Memory device
A memory device includes, a memory cell array including first to fourth sub-arrays, a first bit line coupled to the first sub-array and the second sub-array, a second bit line arranged side by side with the first bit line in a first direction and coupled to the third sub-array and the fourth sub-array, a third bit line arranged at a position different from the first bit line in a second direction and coupled to at least the second sub-array and the third sub-array, a fourth bit line arranged side by side with the third bit line in the first direction and coupled to the fourth sub-array, a first circuit electrically coupled to the first bit line and the second bit line, and a second circuit electrically coupled to the third bit line and the fourth bit line.
1 . A memory device comprising:
a memory cell array including a first sub-array including a plurality of first memory cells, a second sub-array including a plurality of second memory cells, a third sub-array including a plurality of third memory cells, and a fourth sub-array including a plurality of fourth memory cells;
a first bit line coupled to the first sub-array and the second sub-array and extending in a first direction;
a second bit line arranged side by side with the first bit line in the first direction and coupled to the third sub-array and the fourth sub-array;
a third bit line arranged at a position different from the first bit line in a second direction intersecting the first direction and coupled to at least the second sub-array and the third sub-array;
a fourth bit line arranged side by side with the third bit line in the first direction and coupled to the fourth sub-array;
a first circuit electrically coupled to the first bit line and the second bit line; and
a second circuit electrically coupled to the third bit line and the fourth bit line.
2 . The memory device according to claim 1 , wherein
the first circuit is arranged between the second sub-array and the third sub-array in the first direction, and
the second circuit is arranged between the third sub-array and the fourth sub-array in the first direction.
3 . The memory device according to claim 2 , further comprising:
a first chip including the memory cell array; and
a second chip bonded to the first chip and including the first circuit and the second circuit,
wherein the first bit line is electrically coupled to the first circuit via a first pad provided on a bonding surface of the first chip and the second chip, and
the second bit line is electrically coupled to the first circuit via a second pad provided on the bonding surface, and
a length of a first current path coupling the first pad to the first circuit is equal to a length of a second current path coupling the second pad to the first circuit.
4 . The memory device according to claim 2 , wherein
the second sub-array, the first circuit, the third sub-array, the second circuit, and the fourth sub-array are arranged side by side in the first direction on a substrate, and
a length of a third current path coupling the first bit line to the first circuit is equal to a length of a fourth current path coupling the second bit line to the first circuit.
5 . The memory device according to claim 2 , wherein
the first circuit and the second circuit are provided on a substrate,
the first sub-array, the second sub-array, the third sub-array, and the fourth sub-array are arranged above the first circuit and the second circuit in a third direction intersecting the first direction and the second direction and perpendicular to the substrate, and
a length of a fifth current path coupling the first bit line to the first circuit is equal to a length of a sixth current path coupling the second bit line to the first circuit.
6 . The memory device according to claim 3 , further comprising:
a fifth bit line coupled to the first sub-array and the second sub-array and arranged at a position different from the first bit line in the second direction;
a sixth bit line arranged side by side with the fifth bit line in the first direction and coupled to the third sub-array and the fourth sub-array; and
a third circuit arranged between the second sub-array and the third sub-array in the first direction and electrically coupled to the fifth bit line and the sixth bit line,
wherein the fifth bit line is electrically coupled to the third circuit via a first interconnect extending in the second direction and a third pad provided on the bonding surface and arranged at a position different from the fifth bit line in the second direction, and
the sixth bit line is electrically coupled to the third circuit via a second interconnect extending in the second direction and a fourth pad provided on the bonding surface and arranged at a position different from the sixth bit line in the second direction.
7 . The memory device according to claim 3 , wherein
the third bit line is electrically coupled to the second circuit via a third pad provided on the bonding surface,
the fourth bit line is electrically coupled to the second circuit via a fourth pad provided on the bonding surface, and
the first pad, the second pad, the first circuit, the second circuit, the third pad, and the fourth pad are arranged side by side in the first direction.
8 . The memory device according to claim 1 , wherein
each of the plurality of first memory cells includes:
a transistor including a semiconductor layer that has one end coupled to a bit line and in which a channel is formed, and a gate electrode coupled to a word line; and
a capacitor having one electrode coupled to an other end of the semiconductor layer and an other electrode coupled to a plate line.
