Display device
A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.
1. A display device comprising:
a pixel electrode provided in a display region configured to display an image;
a common electrode disposed above the pixel electrode;
a light-emitting element layer interposed between the pixel electrode and the common electrode;
a first thin film transistor coupled to the pixel electrode in the display region, no other transistor being coupled between the first thin film transistor and the pixel electrode, the first thin film transistor including a first semiconductor layer that is formed of an oxide semiconductor; and
a first conductive layer overlapping with the first thin film transistor, the first thin film transistor provided between the light-emitting element layer and the first conductive layer.
2. The display device according to claim 1 , further comprising a color filter provided above the common electrode.
3. The display device according to claim 1 , further comprising a filling layer provided above a sealing layer.
4. The display device according to claim 3 , further comprising a color filter provided above the filling layer.
5. The display device according to claim 1 , further comprising:
a drive circuit provided in a peripheral region outside the display region;
a second thin film transistor provided in the drive circuit; and
a second semiconductor layer of the second thin film transistor formed of polysilicon.
6. The display device according to claim 5 , wherein the second thin film transistor includes a second gate electrode, and
the second gate electrode is in a same layer as the first conductive layer.
7. The display device according to claim 5 , wherein the second thin film transistor includes a second gate electrode, and
the second gate electrode and the first conductive layer are formed of a same material.
8. The display device according to claim 5 , wherein the first semiconductor layer is provided between the light-emitting element layer and the second semiconductor layer in a sectional view, and
the first semiconductor layer does not overlap with the second semiconductor layer.
9. The display device according to claim 8 , wherein the second thin film transistor includes a second gate electrode, and
the second gate electrode is in a same layer as the first conductive layer.
10. The display device according to claim 5 , wherein the pixel electrode is provided at an opposite side of the first semiconductor layer from the second semiconductor layer.
11. The display device according to claim 5 , further comprising a second conductive layer that overlaps with the first semiconductor layer, wherein
the first conductive layer is provided between the first semiconductor layer and the second conductive layer, and
the second conductive layer is in a same layer as the second semiconductor layer.
12. The display device according to claim 11 , wherein the second conductive layer includes polysilicon.
13. The display device according to claim 12 , wherein the second conductive layer includes ions.
14. The display device according to claim 11 , wherein the second conductive layer is electrically connected to the pixel electrode.
15. The display device according to claim 11 , wherein the second conductive layer is electrically connected to the first thin film transistor.
16. The display device according to claim 15 , wherein the second conductive layer is electrically connected to the pixel electrode via one of a source electrode and a drain electrode that are included in the first thin film transistor.
17. The display device according to claim 11 , further comprising a third thin film transistor including a third semiconductor layer in the display region,
wherein a third gate electrode of the third thin film transistor is in a same layer as the first conductive layer, and
the third semiconductor layer is in a same layer as the second conductive layer.
18. The display device according to claim 11 , further comprising a third thin film transistor including a third semiconductor layer in the display region,
wherein a third gate electrode of the third thin film transistor is in a same layer as the first conductive layer, and
a first gate electrode of the first thin film transistor is connected to one of a source electrode and a drain electrode that are included in the third thin film transistor.
19. A display device comprising:
a pixel electrode provided in a display region including pixels;
a common electrode disposed above the pixels;
a light-emitting element including a light-emitting layer interposed between the pixel electrode and the common electrode;
a power supply line supplying a current to the light-emitting element;
a first thin film transistor provided in the display region, coupled to the pixel electrode and the power supply line;
a first semiconductor layer included in the first thin film transistor;
a first conductive layer overlapping with the first semiconductor layer, the first semiconductor layer provided between the light-emitting layer and the first conductive layer;
a second conductive layer overlapping with the first semiconductor layer, the first conductive layer provided between the first semiconductor layer and the second conductive layer; and
a second thin film transistor with a second semiconductor layer that is in a same layer as the second conductive layer.
20. The display device according to claim 19 , wherein the first semiconductor layer is formed of an oxide semiconductor, and
the second semiconductor layer is formed of polysilicon.