IP Library › Granted Patent US 12,546,458
Granted Patent B2
US 12,546,458 · App. 18/639,089 · Granted Feb 10, 2026

Backlight unit

Inventor: Chung Hoon Lee (Ansan-si, KR)
Assignee: SEOUL SEMICONDUCTOR CO., LTD.
F21V13/08F21V3/12F21V7/04F21V7/24F21V9/30G02B6/0055G02B6/0073G02F1/133603G02F1/133605G02F1/133606H01L25/0753H10H20/8514H10H20/856F21Y2105/16F21Y2115/10G02F1/133614H10H20/812H10H20/815H10H20/816H10H20/825H10H20/833H10H20/841H10H20/8512
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Quick Facts
Patent No.
US 12,546,458
App. No.
18/639,089
Granted
Feb 10, 2026
Kind
B2
Abstract

The present invention relates to a backlight unit for use in a display device. The backlight unit includes a circuit board, at least one light-emitting diode chip mounted on the circuit board, a plurality of reflection members arranged on the upper part of the light-emitting diode chip, and a light diffusing member. The light diffusing member has an incident surface on which light enters and an emitting surface from which light is emitted. The light diffusing member is arranged on the upper part of the circuit board. The plurality of reflection members are stacked on each other and reflect a part of light emitted from the upper surface of the light-emitting diode chip.

Claims (55)

1 . A light emitting module, comprising:

a circuit board;

a light emitter disposed on the circuit board and configured to emit a primary light;

a reflector disposed on the circuit board;

a light guide disposed on the circuit board and configured to cover a surface of the light emitter, the light guide including a region having a curved surface that is different from a spherical shape; and

a sealing layer disposed between the light emitter and the light guide and including a light transmitting material, the sealing layer being in contact with the reflector and the light emitter and configured to cover upper surfaces of the reflector and the light emitter,

wherein the light emitter comprises:

a substrate;

a light emitting layer disposed on the substrate and configured to emit the primary light;

a first electrode pad electrically connected to a first conductivity type semiconductor layer of the light emitting layer; and

a second electrode pad electrically connected to a second conductivity type semiconductor layer of the light emitting layer,

wherein the sealing layer is disposed on a sidewall of the substrate and a sidewall of the light emitting layer.

2 . The light emitting module of claim 1 , further comprising a wavelength converter disposed on the circuit board.

3 . The light emitting module of claim 2 , wherein the wavelength converter covers at least a region of the reflector.

4 . The light emitting module of claim 1 , wherein the light guide includes a first material having a first refractive index and the light transmitting material of the sealing layer has a second refractive index.

5 . The light emitting module of claim 4 , wherein the first refractive index of the first material is different from the second refractive index of the light transmitting material.

6 . The light emitting module of claim 5 , wherein a difference between the first refractive index and the second refractive index is 10% or less.

7 . The light emitting module of claim 1 , wherein the sealing layer contacts a side surface of the light emitter.

8 . The light emitting module of claim 2 , wherein the wavelength converter includes a green phosphor and a red phosphor.

9 . A backlight unit comprising:

a circuit board;

a light emitter disposed on the circuit board and configured to emit a primary light;

a reflector disposed on the circuit board;

a wavelength converter disposed on the circuit board and configured to convert the primary light;

a light guide disposed on the circuit board and configured to cover the reflector, the light guide including a region having a curved surface; and

a sealing layer disposed between the light emitter and the light guide and covering upper surfaces of the reflector and the light emitter,

wherein the light emitter comprises:

a substrate;

a light emitting layer disposed on the substrate and configured to emit the primary light;

a first electrode pad electrically connected to a first conductivity type semiconductor layer of the light emitting layer; and

a second electrode pad electrically connected to a second conductivity type semiconductor layer of the light emitting layer,

wherein the sealing layer is disposed on a sidewall of the substrate and a sidewall of the light emitting layer.

10 . The backlight unit of claim 9 , wherein the sealing layer includes a light transmitting material.

11 . The backlight unit of claim 9 , wherein the light guide includes a first material having a first refractive index and the sealing layer includes a second material having a second refractive index.

12 . The backlight unit of claim 11 , wherein the first refractive index of the first material is different from the second refractive index of the second material.

13 . The backlight unit of claim 11 , wherein a difference between the first refractive index and the second refractive index is 10% or less.

14 . The backlight unit of claim 9 , wherein an area of the reflector is smaller than an area of the circuit board.

15 . The backlight unit of claim 14 , wherein the sealing layer is configured to enhance bonding strength between the circuit board and the light guide.

16 . A light emitting module, comprising:

a circuit board;

a light emitter disposed on the circuit board and configured to emit a primary light;

a reflector disposed on the circuit board;

a light guide disposed on the circuit board and configured to cover a side of the light emitter, the light guide including a region having an inclined surface; and

a sealing layer disposed on the light emitter,

wherein the light emitter comprises:

a substrate;

a light emitting layer disposed on the substrate;

a first electrode pad electrically connected to a first conductivity type semiconductor layer of the light emitting layer; and

a second electrode pad electrically connected to a second conductivity type semiconductor layer of the light emitting layer;

wherein the sealing layer is disposed between the light emitter and the light guide, and

wherein the sealing layer is disposed on a sidewall of the substrate and a sidewall of the light emitting layer.

17 . The light emitting module of claim 16 , wherein the sealing layer contacts the light guide and covers the light emitter.

18 . The light emitting module of claim 16 , wherein the light guide includes a region having a curved surface.

19 . The light emitting module of claim 18 , wherein the region of the light guide is inclined toward the light emitter from a lower region to an upper region of the light emitter.

20 . The light emitting module of claim 16 , wherein an area of a top surface of the light guide is different from an area of a bottom surface of the light guide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2024
From: LEE, CHUNG HOON
To: SEOUL SEMICONDUCTOR CO., LTD.
Reel/Frame 067151/0249 →
Priority Claims (3)
KR 10-2017-0168249 · Dec 8, 2017 · national
KR 10-2018-0007751 · Jan 22, 2018 · national
KR 10-2018-0157216 · Dec 7, 2018 · national
Continuity (5)
Continuation 18178856 · Mar 6, 2023
Continuation 17117330 · Dec 10, 2020
Continuation 16895248 · Jun 8, 2020
Continuation PCTKR2018015599 · Dec 10, 2018
Related Publication 20240263762A1 · Aug 8, 2024
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