IP Library › Granted Patent US 12,342,657
Granted Patent B1
US 12,342,657 · App. 18/593,812 · Granted Jun 24, 2025

Solar cell, method for preparing the same, and photovoltaic module

Inventors: Zhao Wang (Zhejiang, CN); Jie Mao (Zhejiang, CN); Jingming Zheng (Zhejiang, CN); Xinyu Zhang (Zhejiang, CN); Peiting Zheng (Zhejiang, CN); Jie Yang (Zhejiang, CN)
Assignees: ZHEJIANG JINKO SOLAR CO., LTD.; JINKO SOLAR CO., LTD.
H10F77/703H10F71/129H10F77/211
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Quick Facts
Patent No.
US 12,342,657
App. No.
18/593,812
Granted
Jun 24, 2025
Kind
B1
Abstract

Provided are a solar cell, a method for preparing a photovoltaic module, and a photovoltaic module. The solar cell includes: a substrate, a first dielectric layer and a first doped conductive layer. The substrate has a first surface and a second surface opposite to the first surface. The first surface includes alternating electrode regions and non-electrode regions, and transition regions, each respective transition region of the transition regions being abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions. The transition region includes a plurality of spaced first pyramid structures and a plurality of micro-convex structures, and a one-dimensional size of a bottom of a respective micro-convex structure is smaller than a one-dimensional size of a bottom of a respective first pyramid structure.

Claims (33)

1. A solar cell, comprising:

a substrate, having a first surface and a second surface opposite to the first surface, the first surface including alternating electrode regions and non-electrode regions, and transition regions, each respective transition region of the transition regions being abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions, wherein the respective transition region includes a plurality of spaced first pyramid structures and a plurality of micro-convex structures, and a one-dimensional size of a bottom of a respective micro-convex structure of the plurality of micro-convex structures is smaller than a one-dimensional size of a bottom of a respective first pyramid structure of the plurality of first pyramid structures; wherein the one-dimensional size of the bottom of the respective micro-convex structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the respective micro-convex structure on the substrate, and the one-dimensional size of the bottom of the respective first pyramid structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the respective first pyramid structure on the substrate; and wherein the plurality of spaced first pyramid structures are mixed with the plurality of micro-convex structures throughout the respective transition region;

a first dielectric layer, formed over the respective electrode region; and

a first doped conductive layer, formed over the first dielectric layer;

wherein a surface of the first doped conductive layer formed over the respective electrode region has a second surface structure including a plurality of third pyramid structures; and the respective non-electrode region has a third surface structure including a plurality of fourth pyramid structures; and

wherein the one-dimensional size of the bottom of the respective first pyramid structure is larger than a one-dimensional size of a bottom of a respective third pyramid structure of the plurality of third pyramid structures, and the one-dimensional size of the bottom of the respective third pyramid structure is larger than a one-dimensional size of a bottom of a respective fourth pyramid structure of the plurality of fourth pyramid structures, wherein the one-dimensional size of the bottom of the respective third pyramid structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the respective third pyramid structure on the substrate, and wherein the one-dimensional size of the bottom of the respective fourth pyramid structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the respective fourth pyramid structure on the substrate.

2. The solar cell according to claim 1 , wherein the plurality of micro-convex structures include at least one of prism structures inclined toward the respective electrode region, second pyramid structures or triangular plate-like structures.

3. The solar cell according to claim 2 , wherein the prism structures are disposed on sidewalls of the plurality of first pyramid structures.

4. The solar cell according to claim 2 , wherein a bottom of a respective second pyramid structure of the second pyramid structures is in a contact connection with a bottom of the respective first pyramid structure of the plurality of first pyramid structures.

5. The solar cell according to claim 2 , wherein the triangular plate-like structures are disposed on sidewalls of the plurality of first pyramid structures.

6. The solar cell according to claim 1 , wherein the electrode regions include positive electrode regions and negative electrode regions;

wherein the first dielectric layer includes first sub-dielectric portions and second sub-dielectric portions, each respective first sub-dielectric portion of the first sub-dielectric portions is formed over a respective positive electrode region of the positive electrode regions, and each respective second sub-dielectric portion of the second sub-dielectric portions is formed over a respective negative electrode region of the negative electrode regions; and

wherein the first doped conductive layer includes first sub-doped conductive portions and second sub-doped conductive portions, a respective first sub-doped conductive portion of the first sub-doped conductive portions is disposed on a side of the respective first sub-dielectric portion facing away from the respective positive electrode region, a respective second sub-doped conductive portion of the second sub-doped conductive portions is disposed on a side of the respective second sub-dielectric portion facing away from the respective negative electrode region, and a type of a doping element in the respective first sub-doped conductive portion is different from a type of a doping element in the respective second sub-doped conductive portion.

