IP Library › Granted Patent US 6,903,345
Granted Patent B2
US 6,903,345 · App. 09/819,907 · Granted Jun 7, 2005

Electron optical system, charged-particle beam exposure apparatus using the same, and device manufacturing method

Assignee: Canon Kabushiki Kaisha
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Quick Facts
Patent No.
US 6,903,345
App. No.
09/819,907
Granted
Jun 7, 2005
Kind
B2
Abstract

An electron optical system has a plurality of electron lenses. The system includes a first electron optical system array having electrodes with a plurality of rectangular apertures, and a second electron optical system array having electrodes with a plurality of rectangular apertures. The first and second electron optical system arrays are arranged along an optical axis in which a long side of each aperture of the first electron optical system array is perpendicular to a long side of each aperture of the second electron optical system array.

Claims (53)

1. An electron optical system having a plurality of electron lenses, said system comprising:

a first electron optical system array having electrodes with a plurality of rectangular apertures; and

a second electron optical system array having electrodes with a plurality of rectangular apertures, said first and second electron optical system arrays being arranged along an optical axis,

wherein a long side of each aperture of said first electron optical system array is perpendicular to a long side of each aperture of said second electron optical system array.

2. The system according to claim 1 , wherein each of said first and second electron optical system arrays comprises:

an upper electrode having a plurality of apertures;

a plurality of middle electrodes each having an aperture;

a lower electrode having a plurality of apertures; and

a shield interposed between said adjacent middle electrodes.

3. A charged-particle beam exposure apparatus comprising:

a charged-particle source for emitting a charged-particle beam;

a first electron optical system which has a plurality of electron lenses and forms a plurality of intermediate images of said charged-particle source by the plurality of electron lenses; and

a second electron optical system for projecting on a substrate the plurality of intermediate images formed by said first electron optical system,

said first electron optical system including:

a first electron optical system array having electrodes with a plurality of rectangular apertures; and

a second electron optical system array having electrodes with a plurality of rectangular apertures, said first and second electron optical system arrays being arranged along an optical axis,

wherein a long side of each aperture of said first electron optical system array is perpendicular to a long side of each aperture of said second electron optical system array.

4. An electron optical system having a plurality of electron lenses, the system comprising:

a plurality of electrodes which have rectangular apertures for transmitting a charged-particle beam and are arranged in one plane; and

a shield interposed between adjacent electrodes.

5. An electron optical system having a plurality of electron lenses, the system comprising:

an upper electrode having a plurality of rectangular apertures;

a plurality of middle electrodes each having a rectangular aperture;

a lower electrode having a plurality of rectangular apertures; and

a shield interposed between adjacent middle electrodes,

wherein said upper electrode, middle electrodes, and lower electrode are arranged along an optical axis.

6. The system according to claim 5 , wherein each of said middle electrodes has a plurality of rectangular apertures, and a long side of each aperture has an angle of not less than 0° to less than 180° in a direction along which the plurality of apertures are aligned.

7. An electron optical system for a charged-particle beam, the system comprising:

a substrate having a plurality of apertures for transmitting the charged-particle beam and a plurality of electrodes; and

a conductive shield interposed between adjacent electrodes.

8. The system according to claim 7 , wherein the conductive shield is arranged to prevent influence of a field generated by the electrode from transmitting between one side of the conductive shield and another side of the conductive shield.

9. The system according to claim 7 , wherein the conductive shield extends in a direction substantially parallel to a transmission direction of the charged-particle beam.

10. The system according to claim 7 , wherein the conductive shield is insulated from the adjacent electrodes.

11. The system according to claim 7 , wherein a space or an insulator is provided between the adjacent electrodes.

12. The system according to claim 7 , wherein the apertures are circular or rectangular.

13. An electron optical system including a plurality of electron lenses, the system comprising:

upper and lower substrates each having a plurality of apertures for transmitting a charged-particle beam;

a plurality of middle substrates each having at least one aperture for transmitting the charged-particle beam and at least one electrode, the plurality of middle substrates being arranged between the upper substrate and the lower substrate in a transmission direction of the charged-particle beam; and

a conductive shield interposed between adjacent middle substrates.

14. The system according to claim 13 , wherein the conductive shield is electrically coupled to the upper substrate and the lower substrate.

15. The system according to claim 13 , wherein a plurality of apertures are arrayed in the middle substrate.

16. An exposure apparatus which performs patterning using a charged-particle beam, the apparatus comprising:

a charged-particle beam source for emitting a charged-particle beam; and

an electron optical system including a substrate having a plurality of apertures for transmitting the charged-particle beam and a plurality of electrodes, and a conductive shield interposed between adjacent electrodes.

17. A device manufacturing method comprising the steps of:

performing a patterning process on a sample using an exposure apparatus defined in claim 16 ; and

developing the sample subjected to the patterning process.

18. An exposure apparatus which performs patterning using a charged-particle beam, the apparatus comprising:

a charged-particle beam source for emitting a charged-particle beam; and

an electron optical system including upper and lower substrates each having a plurality of apertures for transmitting the charged-particle beam, a plurality of middle substrates each having at least one aperture for transmitting the charged-particle beam and at least one electrode and arranged between the upper substrate and the lower substrate in a transmission direction of the charged-particle beam, and a conductive shield interposed between adjacent middle substrates.

19. A device manufacturing method comprising the steps of:

performing a patterning process on a sample using an exposure apparatus defined in claim 18 ; and

developing the sample subjected to the patterning process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2001
From: ONO, HARUHITO; YAGI, TAKAYUKI
To: CANON KABUSHIKI KAISHA
Reel/Frame 012024/0955 →
Priority Claims (1)
JP 2000-097125 · Mar 31, 2000 · national
Continuity (1)
Related Publication 20020000766A1 · Jan 3, 2002