overlapped by at least one of the plurality of lenses in a second direction that is orthogonal to the first direction.

16. The semiconductor package defined in claim 14 , wherein each gap is overlapped by a respective two of the plurality of lenses in a second direction that is orthogonal to the first direction.

17. The semiconductor package defined in claim 12 , wherein the first lens overlaps all of the first edge single-photon avalanche diode and some but not all of a first central single-photon avalanche diode of the plurality of central single-photon avalanche diodes, and wherein the second lens overlaps all of the second edge single-photon avalanche diode and some but not all of a second central single-photon avalanche diode of the plurality of central single-photon avalanche diodes.

18. The semiconductor package defined in claim 12 , wherein the line array of single-photon avalanche diodes includes time-of-flight circuitry.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2023
From: MCGARVEY, BRIAN PATRICK
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 065730/0081 →
Continuity (2)
Division 16949837 · Nov 17, 2020
Related Publication 20240105748A1 · Mar 28, 2024
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