IP Library › Patent Application 60552308
Patent Application Provisional
App. No. 60/552,308 · Confirmation No. 5231

Creation fo a high Ge concentration SiGe layer in BiCMOS processing through thermal oxidation of the SiGe base layer

Provisional Application Expired
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 Code Description Pages PDF
2022-04-15 OATH Oath or Declaration filed 253 View
2006-08-08 PA.. Power of Attorney 2 View
2004-03-10 TRNA Transmittal of New Application 1 View
2004-03-10 SPEC Specification 2 View
2004-03-10 DRW Drawings-only black and white line drawings 1 View
2004-03-10 APPENDIX Appendix to the specification 3 View
2004-03-10 APPENDIX Appendix to the specification 6 View
2004-03-10 WFEE Fee Worksheet (SB06) 1 View
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Quick Facts
App. No.
60/552,308
Filed
2004-03-10