Organic interposer including intra-die structural reinforcement structures and methods of forming the same
An organic interposer includes dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the dielectric material layers, and die-side bump structures located on a second side of the dielectric material layers. A gap region is present between a first area including first die-side bump structures and a second area including second die-side bump structures. Stress-relief line structures are located on, or within, the dielectric material layers within an area of the gap region in the plan view. Each stress-relief line structures may include straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures. The stress-relief line structures may include the same material as, or may include a different material from, a metallic material of the redistribution interconnect structures or bump structures that are located at a same level.
1. An organic interposer comprising:
dielectric material layers embedding redistribution interconnect structures;
package-side bump structures located on a first side of the dielectric material layers and connected to a package-side subset of the redistribution interconnect structures;
die-side bump structures located on a second side of the dielectric material layers and connected to a die-side subset of the redistribution interconnect structures, wherein the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
stress-relief line structures located on, or within, the dielectric material layers within an area of the gap region in the plan view, wherein the stress-relief line structures comprises a same material as, and are located at a same level as, one of the package-side bump structures, the redistribution interconnect structures, and the die-side bump structures,
wherein the stress-relief line structures comprise first stress-relief line structures laterally extending along a first horizontal direction and second stress-relief lines structures laterally extending along a second horizontal direction; and
wherein the stress-relief line structures have a different material composition than, or have a different thickness than, the package-side bump structures.
2. The organic interposer of claim 1 , wherein:
the dielectric material layers comprise a package-side dielectric material layer that embeds the package-side bump structures and the stress-relief line structures; and
the organic interposer comprises additional stress-relief line structures having horizontal surfaces that are not in contact with the dielectric material layers or the redistribution interconnect structures.
3. The organic interposer of claim 2 , wherein horizontal surfaces of the package-side bump structures and the horizontal surfaces of the additional stress-relief line structures are located within a same horizontal plane.
4. The organic interposer of claim 2 , wherein the additional stress-relief line structures have a same material composition as, and a same thickness as, the package-side bump structures.
5. The organic interposer of claim 1 , wherein the stress-relief line structures are arranged as an interconnected mesh in which the first stress-relief line structures and the second stress-relief line structures are adjoined in a grid pattern.
6. The organic interposer of claim 1 , wherein each of the stress-relief line structures comprises straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures.
7. The organic interposer of claim 4 , wherein the straight line segments are interconnected among one another by curved line segments having curved sidewalls.
8. The organic interposer of claim 1 , wherein additional stress-relief line structures are embedded within the dielectric material layers and are located between a first horizontal plane including interfaces between the package-side bump structures and a first subset of the redistribution interconnect structures and a second horizontal plane including interfaces between the die-side bump structures and a second subset of the redistribution interconnect structures.
9. The organic interposer of claim 8 , wherein the additional stress-relief line structures have a same material composition as, and a same thickness as, a subset of the redistribution interconnect structures that is different from, or the same as one of, the first subset and the second subset.
10. A method of forming an organic interposer, the method comprising:
forming dielectric material layers embedding redistribution interconnect structures;
forming package-side bump structures on a first side of the dielectric material layers;
forming stress-relief line structures on, or within, the dielectric material layers, wherein the dielectric material layers comprise a die-side dielectric material layer, and the stress-relief line structures are in contact with a horizontal surface of the die-side dielectric material layer; and
forming die-side bump structures on a second side of the dielectric material layers, wherein the stress-relief line structures have a same material composition as, and a same thickness as, the die-side bump structures.
11. The method of claim 10 , wherein:
the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
the stress-relief line structures are formed within an area of the gap region in the plan view.
12. The method of claim 10 , wherein each of the stress-relief line structures comprises straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures.
13. The method of claim 10 , wherein each of the stress-relief line structures comprises:
first straight line segments that laterally extend along a first horizontal direction; and
second straight line segments that laterally extend along a second horizontal direction that is different from the first horizontal direction.
14. The method of claim 13 , wherein sidewalls of the first straight line segments and sidewalls of the second straight line segments of each of the stress-relief line structures are adjoined to one another by vertical edges.
15. The method of claim 13 , wherein the straight line segments are interconnected to one another by curved line segments having curved sidewalls.
16. A method of forming an organic interposer, comprising:
forming package-side bump structures embedded in a package-side dielectric material layer over a carrier substrate;
forming interconnect-level dielectric material layers and redistribution interconnect structures over the package-side bump structures;
forming a die-side dielectric material layer over the interconnect-level dielectric material layers;
forming die-side bump structures over the die-side dielectric material layer, wherein the die-side bump structures comprise first die-side bump structures located in a first area and second die-side bump structures located in a second area that is laterally spaced apart from the first area by a gap region that is free of any die-side bump structure in a plan view; and
forming stress-relief line structures within an area of the gap region in the plan view, wherein the stress-relief line structures comprise a different material than a metallic component located at a same level as the stress-relief line structures.
17. The method of claim 16 , wherein the stress-relief line structures are formed by depositing and patterning a material having a different material composition than the package-side bump structures and the die-side bump structures.
18. The method of claim 17 , wherein the stress-relief line structures are formed at a level of the package-side bump structures or at a level of the die-side bump structures.
19. The method of claim 16 , wherein Young's modulus of the stress-relief line structures is lower than Young's modulus of the package-side bump structures, and is lower than Young's modulus of the die-side bump structures.
20. The organic interposer of claim 1 , wherein:
the stress-relief line structures have a lower Young's modulus than the package-side bump structures; and
the stress-relief line structures are configured to deform under mechanical stress before the package-side bump structures, the redistribution interconnect structures, and the die-side bump structures deform.