Dynamic random access memory trench capacitors
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
1. A semiconductor structure comprising a trench capacitor, which itself comprises:
a trench formed in a semiconductor substrate, the trench having an interior surface and extending into a region of the substrate, wherein the semiconductor substrate region comprises a strained layer disposed over a relaxed layer, and the relaxed layer includes germanium;
a first conductive material disposed in the trench and defining an outer plate;
an insulating layer disposed proximate the outer plate; and
a second conductive material disposed in the trench proximate the insulating layer, the second conductive material defining an inner plate.
2. The structure of claim 1 , wherein the strained layer comprises at least one of silicon, germanium, a group II element, a group III element, a group V element, and a group VI element.
3. The structure of claim 1 , wherein the strained layer is tensilely strained and comprises silicon.
4. The semiconductor structure of claim 1 , wherein the trench is formed on a first region of the semiconductor substrate, further comprising:
a logic circuit disposed on a second region of the semiconductor substrate, the second region of the semiconductor substrate being electrically isolated from the first region, and the logic circuit including at least one transistor.
5. The semiconductor structure of claim 1 , wherein the first conductive material comprises a conductive layer deposited on the interior trench surface.
6. The structure of claim 5 , wherein the first conductive material comprises polysilicon.
7. The semiconductor structure of claim 5 , wherein the trench is formed on a first region of the semiconductor substrate, further comprising:
a logic circuit disposed on a second region of the semiconductor substrate, the second region of the semiconductor substrate being electrically isolated from the first region, and the logic circuit including at least one transistor.
8. The semiconductor structure of claim 1 , wherein the substrate comprises a first region substantially free of germanium and the strained layer and relaxed layer are disposed in a second region of the substrate, further comprising:
a second trench capacitor disposed in the first region, the second trench capacitor including a second outer plate, a second insulator disposed proximate the second outer plate, and a second inner plate disposed proximate the second insulator.
9. The structure of claim 8 , wherein the strained layer comprises at least one of silicon, germanium, a group II element, a group III element, a group V element, and a group VI element.
10. The semiconductor structure of claim 1 , wherein the first conductive material comprises dopants disposed in a conductive trench sidewall, imparting a conductivity thereto and defining the outer plate.
11. The structure of claim 10 , wherein the dopants are diffused into the trench sidewall.
12. The structure of claim 10 , wherein the dopants are implanted into the trench sidewall.
13. The semiconductor structure of claim 10 , whereinn the region of the substrate comprises dopants, at least a portion of the dopants defining the outer plate.
14. The structure of claim 13 , wherein the substrate comprises a strained layer and the trench extends into the strained layer.