9 . A memory device comprising:
a first chip including:
a memory cell array including a first sub-array including a plurality of first memory cells and a second sub-array including a plurality of second memory cells;
a first bit line coupled to the first sub-array and extending in a first direction; and
a second bit line arranged side by side with the first bit line in the first direction and coupled to the second sub-array, and
a second chip including a first circuit to which the first bit line and the second bit line are electrically coupled,
wherein
the first bit line is electrically coupled to the first circuit via a first pad provided on a bonding surface of the first chip and the second chip,
the second bit line is electrically coupled to the first circuit via a second pad provided on the bonding surface, and
the first circuit is arranged between the first pad and the second pad in the first direction.
10 . The memory device according to claim 9 , wherein
a length of a first current path coupling the first pad to the first circuit is equal to a length of a second current path coupling the second pad to the first circuit.
11 . The memory device according to claim 9 , wherein
the first pad, the first circuit, and the second pad are arranged side by side in the first direction above the first sub-array.
12 . The memory device according to claim 11 , wherein
the first chip further includes:
a third bit line arranged side by side with the first bit line in a second direction intersecting the first direction;
a fourth bit line arranged side by side with the second bit line in the second direction; and
a second circuit to which the third bit line and the fourth bit line are electrically coupled,
the third bit line is electrically coupled to the second circuit via a third pad provided on the bonding surface,
the fourth bit line is electrically coupled to the second circuit via a fourth pad provided on the bonding surface, and
the third pad, the second circuit, and the fourth pad are arranged side by side in the first direction above the second sub-array.
13 . The memory device according to claim 9 , wherein
the first chip further includes a jth (j is an integer of 0 or more) bit line, a (j+1) th bit line, and a (j+2) th bit line that are coupled to the first sub-array,
the jth bit line is coupled to a jth pad on the bonding surface,
the (j+1) th bit line is coupled to a (j+1) th pad on the bonding surface,
the (j+2) th bit line is coupled to a (j+2) th pad on the bonding surface, and
the jth pad and the (j+2) th pad are not adjacent to each other in the first direction.
14 . The memory device according to claim 13 , wherein
the jth bit line and the (j+2) th bit line are collectively selected in a write operation.
15 . The memory device according to claim 9 , wherein
each of the plurality of first memory cells includes:
a transistor including a semiconductor layer that has one end coupled to a bit line and in which a channel is formed, and a gate electrode coupled to a word line; and
a capacitor having one electrode coupled to an other end of the semiconductor layer and an other electrode coupled to a plate line.
16 . A memory device comprising:
a first chip including:
a memory cell array including a first sub-array including a plurality of first memory cells;
a first bit line coupled to the first sub-array and extending in a first direction;
a second bit line arranged side by side with the first bit line in a second direction intersecting the first direction;
a third bit line arranged side by side with the second bit line in the second direction; and
a fourth bit line arranged side by side with the third bit line in the second direction, and
a second chip including:
a first circuit to which the first bit line and the second bit line are electrically coupled; and
a second circuit to which the third bit line and the fourth bit line are electrically coupled,
wherein the first bit line is electrically coupled to the first circuit via a first pad provided on a bonding surface of the first chip and the second chip, and
the second bit line is electrically coupled to the first circuit via a second pad provided on the bonding surface,
the third bit line is electrically coupled to the second circuit via a third pad provided on the bonding surface,
the fourth bit line is electrically coupled to the second circuit via a fourth pad provided on the bonding surface,
the first pad, the first circuit, and the second pad are arranged side by side in the first direction,
the third pad, the second circuit, and the fourth pad are arranged side by side in the first direction, and
the second pad and the third pad are not adjacent to each other in the first direction.
17 . The memory device according to claim 16 , wherein
a length of a first current path coupling the first pad to the first circuit is equal to a length of a second current path coupling the second pad to the first circuit.
18 . The memory device according to claim 16 , wherein
each of the plurality of first memory cells includes:
a transistor including a semiconductor layer that has one end coupled to a bit line and in which a channel is formed, and a gate electrode coupled to a word line; and
a capacitor having one electrode coupled to an other end of the semiconductor layer and an other electrode coupled to a plate line.