Barrier layer for a copper metallization layer including a low-k dielectric
The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier/etch stop layer is provided with a significantly reduced nitrogen concentration at an interface in contact with said low-k dielectric material. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in said low-k dielectric layer is significantly suppressed, so that in a subsequent photolithographic step, interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.
1. A method of forming a metallization layer, the method comprising:
depositing a single-layer, low-k barrier layer over a substrate having formed thereon a metal region;
during depositing said single-layer, low-k barrier layer, controlling incorporation of a diffusion barrier component into said single-layer, low-k barrier layer such that a concentration of said diffusion barrier component is highest at a first surface of said single-layer, low-k barrier layer facing said metal region and is lowest at a second surface opposite to said first surface, wherein controlling incorporation of said diffusion barrier component includes depositing a first portion of said single-layer, low-k barrier layer, discontinuing supply of a precursor gas containing said diffusion barrier component and depositing a second portion of said single-layer, low-k barrier layer; and
depositing a low-k dielectric layer over said single-layer, low-k barrier layer.
2. The method of claim 1 , further comprising patterning said low-k dielectric layer by anisotropic etching with a photoresist mask, wherein resist poisoning is reduced due to a reduced diffusion of said diffusion barrier component through the second surface.
3. The method of claim 2 , wherein patterning of said low-k dielectric layer includes forming a via extending through said low-k dielectric layer and forming a trench in an upper portion of said low-k dielectric layer by means of a resist mask.
4. The method of claim 3 , further comprising forming a barrier metal layer on sidewalls of said via and said trench and filling said via and said trench with copper.
5. The method of claim 3 , wherein patterning of said low-k dielectric layer further includes forming an organic anti-reflective coating on said low-k dielectric layer and in said via prior to forming a resist mask for patterning said trench.
6. The method of claim 1 , wherein controlling incorporation of said diffusion barrier component includes reducing an amount of a precursor gas containing said diffusion barrier component in a deposition ambient while continuing depositing of said single-layer, low-k barrier layer.
7. The method of claim 1 , wherein said diffusion barrier component comprises nitrogen.
8. The method of claim 1 , wherein said single-layer, low-k barrier layer comprises silicon carbide.
9. The method of claim 8 , wherein said single-layer, low-k barrier layer is deposited from trimethyl silane and ammonia as precursor gases.
10. The method of claim 1 , wherein controlling incorporation of said diffusion barrier component includes:
depositing a first portion of said single-layer, low-k barrier layer in the presence of a precursor gas containing said diffusion barrier component;
removing said precursor gas containing said diffusion barrier component from a deposition ambient; and
depositing a second portion of said single-layer, low-k barrier layer substantially without said precursor gas containing said diffusion barrier component.
11. The method of claim 1 , wherein said method is performed in a single process chamber without breaking a vacuum established in said process chamber.
12. A method of forming a single-layer, low-k dielectric barrier layer over a metal region in a metallization structure, the method comprising:
depositing a nitrogen-containing silicon carbide layer from silicon, carbon and nitrogen-containing precursor gases over at least said metal region; and
discontinuing feeding of said nitrogen-containing precursor gas while further depositing silicon carbide to obtain said single-layer, low-k dielectric barrier layer, wherein a nitrogen concentration in said single-layer, low-k dielectric barrier layer is highest at a first surface of said single-layer, low-k dielectric barrier layer facing said metal region and is lowest at a second surface opposite to said first surface.
13. The method of claim 12 , further comprising forming a low-k dielectric layer over said single-layer, low-k dielectric barrier layer, wherein a diffusion of nitrogen and compounds thereof is reduced due to the decreasing nitrogen concentration in said low-k dielectric barrier layer.
14. The method of claim 12 , wherein said single-layer, low-k dielectric barrier layer is deposited from trimethyl silane and ammonia as precursor gases.
15. The method of claim 12 , wherein a thickness of said low-k dielectric layer prior to discontinuing feeding of said nitrogen-containing precursor gas is in the range of approximately 10-50 nm.
16. The method of claim 12 , wherein said method is performed in a single process chamber without breaking a vacuum established in said process chamber.
17. A method of forming a low-k dielectric barrier layer over a metal region in a metallization structure, the method comprising:
depositing a first silicon carbide layer from a silicon and carbon-containing precursor gas on at least said metal region;
after depositing said first silicon carbide layer, introducing a nitrogen precursor gas into a chamber and establishing a low energy nitrogen plasma ambient to introduce nitrogen into said first silicon carbide layer, said first silicon carbide layer having a first concentration of nitrogen;
discontinuing the introduction of said nitrogen precursor gas; and
after discontinuing the introduction of said nitrogen presursor gas, depositing a second silicon cardide layer on said first silicon carbide layer, said second silicon carbide layer having a second concentration of nitrogen that is less than said first concentration of nitrogen.
18. The method of claim 17 , further comprising controlling said low energy nitrogen plasma ambient by applying a DC bias voltage in the range of approximately 5-100 volts.
19. The method of claim 18 , wherein a thickness of said first silicon carbide layer is in the range of approximately 5-10 nm.
20. The method of claim 18 , wherein said method is carried out without breaking a vacuum prevailing during depositing the first and the second silicon carbide layers and establishing said nitrogen plasma ambient.
21. The method of claim 17 , wherein a plurality of first silicon carbide layers are deposited and nitrogen is incorporated into each of said plurality of first silicon carbide layers prior to depositing a subsequent second silicon carbide layer.