7. The solar cell according to claim 6 , wherein the respective electrode region has a fourth surface structure including a plurality of platform raised structures; and the respective non-electrode region has a fifth surface structure including a plurality of fifth pyramid structures;

wherein the one-dimensional size of the bottom of the respective first pyramid structure is greater than a one-dimensional size of a bottom of a respective fifth pyramid structure of the plurality of fifth pyramid structures.

8. The solar cell according to claim 1 , wherein the respective electrode region has a first top surface, the respective non-electrode region has a second top surface, the first top surface is higher than the second top surface with the second surface as a reference, and a height difference between the first top surface and the second top surface is 0.5 μm to 10 μm.

9. A photovoltaic module, comprising:

at least one cell string, each of the at least one cell string including interconnected solar cells;

an encapsulation glue film, configured to cover a surface of the at least one cell string; and

a cover plate, configured to cover a surface of the encapsulation glue film facing away from the at least one cell string,

wherein each of the solar cells includes:

a substrate, having a first surface and a second surface opposite to the first surface, the first surface including alternating electrode regions and non-electrode regions, and transition regions, each respective transition region of the transition regions being abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions, wherein the respective transition region includes a plurality of spaced first pyramid structures and a plurality of micro-convex structures, and a one-dimensional size of a bottom of a respective micro-convex structure of the plurality of micro-convex structures is smaller than a one-dimensional size of a bottom of a respective first pyramid structure of the plurality of first pyramid structures; wherein the one-dimensional size of the bottom of the respective micro-convex structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the micro-convex structure on the substrate, and the one-dimensional size of the bottom of the respective first pyramid structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the first pyramid structure on the substrate; and wherein the plurality of spaced first pyramid structures are mixed with the plurality of micro-convex structures throughout the respective transition region;

a first dielectric layer, formed over the respective electrode region; and

a first doped conductive layer, formed over the first dielectric layer;

wherein a surface of the first doped conductive layer formed over the respective electrode region has a second surface structure including a plurality of third pyramid structures; and the respective non-electrode region has a third surface structure including a plurality of fourth pyramid structures; and

wherein the one-dimensional size of the bottom of the respective first pyramid structure is larger than a one-dimensional size of a bottom of a respective third pyramid structure of the plurality of third pyramid structures, and the one-dimensional size of the bottom of the respective third pyramid structure is larger than a one-dimensional size of a bottom of a respective fourth pyramid structure of the plurality of fourth pyramid structures, wherein the one-dimensional size of the bottom of the respective third pyramid structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the respective third pyramid structure on the substrate, and wherein the one-dimensional size of the bottom of the respective fourth pyramid structure is any one of a length or a diagonal length of an orthographic projection pattern of the bottom of the respective fourth pyramid structure on the substrate.

10. The solar cell according to claim 2 , wherein some of the prism structures are disposed proximate to the respective electrode region.

11. The solar cell according to claim 3 , wherein some of the prism structures are disposed proximate to the respective electrode region.

12. The solar cell according to claim 2 , wherein some of the prism structures are sequentially arranged in a direction away from sidewalls of the plurality of first pyramid structures.

13. The solar cell according to claim 3 , wherein some of the prism structures are sequentially arranged in a direction away from sidewalls of the plurality of first pyramid structures.

14. The solar cell according to claim 2 , wherein at least one second pyramid structure of the second pyramid structures is disposed in a spacing between two adjacent first pyramid structures of the plurality of first pyramid structures.

15. The solar cell according to claim 4 , wherein at least one second pyramid structure of the second pyramid structures is disposed in a spacing between two adjacent first pyramid structures of the plurality of first pyramid structures.

16. The solar cell according to claim 2 , wherein some of the triangular plate-like structures are sequentially arranged in a direction away from sidewalls of the plurality of first pyramid structures.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2025
From: WANG, ZHAO; MAO, JIE; ZHANG, JINGMING; ZHANG, XINYU; ZHENG, PEITING; YANG, JIE
To: ZHEJIANG JINKO SOLAR CO., LTD.; JINKO SOLAR CO., LTD.
Reel/Frame 071260/0375 →
Priority Claims (1)
CN 202311738600.3 · Dec 15, 2023 · national
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Cited By (1)
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