Granted Patent B2

US 12,592,651 · App. 18/682,514 · Granted Mar 31, 2026

Inventors: Yoshihiro Miwa (Tokyo, JP); Hiroyuki Shoji (Tokyo, JP); Junichi Sakano (Tokyo, JP); Tomoyuki Utsumi (Hitachi, JP); Takahiro Higuchi (Hitachi, JP)

Assignee: MINEBEA POWER SEMICONDUCTOR DEVICE INC.

H02M7/219H02M1/08H02M1/0048

Abstract

Claims (30)

1 . A rectifier circuit comprising:

a first MOSFET;

a second MOSFET;

a first control circuit; and

a second control circuit,

wherein the second MOSFET falls in a non-rectification time period when the first MOSFET falls in a rectification time period, and the first MOSFET falls in a non-rectification time period when the second MOSFET falls in a rectification time period,

during at least a part of a time period within which a voltage between a drain and a source of the second MOSFET is inputted as a first input voltage to the first control circuit, and a negative voltage is applied between a drain and a source of the first MOSFET, the first control circuit outputs a voltage generated based on the first input voltage, as a first output voltage, between a gate and the source of the first MOSFET,

during at least a part of a time period within which a voltage between the drain and the source of the first MOSFET is inputted as a second input voltage to the second control circuit, and a negative voltage is applied between the drain and the source of the second MOSFET,

the second control circuit outputs a voltage generated based on the second input voltage, as a second output voltage, between a gate and the source of the second MOSFET,

the first control circuit clamps the first output voltage at a predetermined first threshold voltage when the first input voltage is a voltage equal to or larger than the first threshold voltage, and

the second control circuit clamps the second output voltage at a predetermined second threshold voltage when the second input voltage is a voltage equal to or larger than the second threshold voltage.

2 . The rectifier circuit according to claim 1 , wherein

the first control circuit outputs the first input voltage as the first output voltage when the first input voltage is a voltage smaller than the first threshold voltage, and

the second control circuit outputs the second input voltage as the second output voltage when the second input voltage is a voltage smaller than the second threshold voltage.

3 . The rectifier circuit according to claim 1 , wherein

the first control circuit includes a third MOSFET including: a drain adapted to receive the first input voltage as an input, a source connected to the gate of the first MOSFET; and a gate connected to the source of the third MOSFET itself with a first resistance interposed therebetween, and further connected to the source of the first MOSFET with a second resistance interposed therebetween, and

the second control circuit includes a fourth MOSFET including: a drain adapted to receive the second input voltage as an input, a source connected to the gate of the second MOSFET; and a gate connected to the source of the fourth MOSFET itself with a third resistance interposed therebetween, and further connected to the source of the second MOSFET with a fourth resistance interposed therebetween.

4 . The rectifier circuit according to claim 1 , wherein the first output voltage is a voltage smaller than a maximum value of a drain-source voltage of the second MOSFET, and the second output voltage is a voltage smaller than a maximum value of a drain-source voltage of the first MOSFET.

5 . The rectifier circuit according to claim 1 , wherein the first MOSFET and the second MOSFET comprise N-channel MOSFETs having respective sources connected to a DC low-voltage terminal.

6 . The rectifier circuit according to claim 1 , wherein the first MOSFET and the second MOSFET comprise P-channel MOSFETs having respective sources connected to a DC high-voltage terminal.

7 . The rectifier circuit according to claim 1 , wherein the rectifier circuit has a bridge structure, the first MOSFET and the second MOSFET in a DC low-voltage terminal side comprise N-channel MOSFETs having respective sources connected to a DC low-voltage terminal, and the first MOSFET and the second MOSFET in a DC high-voltage terminal side are P-channel MOSFETs having respective sources connected to a DC high-voltage terminal.

8 . The rectifier circuit according to claim 1 , wherein the first control circuit includes a first switch for clamping the first output voltage at the first threshold voltage when the first input voltage is a voltage equal to or larger than the first threshold voltage, and the second control circuit includes a second switch for clamping the second output voltage at the second threshold voltage when the second input voltage is a voltage equal to or larger than the second threshold voltage.

9 . The rectifier circuit according to claim 1 , wherein

the first control circuit includes a first comparator and a first gate driver for controlling a time period during which the first output voltage is generated, and

the second control circuit includes a second comparator and a second gate driver for controlling a time period during which the second output voltage is generated.

10 . The rectifier circuit according to claim 9 , wherein

the first control circuit includes a first capacitor for stabilizing a voltage at a power supply terminal for the first comparator and the first gate driver, and

the second control circuit includes a second capacitor for stabilizing a voltage at a power supply terminal for the second comparator and the second gate driver.

11 . The rectifier circuit according to claim 1 , wherein the rectifier circuit is incorporated in a single semiconductor package.

12 . A power supply using the rectifier circuit according to claim 1 .

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (23)