White-infra-red image sensor having unit pixel with vertically stacked arrangement of photoelectric conversion regions
A unit pixel includes: a substrate having a light-receiving side and a front side; a first photoelectric conversion region and a second photoelectric conversion region. The first photoelectric conversion region is disposed in the substrate and configured to convert a first component of incident light within a first light wavelength range to generate a first charge. The second photoelectric conversion region is disposed in the substrate and configured to convert a second component of the incident light within a second wavelength range to a second charge. Specifically, the second photoelectric conversion region is interposed between the first photoelectric conversion region and the light-receiving side of the substrate; and the first photoelectric conversion region and the second photoelectric conversion region are spaced apart by a gap region.
1 . A unit pixel, comprising:
a substrate having a light-receiving side and a front side;
a first photoelectric conversion region, disposed in the substrate, configured to convert a first component of incident light within a first light wavelength range to generate a first charge; and
a second photoelectric conversion region, disposed in the substrate, configured to convert a second component of the incident light within a second wavelength range to a second charge;
wherein the second photoelectric conversion region is interposed between the first photoelectric conversion region and the light-receiving side of the substrate; and the first photoelectric conversion region and the second photoelectric conversion region are spaced apart by a gap region;
wherein the second photoelectric conversion region has an L-shaped structure, and a portion of the second photoelectric conversion region extends vertically upwards to the front side of the substrate.
2 . The unit pixel of claim 1 , wherein the first wavelength range corresponds to an infra-red wavelength range, and the second wavelength range corresponds to a visible light wavelength range.
3 . The unit pixel of claim 1 , further comprising:
a micro lens layer, disposed on the light-receiving side of the substrate, wherein there is no color filter layer disposed between the micro lens layer and the substrate.
4 . The unit pixel of claim 1 , further comprising:
a plurality of deep trench isolation regions, disposed in the substrate and positioned around the second photoelectric conversion region.
5 . The unit pixel of claim 1 , wherein the gap region between the first photoelectric conversion region and the second photoelectric conversion region is configured to block a third component of the incident light within a third wavelength range, preventing it from being absorbed by the first photoelectric conversion.
6 . The unit pixel of claim 5 , wherein the first wavelength range is determined according to a depth and a thickness of the gap region.
7 . The unit pixel of claim 5 , wherein the unit pixel is backside illuminated.
8 . An image sensor comprising a plurality of unit pixels of claim 1 that are two-dimensionally arranged.
9 . A unit pixel, comprising:
a substrate having a light-receiving side and a front side;
a first photoelectric conversion region, disposed in the substrate, configured to convert a first component of incident light within a first light wavelength range to generate a first charge;
a second photoelectric conversion region, disposed in the substrate, configured to convert a second component of the incident light within a second wavelength range to a second charge;
a first floating diffusion region, disposed in the substrate;
a first gate region, disposed on the front side of the substrate and positioned over the first floating diffusion region and the first photoelectric conversion region, configured to control transfer of the first charge from the first photoelectric conversion region to the first floating diffusion region by providing a channel therebetween;
a second floating diffusion region, disposed in the substrate; and
a second gate region, disposed on the front side of the substrate and positioned over the second floating diffusion region and the second photoelectric conversion region, configured to control transfer of the second charge from the second photoelectric conversion region to the second floating diffusion region by providing a channel therebetween;
wherein the second photoelectric conversion region is interposed between the first photoelectric conversion region and the light-receiving side of the substrate; and the first photoelectric conversion region and the second photoelectric conversion region are spaced apart by a gap region.
10 . An image sensor comprising a plurality of unit pixels of claim 9 that are two-dimensionally arranged.