SEMICONDUCTOR DEVICE INCLUDING AN INTEGRATED WAFER LEVEL HEAT SINK WINDOW PLATE
A semiconductor device includes a semiconductor controller die and a stack of one or more semiconductor memory dies. In one example, the controller die may have an integrated heat sink window plate, or HSWP, formed on top of the die. In other examples, an uppermost memory die in the stack of memory dies may include an integrated HSWP. The HSWP may be formed on the controller die and/or the memory die at the wafer level.
1 . A semiconductor device, comprising:
a substrate;
a semiconductor controller die physically and electrically mounted to the substrate;
one or more semiconductor memory dies physically and electrically mounted to each other and the substrate;
one or more heat sink window plates (HSWPs) each having first and second surfaces, the first surface formed on one or more of a surface of the controller die and a surface of the uppermost memory die of the one or more memory dies; and
an encapsulant for at least partially encapsulating the semiconductor device, wherein the second surface of the one or more HSWPs is exposed through the encapsulant.
2 . The semiconductor device of claim 1 , wherein the controller die comprises a plurality of bump bonds for flip-chip mounting the controller die to the substrate, a first HSWP of the one or more HSWPs mounted on an inactive surface of the controller die.
3 . The semiconductor device of claim 1 , wherein the uppermost memory die comprises a die attach film layer for mounting the memory die to the substrate, a second HSWP of the one or more HSWPs mounted on an active surface of the memory die.
4 . The semiconductor device of claim 1 , wherein an HSWP of the one or more HSWPs is comprised of a plurality of sublayers.
5 . The semiconductor device of claim 4 , wherein a first sublayer of the HSWP is comprised of Copper.
6 . The semiconductor device of claim 5 , wherein a second sublayer of the HSWP is comprised of a thermally conductive adhesive.
7 . The semiconductor device of claim 6 , wherein a third sublayer of the HSWP is comprised of Nickel and a fourth sublayer of the HSWP is comprised of Chromium.
8 . The semiconductor device of claim 1 , wherein the encapsulant is applied to the semiconductor device after the one or more HSWPs are affixed to one of the controller die and the memory die.
9 . The semiconductor device of claim 1 , wherein an HSWP of the one or more HSWPs is affixed to the controller die, and wherein the HSWP and controller die are diced from a combined wafer including a plurality of HSWPs and a plurality of controller dies.
10 . The semiconductor device of claim 1 , wherein an HSWP of the one or more HSWPs is affixed to the memory die, and wherein the HSWP and memory die are diced from a combined wafer including a plurality of HSWPs and a plurality of memory dies.
11 . The semiconductor device of claim 1 , wherein both of the controller die and the one or more memory dies have an HSWP of the one or more HSWPs affixed to its surface.
12 . The semiconductor device of claim 11 , wherein the exposed second surface of the HSWP on the controller die is coplanar with the exposed second surface of the HSWP on the memory die.
13 . A combination semiconductor wafer, comprising:
a first wafer comprising a plurality of integrated circuit dies;
a second wafer comprising a plurality of heat sink window plates (HSWPs),
each HSWP of the plurality of HSWPs comprising a heat sink and a
thermally conductive adhesive;
wherein the first wafer is aligned with the second wafer such that the plurality of integrated circuit dies align with the plurality of HSWPs; and
wherein the aligned first and second wafers are coupled to each other by the thermally conductive adhesive on each HSWP.
14 . The combination semiconductor wafer of claim 13 , wherein the integrated circuit dies of the first wafer comprise controller dies having an active surface and an inactive surface opposite the active surface.
15 . The combination semiconductor wafer of claim 14 , wherein adhesive layers of the HSWPs on the second wafer are affixed to the inactive surfaces of the controller dies.
16 . The combination semiconductor wafer of claim 13 , wherein the integrated circuit dies of the first wafer comprise memory dies having an active surface and an inactive surface opposite the active surface.
17 . The combination semiconductor wafer of claim 16 , wherein adhesive layers of the HSWPs on the second wafer are affixed to the active surfaces of the memory dies.
18 . The combination semiconductor wafer of claim 13 , wherein the HSWPs in the second wafer are designed to match in number and position to the integrated circuit dies on the first wafer, and wherein divisions between HSWPs in the second wafer are defined by a saw street or a shadow mask.
19 . The combination semiconductor wafer of claim 13 , further comprising a base layer on which the heat sink is formed on the second wafer.
20 . A semiconductor device, comprising:
a substrate;
a controller die physically and electrically mounted to the substrate;
one or more memory dies physically and electrically mounted to each other and the substrate;
heat sink means, disposed on one or more of the controller die and an uppermost memory die of the one or more memory dies, for conducting heat away from the die on which the heat sink means is disposed; and
an encapsulant for at least partially encapsulating the semiconductor device, wherein the heat sink means is exposed through the encapsulant.