Built-in self-test circuitry for data in path for non-volatile memory with multiple test clock speeds for multiple test modes
Built-in self-test circuitry of a non-volatile memory device is presented for testing the data path between the input/output (IO) pads of a memory chip and the buffer memory used to store data to be written into or read out of a memory array. One set of tests on the data path can be high speed data path tests to determine whether the memory device can handle the transfer speed of user data transfer to and from the memory device. However, this requires data path testing based on a high speed test clock which may not be suitable for other test modes, such as setting trim values. To address this issue, the following presents testing techniques and circuitry for data path testing having multiple modes, in which the frequency of the test clock signal is divided by differing amounts depending on the test selected.
1 . A non-volatile memory device, comprising:
a control circuit configured to connect to an array of non-volatile memory cells, the control circuit comprising:
a plurality of input/output pads configured to receive and transmit data in a multi-bit serial format;
a cache buffer configured to store data to be written in and read from the array;
data path circuitry connected to transfer data between the cache buffer and the plurality of input/output pads and configured to convert received data from the serial format to a parallel format when transferring the received data from the input/output pads to the cache buffer and to convert read data from the parallel format to the serial format when transferring the read data from the cache buffer to the input/output pads; and
a voltage controlled oscillator,
the control circuit configured to:
generate by the voltage controlled oscillator a clock signal with a first frequency;
select either a first test mode or a second test mode for the data path circuit;
in response to selecting the first test mode, divide the first frequency by a first amount and test the data path circuitry using a clock with a frequency of the first frequency divided by the first amount; and
in response to selecting the second test mode, divide the first frequency by a second amount and test the data path circuitry using a clock with a frequency of the first frequency divided by the second amount.
2 . The non-volatile memory device of claim 1 , wherein the control circuit is formed on a control die, the non-volatile memory device further comprising:
a memory die including the array of non-volatile memory cells, the memory die separate from and bonded to the control die.
3 . The non-volatile memory device of claim 1 , wherein, in the first test mode and in the second test mode, the control circuit is further configured to:
transfer a data pattern over the data path circuitry; and
store the transferred data pattern in the cache buffer.
4 . The non-volatile memory device of claim 3 , wherein, in the first test mode and in the second test mode, the control circuit is further configured to:
read out the transferred data pattern as stored in the cache buffer; and
compare the read out transferred data pattern with the data pattern as transferred.
5 . The non-volatile memory device of claim 3 , wherein the control circuit is further configured to:
generate data pattern as a randomly generated data pattern.
6 . The non-volatile memory device of claim 1 , wherein the clock used in the second test mode is a slower clock than in the first test mode, and wherein the second test mode is a mode to determine trim values for the data path circuitry.
7 . The non-volatile memory device of claim 1 , wherein the clock used in the first test mode is a faster clock than in the second test mode, and wherein the first test mode is a high speed mode in which the clock used in the first test mode is a faster clock than used when receiving user data at the input/output pads.
8 . The non-volatile memory device of claim 1 , where the multi-bit serial format is a byte-wide serial format.
9 . The non-volatile memory device of claim 1 , wherein the data path circuitry comprises a plurality of stages of conversion from the serial format to the parallel format when transferring the received data from the input/output pads to the cache buffer and a plurality of stages of conversion to convert read data from the parallel format to the serial format when transferring the read data from the cache buffer to the input/output pads.
10 . The non-volatile memory device of claim 1 , wherein the control circuit further comprises:
a first set of one or more serial connected divide by two frequency dividers; and
a second set of one or more serial connected divide by two frequency dividers, wherein the control circuit is further configured to:
in the first test mode, divide the first frequency by the first amount using the first set of divide by two frequency dividers; and
in the second test mode, divide the first frequency by the second amount using the first set of divide by two frequency dividers in series with the second set of divide by two frequency dividers.
11 . The non-volatile memory device of claim 1 , further comprising the array of non-volatile memory cells, wherein the array is a NAND memory array.
12 . The non-volatile memory device of claim 1 , further comprising the array of non-volatile memory cells, wherein the memory cells are phase change memory cells.
13 . The non-volatile memory device of claim 1 , further comprising the array of non-volatile memory cells, wherein the memory cells are magnetic random access memory cells.
14 . A method, comprising:
receiving, at a built-in self-test circuit of a non-volatile memory device, an instruction to test a data path of the non-volatile memory device specifying either a first test mode or a second test mode, the data path being between input pads of the non-volatile memory device and a cache buffer configured to store data to be written to memory cells of the non-volatile memory device, the data path configured to convert data received at the input pads in a serial format to a parallel format for storing in the cache buffer;
in response to the instruction to test the data path, generating a test clock signal;
in response to the instruction to test the data path specifying the first test mode:
dividing a frequency of the test clock signal by a first amount; and
testing the data path using test clock signal divided by the first amount; and
in response to the instruction to test the data path specifying the second test mode:
dividing the frequency of the test clock signal by a second amount; and
testing the data path using test clock signal divided by the second amount.
15 . The method of claim 14 , wherein the test clock signal divided by the second amount is a slower clock signal than the test clock signal divided by the first amount and the second test mode comprises:
determining trim values for the data path.
16 . The method of claim 14 , wherein the test clock signal divided by the first amount is a faster clock signal than the test clock signal divided by the second amount and the first test mode comprises:
a high speed mode in which the test clock signal divided by the first amount is a faster clock than used when receiving user data at the input pads.
17 . The method of claim 14 , wherein dividing the frequency of the test clock signal by the first amount comprises dividing the test clock signal by a first set of one or more serially connected divide by two frequency dividers, and
wherein dividing the frequency of the test clock signal by the second amount comprises dividing the test clock signal by the first set of one or more divide by two frequency dividers and further dividing the test clock signal by a second set of one or more serially connected divide by two frequency dividers.
18 . A non-volatile memory device, comprising:
an array of non-volatile memory cells;
a plurality of input/output pads;
a cache buffer configured to store data to be written in the array;
a data path circuit configured to transfer data from the plurality of input/output pads to the cache buffer, including converting the transferred data from a serial format to a parallel format; and
one or more control circuits, comprising:
a built-in self-test, including a voltage controller oscillator, connected to the data path circuit, and configured to:
receive a command to perform a test on the data path circuit specifying either a first test mode or a second test mode;
in response to receiving the command to perform the test, generate a test clock signal by the voltage controlled oscillator;
in response to the command to perform the test specifying the first test mode, divide a frequency of the test clock signal by a first amount and test the data path circuit in the first test mode using the frequency of the test clock signal divided by the first amount; and
in response to the command to perform the test specifying the second test mode, divide the frequency of the test clock signal by a second amount and test the data path circuit in the second test mode using the frequency of the test clock signal divided by the second amount.
19 . The non-volatile memory device of claim 18 , wherein:
the test clock signal divided by the second amount is a slower clock signal than the test clock signal divided by the first amount;
the second test mode is a trim test mode; and
the first test mode is a high speed data path test mode.
20 . The non-volatile memory device of claim 18 , the one or more control circuits further comprising:
a first set of one or more serially connected divide by two frequency dividers; and
a first set of one or more serially connected divide by two frequency dividers,
wherein dividing the frequency of the test clock signal by the first amount is performed using the first set of divide by two frequency dividers, and
wherein dividing the frequency of the test clock signal by the second amount is performed using the first set of divide by two frequency dividers and the second set of divide by two frequency dividers in series.