Method of fabricating a semiconductor device with a gold conductive layer and organic insulating layer
In a semiconductor device, particles are removed from the surface of a gold conductive layer before an intermediate insulating layer of an amino silane compound is formed. An organic insulating layer is formed on the intermediate insulating layer. As a result, adhesion strength between the conductive layer and the intermediate insulating layer can be improved.
1. A method for fabricating a semiconductor device, comprising:
removing particles from a surface of a conductive layer which is comprised of gold;
forming an intermediate insulating layer on the conductive layer, wherein the intermediate insulating layer is composed of an amino silane compound; and
forming an organic insulating layer on the intermediate insulating layer.
2. The method according to claim 1 , wherein the organic insulating layer and the conductive layer are joined with the intermediate insulating layer.
3. The method according to claim 1 , wherein a concave portion is formed in the surface of the conductive layer.
4. The method according to claim 1 , wherein the amino silane compound is N-aminoalkyl-aminoalkyl (dimethoxyl)-methylsilane.
5. The method according to claim 1 , wherein the particles are comprised of metallic oxide.
6. The method according to claim 1 , the step of removing including
exposing the surface of the conductive layer to hydrochloric acid solution.
7. The method according to claim 6 , wherein the hydrochloric acid solution is diluted with water so as to cause a concentration of the hydrochloric acid solution to be equal to or more than one three hundredth.
8. The method according to claim 1 , the step of removing including
exposing the surface of the conductive layer to an aqua regia solution.
9. The method according to claim 8 , wherein the aqua regia solution is diluted with water so as to cause a concentration of the aqua regia solution to be equal to or more than one tenth.
10. A method for fabricating a semiconductor device, comprising:
forming a first conductive layer on a semiconductor substrate;
forming an insulating layer on the first conductive layer and the semiconductor substrate;
forming a contact hole in the insulating layer so as to expose either a portion of the first conductive layer or a portion of the semiconductor substrate;
forming a metallic layer on an upper surface of the insulating layer and an interior surface of the contact hole;
forming a second conductive layer on the metallic layer, wherein the second conductive layer is comprised of gold;
etching the metallic layer using the second conductive layer as a mask;
removing particles from a surface of the second conductive layer;
forming an intermediate insulating layer on the second conductive layer, wherein the intermediate insulating layer is composed of an amino silane compound; and
forming an organic insulating layer on the intermediate insulating layer;
wherein the organic insulating layer and the second conductive layer are joined with the intermediate insulating layer.
11. The method according to claim 10 , the step of etching including
obliquely implanting ions to the semiconductor substrate.
12. The method according to claim 10 , wherein the particles include iron oxide.
13. The method according to claim 10 , the step of removing including
exposing the second conductive layer to hydrochloric acid solution.
14. The method according to claim 13 , wherein the hydrochloric acid solution is diluted with water so as to cause a concentration of the hydrochloric acid solution to be equal to or more than one three hundredth.
15. The method according to claim 10 , wherein the amino silane compound is N-aminoalkyl-aminoalkyl (dimethoxyl)-methylsilane.