Magnetic memory device
According to one embodiment, a magnetic memory device includes a memory cell. The memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. The electrode includes: a first non-magnetic layer being in contact with the switching element; and a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer. The second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.
1 . A magnetic memory device comprising a memory cell, the memory cell including:
a switching element;
a magnetoresistance effect element; and
an electrode that electrically couples the switching element to the magnetoresistance effect element,
wherein the electrode includes:
a first non-magnetic layer being in contact with the switching element; and
a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer, and
the second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.
2 . The magnetic memory device of claim 1 , wherein
the second non-magnetic layer contains at least one compound selected from WSiN, WSiO, SiN, SiB, AlO, NiCr, TiN, InO, CuSi, WN, and TaN.
3 . The magnetic memory device of claim 1 , wherein
the first non-magnetic layer contains carbon (C).
4 . The magnetic memory device of claim 3 , wherein
the first non-magnetic layer further contains nitride (N).
5 . The magnetic memory device of claim 1 , wherein
the electrode further includes a third non-magnetic layer that is in contact with the second non-magnetic layer on a side opposite to a side on which the first non-magnetic layer is provided with respect to the second non-magnetic layer, and
the third non-magnetic layer contains an oxide of a compound contained in the second non-magnetic layer.
6 . The magnetic memory device of claim 5 , wherein
the electrode further includes a fourth non-magnetic layer provided on a side opposite to a side on which the second non-magnetic layer is provided with respect to the third non-magnetic layer, and
the fourth non-magnetic layer contains hafnium (Hf) and boron (B).
7 . The magnetic memory device of claim 6 , wherein
the electrode further includes a fifth non-magnetic layer provided on a side opposite to a side on which the third non-magnetic layer is provided with respect to the fourth non-magnetic layer, and
the fifth non-magnetic layer contains tantalum (Ta).
8 . The magnetic memory device of claim 7 , wherein
the electrode further includes a sixth ferromagnetic layer provided on a side opposite to a side on which the fourth non-magnetic layer is provided with respect to the fifth non-magnetic layer, and
the sixth non-magnetic layer contains platinum (Pt).
9 . The magnetic memory device of claim 8 , wherein
the electrode further includes a seventh non-magnetic layer provided on a side opposite to a side on which the fifth non-magnetic layer is provided with respect to the sixth non-magnetic layer, and
the seventh non-magnetic layer includes silicon (Si) and boron (B).
10 . The magnetic memory device of claim 1 , wherein
the magnetoresistance effect element is provided on a side opposite to a side on which a substrate is provided with respect to the switching element.
11 . The magnetic memory device of claim 1 , wherein
the magnetoresistance effect element includes:
a first ferromagnetic layer;
a second ferromagnetic layer;
a third ferromagnetic layer provided on an opposite side on which the first conductive layer is provided with respect to the second ferromagnetic layer;
an eighth non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer; and
a ninth non-magnetic layer provided between the second ferromagnetic layer and the third ferromagnetic layer, and
the eighth non-magnetic layer contains an oxide of magnesium (Mg).
12 . The magnetic memory device of claim 11 , wherein
the ninth non-magnetic layer contains an element selected from the group consisting of ruthenium (Ru), osmium (Os), rhodium (Rh), iridium (Ir), vanadium (V), and chrome (Cr).
13 . The magnetic memory device of claim 11 , wherein
the third ferromagnetic layer is provided between a substrate and the second ferromagnetic layer.
14 . The magnetic memory device of claim 11 , wherein
the first ferromagnetic layer is provided between a substrate and the second ferromagnetic layer.
15 . The magnetic memory device of claim 11 , wherein
the second ferromagnetic layer and the third ferromagnetic layer are coupled in an antiferromagnetic manner.
16 . The magnetic memory device of claim 1 , wherein
the switching element is a 2-terminal type switching element.