22. A method of forming a single-layer, low-k barrier layer over a metal region in a metallization structure, the method comprising:
depositing a first portion of said single-layer, low-k barrier layer above said metal region while supplying a nitrogen-containing precursor gas, said first portion having a first concentration of nitrogen;
discontinuing supply of said nitrogen-containing precursor gas;
after discontinuing supply of said nitrogen-containing precursor gas, depositing a second portion of said single-layer, low-k barrier layer above said first portion of said single-layer, low-k barrier layer, said second portion having a second concentration of nitrogen, wherein said second concentration of nitrogen is less than said first concentration of nitrogen; and
depositing a dielectric layer above said second portion of said single-layer, low-k barrier layer.
23. The method of claim 22 , wherein said first and second portions of said single-layer, low-k barrier layer are comprised of silicon carbide.
24. The method of claim 22 , wherein said method is preformed in a single process chamber without breaking a vacuum established in said process chamber.
25. A method of forming a single-layer barrier layer comprised of first and second portions of silicon carbide over a metal region in a metallization structure, the method comprising:
depositing a first portion of silicon carbide on said metal region while supplying a nitrogen-containing precursor gas, said first portion of silicon carbide having a first concentration of nitrogen;
discontinuing supply of said nitrogen-containing precursor gas;
after discontinuing supply of said nitrogen-containing precursor gas, depositing a second portion of silicon carbide on said first portion of silicon carbide, said second portion of silicon carbide having a second concentration of nitrogen, wherein said second concentration of nitrogen is less than said first concentration of nitrogen; and
depositing a dielectric layer on said second portion of silicon carbide.
26. The method of claim 25 , wherein said nitrogen concentration of said first portion of silicon carbide is higher at a surface that interfaces with said metal region.
27. The method of claim 25 , wherein said method is performed in a single process chamber without breaking a vacuum established in said process chamber.
28. A method of forming a metallization layer, the method comprising:
depositing a single-layer, low-k barrier layer over a substrate having formed thereon a metal region;
during depositing said single-layer, low-k barrier layer, controlling incorporation of a diffusion barrier component into said low-k barrier layer such that a concentration of said diffusion barrier component is highest at a first surface of said single-layer, low-k barrier layer facing said metal region and is lowest at a second surface opposite to said first surface;
depositing a low-k dielectric layer over said single-layer, low-k barrier layer; and
patterning said low-k dielectric layer by anisotropic etching with a photoresist mask, wherein resist poisoning is reduced due to a reduced diffusion of said diffusion barrier component through the second surface, wherein patterning of said low-k dielectric layer includes forming a via extending through said low-k dielectric layer and forming a trench in an upper portion of said low-k dielectric layer by means of a resist mask.
29. The method of claim 28 , wherein controlling incorporation of said diffusion barrier component includes reducing an amount of a precursor gas containing said diffusion barrier component in a deposition ambient while continuing depositing of said single-layer, low-k barrier layer.
30. The method of claim 28 , wherein controlling incorporation of said diffusion barrier component includes depositing a first portion of said single layer, low-k barrier layer, discontinuing supply of a precursor gas containing said diffusion barrier component and depositing a second portion of said single-layer, low-k barrier layer.
31. The method of claim 28 , wherein said diffusion barrier component comprises nitrogen.
32. The method of claim 28 , further comprising forming a barrier metal layer on sidewalls of said via and said trench and filling said via and said trench with copper.
33. The method of claim 28 , wherein patterning of said low-k dielectric layer further includes forming an organic anti-reflective coating on said low-k dielectric layer and in said via prior to forming a resist mask for patterning said trench.
34. The method of claim 28 , wherein said method is performed in a single process chamber without breaking a vacuum established in said process chamber.
35. A method of forming a metallization layer, the method comprising:
depositing a single-layer, low-k barrier layer over a substrate having formed thereon a metal region;
during depositing said single-layer, low-k barrier layer, controlling incorporation of a diffusion barrier component into said single-layer, low-k barrier layer such that a concentration of said diffusion barrier component is highest at a first surface of said single-layer, low-k barrier layer facing said metal region and is lowest at a second surface opposite to said first surface, wherein controlling incorporation of said diffusion barrier component includes:
depositing a first portion of said single-layer, low-k barrier layer in the presence of a precursor gas containing said diffusion barrier component;
removing said precursor gas containing said diffusion barrier component from a deposition ambient; and
depositing a second portion of said single-layer, low-k barrier layer substantially without said precursor gas containing said diffusion barrier component; and
depositing a low-k dielectric layer over said single-layer, low-k barrier layer.
36. The method of claim 35 , further comprising patterning said low-k dielectric layer by anisotropic etching with a photoresist mask, wherein resist poisoning is reduced due to a reduced diffusion of said diffusion barrier component through the second surface.
37. The method of claim 36 , wherein patterning of said low-k dielectric layer includes forming a via extending through said low-k dielectric layer and forming a trench in an upper portion of said low-k dielectric layer by means of a resist mask.
38. The method of claim 37 , wherein patterning of said low-k dielectric layer further includes forming an organic anti-reflective coating on said low-k dielectric layer and in said via prior to forming a resist mask for patterning said trench.
39. The method of claim 35 , wherein said diffusion barrier component comprises nitrogen.
40. The method of claim 35 , wherein said single-layer, low-k barrier layer comprises silicon carbide.
41. The method of claim 35 , wherein said method is performed in a single process chamber without breaking a vacuum established in said process chamber.